LB120A ETC | Alldatasheet
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Technical content
DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Pinning 1 = Emitter 2 = Collector 3 = Base
Description
Designed for use in high-voltage switching applications. Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 600 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 Collector Cutoff Current ICBO - - 10 µA VCB=550V, IE=0 ICEO - - 10 µA VCE=400V, IB=0 Emitter Cutoff Current IEBO - - 10 µA VEB=6V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat)1 - - 0.4 V IC=50mA, IB=10mA VCE(sat)2 - - 0.75 V IC=100mA, IB=20mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 1 V IC=50mA, IB=10mA DC Current Gain(1) hFE1 8 - - - IC=10mA, VCE=10V hFE2 10 - 36 - IC=50mA, VCE=10V
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Dimensions in inches and (millimeters) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 100 mA Collector Current (pulse) IC 200 mA Base Current (DC) IB 20 mA Base Current (pulse) IB 40 mA Total Power Dissipation PD 0.8 W Total Power Dissipation(TC=25oC) PD 7 W Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC)