TISP61060D POINN | Alldatasheet
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TISP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS PRODUCT INFORMATION SEPTEMBER 1995 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. PROGRAMMABLE SLIC OVERVOLTAGE PROTECTIO N
- Dual Voltage-Programmable Protectors - Third Generation Design using Vertical Power Technology - Wide -5 V to -85 V Programming Range - High 150 mA min. Holding Current
- Reduced VBA T Supply Current - Triggering Current is Typically 50x Lower - Negative Value Power Induction Current Removes Need for Extra Protection Diode
- Rated for LSSGR & FCC Surges
- Surface Mount and Through-Hole Options - TISP61060P for Plastic DIP - TISP61060D for Small-Outline - TISP61060DR for Taped and Reeled Small-Outline
- Functional Replacements for
description
The TISP61060 is a dual forward-conducting buffered p-gate overvoltage protector. It is designed to protect monolithic SLICs (Subscriber Line Interface Circuits), against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The TISP61060 limits voltages that exceed the SLIC supply rail voltage. STANDAR D WAVE SHAP E ITS P A LSSG R 10/1000 µs 30 FCC Part 68 10/160 µs 45 LSSG R 2/10 µs 50 PART NUMBER S FUNCTIONAL REPLACEMEN T TCM1030P, TCM1060P, LB1201AB TISP61060P TCM1030D, TCM1060D, LB1201A S TISP61060D TCM1030DR, TCM1060D R TISP61060D R The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -10 V to -70 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply voltage, the overvoltage stress on the SLIC is minimised. (see Applications Information). Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding current of the crowbar prevents d.c. latchup. device symbol Terminals K1, K2 and A correspond to the alternative line designators of T, R and G or A, B and C. The negative protection voltage is controlled by the voltage, V GG, applied to the G terminal. SD6XAEA K1 G K2 MD6XAO '61060D PACKAGE (TOP VIEW) NC - No internal connection Terminal typical application names shown in parenthesis 4 5 8 K1 A A G NC (Tip) (Ground) (Ground) (Ring) (V S ) (Tip) (Ring) MD6XAP '61060P PACKAGE (TOP VIEW) NC - No internal connection Terminal typical application names shown in parenthesis 4 5 G NC A A (Tip) (Ground) (Ground) (Ring) (V S ) (Tip) (Ring)
TISP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS SEPTEMBER 1995 - REVISED SEPTEMBER 199 7 PRODUCT INFORMATION These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction. NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C ≤ TJ ≤ 85°C. The surge may be repeated after the device returns to its initial conditions. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature. absolute maximum ratings RATIN G SYMBO L VALU E UNIT Repetitive peak off-state voltage, IG = 0, -40°C ≤ TJ ≤ 85°C VDR M -100 V Repetitive peak gate-cathode voltage, VKA = 0, -40°C ≤ TJ ≤ 85°C VGKR M -85 V Non-repetitive peak on-state pulse current(see Notes 1 and 2) ITS P A 10/1000 µs 30 10/160 µs 45 2/10 µs 50 Non-repetitive peak on-state current (see Notes 1 and 2) ITS M Arm s 60 Hz sine-wave, 25 m s 6
60 Hz sine-wave, 2 s 1
Continuous on-state current (see Note 2) ITM 0.3 A Continuous forward current (see Note 2) IFM 0.3 A Operating free-air temperature range TA -40 to +85 °C Storage temperature range Tstg -40 to +150 °C Lead temperature 1,6 mm (1/16 inch) from case for 10 s TL 260 °C recommended operating conditions MIN TY P MA X UNIT C G Gate decoupling capacitor 100 nF electrical characteristics, -40°C ≤ TJ ≤ 85°C (unless otherwise noted) PARAMETE R TEST CONDITION S MIN TY P MA X UNIT ID Off-state current VD = -85 V, VG K = 0 V TJ = 25°C 5 µA TJ = 85°C 50 µA V(BO ) Breakover voltage dv/dt= -250 V/ms, Source Resistance = 300 Ω, VG G = -50 V dv/dt= -250 V/ms, Source Resistance = 300 Ω, VG G = -65 V IT = 12.5 A, 10/1000 µs, Source Resistance = 80 Ω, VG G = -50 V -53 -68 -55 V I S Switching current dv/dt= -250 V/ms, Source Resistance = 300 Ω, VG G = -50 V -100 m A VT On-state voltage IT = 1 A IT = 10 A IT = 16 A IT = 30 A V V F Forward voltage IF = 1 A IF = 10 A IF = 16 A IF = 30 A V I H Holding current IT = -1 A, di/dt = +1A/ms, VG G = -50 V -150 m A
NOTES: 3. Linear rate of rise, maximum voltage limited to 80% VG G .
- These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge. Figure 1. VOLTAGE-CURRENT CHARACTERISTI C
TISP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS SEPTEMBER 1995 - REVISED SEPTEMBER 199 7 PRODUCT INFORMATION DEVICE PARAMETER S general Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics. This resulted in the invention of new terms based on the application usage and device characteristic. Initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and stabilised. Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and their alternatives, this section has a list of alternative terms and the parameter definitions used for this data sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure, rather than its application usage as a single device may have many applications each using a different terminology for circuit connection. alternative symbol cross-reference guide This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in some cases the alternative symbols have no substance in international standards and are not fully defined by the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this guide. CROSS-REFERENCE FOR TISP61060 AND TCM1030/6 0 TISP61060 PARAMETE R DATA SHEET SYMBO L ALTERNATIVE SYMBO L ALTERNATIVE PARAMETE R RATINGS & CHARACTERISTIC S TCM1060, TCM103 0 Non-repetitive peak on-state pulse current ITS P - Non-repetitive peak surge current Non-repetitive peak on-state current ITS M - Non-repetitive peak surge current,10 m s Non-repetitive peak on-state current ITS M - Continuous 60-Hz sinewave, 2 s Forward voltage VF VC F Forward clamping voltage Forward current IF IFM Peak forward current On-state voltage VT VC Reverse clamping voltage On-state current IT ITM Peak reverse current Switching current IS Itrip Trip current Breakover voltage V(BO ) Vtrip Trip voltage Gate reverse current (with A and K terminals connected) IGA S ID Stand-by current, TIP & RING at GND Off-state current ID ID Stand-by current, TIP & RING at VS Off-state voltage VD VS Supply voltage Gate-cathode breakover voltage VGK(BO ) VO S Transient overshoot voltage Gate voltage, (VG G is gate supply voltage referenced to the A terminal) VG VS Supply voltage Off-state capacitance C O C off Off-state capacitance TERMINAL S TCM1060, TCM103 0 Cathode 1 K1 Tip Tip Cathode 2 K2 Ring Ring Anod e A GN D Ground Gate G VS Supply voltage
SEPTEMBER 1995 - REVISED SEPTEMBER 1997 TISP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS PRODUCT INFORMATION APPLICATIONS INFORMATIO N
electrical characteristics
The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction temperature, TJ. Hence a characteristic value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimise the temperature rise caused by testing. gated protector evolution and characteristics This section covers three topics. Firstly, it is explained why gated protectors are needed. Second, the performance of the original IC (integrated circuit) based version is described. Third, the performance improvements given by the TISP61060 are detailed. purpose of gated protectors Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. As the SLIC was usually powered from a fixed voltage negative supply rail, the limiting voltage of the protector could also be a fixed value. The TISP1072F3 is a typical example of a fixed voltage SLIC protector. SLICs have become more sophisticated. To minimise power consumption, some designs automatically adjust the supply voltage, V BAT, to a value that is just sufficient to drive the required line current. For short lines the supply voltage would be set low, but for long lines, a higher supply voltage would be generated to drive sufficient line current. The optimum protection for this type of SLIC would be given by a protection voltage which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the SLIC supply, Figure 2. This gated (programmable) protection arrangement minimises the voltage stress on the SLIC, no matter what value of supply voltage. CROSS-REFERENCE FOR TISP61060 AND LB1201A B TISP61060 PARAMETE R DATA SHEET SYMBO L ALTERNATIVE SYMBO L ALTERNATIVE PARAMETE R RATINGS & CHARACTERISTIC S LB1201A B Non-repetitive peak on-state pulse current ITS P IP Pulse current Non-repetitive peak on-state current ITS M IP RMS pulse current, 60 Hz On-state voltage VT VO N On-state voltage Switching current IS It Trip current Breakover voltage V(BO ) V T Trip voltage Maximum continuous on-state current ITM IC On-state current Maximum continuous forward current IFM IC On-state current Gate voltage, (VG G is gate supply voltage referenced to the A terminal) VG V S Supply voltage Off-state capacitance C O C OF F Off-state capacitance TERMINAL S LB1201A B Cathode 1 K1 Tip Tip Cathode 2 K2 Ring Ring Anod e A GN D Ground Gate G V S Supply voltage
TISP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS SEPTEMBER 1995 - REVISED SEPTEMBER 199 7 PRODUCT INFORMATION D00 8 plastic small-outline packag e This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DAT A 5,21 (0.205) 4,60 (0.181) NOTES: A. Leads are within 0,25 (0.010) radius of true position at maximum material condition. B. Body dimensions do not include mold flash or protrusion. C. Mold flash or protrusion shall not exceed 0,15 (0.006). D. Lead tips to be planar within ±0,051 (0.002). 1,75 (0.069) 1,35 (0.053) 6,20 (0.244) 5,80 (0.228) 5,00 (0.197) 4,80 (0.189) D008 8 7 6 5 4321 4,00 (0.157) 3,81 (0.150) 7° NOM
3 Places
7° NOM
4 Places
0,51 (0.020) 0,36 (0.014)
8 Places
1,27 (0.050) (see Note A)
6 Places
1,12 (0.044) 0,51 (0.020) 4° ± 4° 0,79 (0.031) 0,28 (0.011) 0,203 (0.008) 0,102 (0.004) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES Designation per JEDEC Std 30: PDSO-G8 0,50 (0.020) 0,25 (0.010)x 45°NOM 0,229 (0.0090) 0,190 (0.0075) MDXXAA
SEPTEMBER 1995 - REVISED SEPTEMBER 1997 TISP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS PRODUCT INFORMATION P00 8 plastic dual-in-line packag e This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions The package is intended for insertion in mounting-hole rows on 7,62 (0.300) centers. Once the leads are compressed and inserted, sufficient tension is provided to secure the package in the board during soldering. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DAT A 1 2 3 4 8 7 6 5 10,2 (0.400) MAX Index Dot 1,78 (0.070) MAX 5,08 (0.200) MAX 0,51 (0.020) MIN 2,54 (0.100) T.P. (see Note A) 0,533 (0.021) 0,381 (0.015) 3,17 (0.125) MIN Seating Plane 0,36 (0.014) 0,20 (0.008) 105° 90° 6,60 (0.260) 6,10 (0.240) 7,87 (0.310) 7,37 (0.290) T.P. CL CL ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES P008 Designation per JEDEC Std 30: PDIP-T8 NOTE A: Each pin centerline is located within 0,25 (0.010) of its true longitudinal position MDXXABA
TISP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS SEPTEMBER 1995 - REVISED SEPTEMBER 199 7 PRODUCT INFORMATION IMPORTANT NOTIC E Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS . Copyright © 1997, Power Innovations Limited