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Features
Linear current output Low gain mode function [low gain : -35dB] Typical Applications Mobile phones and tablets Digital still cameras Security camera SPECIFICATION ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Symbol Conditions Ratings Unit Maximum supply voltage VCC 6V Operating temperature Topr 30 to +85 C Storage temperature Tstg 40 to +100 C 1. Stresses exceeding those listed in the Absolute Maximum Rating table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com ODCSP4 1.01 mm x 1.01 mm
ORDERING INFORMATION
Ordering Code: LA0151CS-TLM-E Package ODCSP4 (Pb-Free / Halogen Free) Shipping (Qty / packing) 5000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/ BRD8011-D.PDF RECOMMENED OPERATING CONDITIONS AND OPERATING VOLTAGE RANGE at Ta = 25C (Note 2) 2. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Parameter Symbol Conditions Ratings Unit min typ max Recommended supply voltage VCC 2.2 3.3 5.5 V SW pin low voltage Vl Normal gain mode 0 0.4 V SW pin high voltage Vh Low gain mode 2.1 V
www.onsemi.com Ipd LA0151CS VCC OUT A A Light source ELECTRICAL AND OPTICAL CHARACTERISTICS at Ta 25C, VCC = 3.3V (Note 3) Parameter Symbol Conditions Ratings Unit min typ max Current dissipation (1) (Note 5, 7) ICC Ev = 1000 lx, RL = 5k, N mode 90 150 210 A Current dissipation (2) (Note 5, 7) ICC Ev = 1000 lx, RL = 5k, L mode 42 70 98 A Output current (1) (Note 5, 7) IO1 Ev = 100 lx, N mode 6 8 10 A Output current (2) (Note 5, 7) IO2 Ev = 1000 lx, N mode 60 80 100 A Output current (3) (Note 5, 7) IO3 Ev = 100 lx, L mode 0.12 0.16 0.2 A Output current (4) (Note 5, 7) IO4 Ev = 1000 lx, L mode 1.2 1.6 2.0 A Dark current Ileak Ev = 0 lx, N mode, L mode 0.1 A Temperature coefficient (Note 6) Itc Ev = 100 lx, N mode, L mode, Rise time (1) (Note 8) Tr1 Ev = 1000 lx, RL = 5k, N mode 15 40 s Rise time (2) (Note 8) Tr2 Ev = 1000 lx, RL = 500k, L mode 20 50 s Fall time (1) (Note 8) Tf1 Ev = 1000 lx, RL = 5k, N mode 150 500 s Fall time (2) (Note 8) Tf2 Ev = 1000 lx, RL = 500k, L mode 150 500 s Peak sensitivity wave length (Note 6) p 550 nm Saturation output voltage (Note 9) VO Ev = 1000 lx, RL = 150k, N mode 3.0 3.2 V 3. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. N mode and L mode stand for the normal gain mode and the low gain mode, respectively. 5. Measured with the standard light source A. White LED is used instead in the mass production line. 6. Design guaranteed item 7. Test circuit for measuring current dissipation and output current 8. Measuring method of rise time (Tr) and fall time (Tf) 9. Reference value : min = 2.6V and typ = 2.8V when VCC = 2.9V Ipd VOUT 90% 10% TfTr GND Ipd LA0151CS VCC OUT Pulse drive White LED
www.onsemi.com PAD LAYOUT Ball pitch : 0.5mm, Ball size : 0.18mm PAD LAYOUT (Photos) * The photo diode is located in pin 3. Be careful not to mistake the pin 1 mark for the photo diode. INTRNAL BLOCK DIAGRAM Pin No. Pin Name Function
1 V CC Power supply
2 SW Switch
3 GND Ground
4 OUT Output
<Bottom View><Top View> Top View Bottom View 1,VCC 2,SW 3,Gnd 4,Out Photo diode. Only this part looks dark on the product. Pin 1 mark It is located at the center of the bottom of the pakage. PD VCC OUT SW GND Current amplifier
www.onsemi.com CHIP PATTERN AND PHOTO-RECEIVING PATTERN DIAGRAMS 1010μm 249.5μm 223μm 80.5μm 69μm 1010μm 162μm 80.5μm 105μm * Pin 1 is on the upper left. LA0151CS chip pattern diagram (top view) LA0151CS photo-receiving pattern enlarged diagram (effective area) 105μm 15μm 17μm 10μm 249.5μm
www.onsemi.com 0.001 0.01 0.1 100 1000 100 1000 1 100 102 3 57 2 3 57 2 3 57 2 3 57 1k 100 1k23 5 7 23 5 7 23 5 7 23 5 710k 0.001 0.001 10 1 1 23 57 23 57 23 57 23 57 23 5710 100 1k 10k 100k 200 400 600 800 100 0 Illuminance -- lx Output current, IO -- μA 0.2 0.4 0.6 0.8 1.2 1.4 0.2 0.4 0.6 0.8 1.2 1.4 2345 345 6 Supply voltage, VCC -- -- V Relative output current ratio, RIO -- ratio RIO -- Ta 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.8 0.2 0.4 0.6 1.4 1.2 --60 --40 --20 0 20 40 60 80 100 0 20 40 60 80 100 120 Ambient temperature, Ta -- °C Relative output current ratio, RIO -- ratio ID -- Ta RS -- λ 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 --60 --40 --20 120 Ambient temperature, Ta -- °C Dark current, ID -- μA Wavelength, λ -- nm Relative sensitivity, RS -- ratio Supply voltage, VCC -- V Relative current drain ratio, RICC -- ratio 11 0 1 0 k Illuminance -- lx Current drain, ICC -- μA IO -- Illuminance Illuminance -- lx Output voltage, VO -- V VO -- Illuminance ICC -- Illuminance RIO -- VCC RICC -- VCC N gain N gain L gain L gain N gain N gain N gainL gain N gain L gain N gain L gain LA0151 ES2 CSP Human eye @1000lx VCC = 3.3V RL = 15kΩ @1000lx
www.onsemi.com 0.2 0.4 0.6 0.8 0.2 0.4 0.6 0.8 1.2 1.2 --90 --60 --30 30 0 60 0 30 60 90 Angle, deg -- ° Photopic luminous efficiency, PLE -- ratio --90 --60 --30 90 Angle, deg -- ° Photopic luminous efficiency, PLE -- ratio PLE -- deg N gain PLE -- deg L gain @1000lx @1000lx
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