L9380 STMICROELECTRONICS | Alldatasheet
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TRIPLE HIGH-SIDE MOSFET DRIVER OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION (REFER- RING TO THE APPLICATION CIRCUIT DIA- GRAM) PROGRAMMABLE OVERLOAD PROTEC- TION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION FOR CHANNEL 1 AND 2 CONSTANT GATE CHARGE/DISCHARGE CURRENT
DESCRIPTION
The L9380 device is a controller for three external N-channel power MOS transistors in "High-Side Switch" configuration. It is intended for relays re- placement in automotive electric control units. April 1998 VS N.C. PR IN2 IN3 IN1 EN G2 N.C. N.C. CP1 GND G3 D98AT391 PIN CONNECTION (Top view) SO20 ORDERING NUMBER: L9380
REG. D98AT390 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VS DC Supply Voltage -0.3 to +27 V VS Supply Voltage pulse (t ≤ 400ms) 45 V Δ VS/dt Supply Voltage slope -10 to +10 V/ µs VIN,EN Input / Enable Voltage -0.3 to +7 V VT Timer Voltage -0.3 to 27 V VD, G, S Drain, gate, source voltage -15 to +27 V VD, G, S Drain, gate, source voltage pulse (t ≤ 400ms) 45 V ID, G, S Drain, gate, source current (t ≤ 2ms) 0 to +4 mA Tj Operating Junction Temperature -40 to 150 °C Tstg Storage Temperature -65 to 150 °C Note: ESD for all pins, except the timer pins, are according to MIL 883C, tested at 2KV, corresponds to a maximum energy dissipation of 0.2mJ. The timer pins are tested with 800V L9380
Symbol Parameter Value Unit R th j-amb Thermal Resistance Junction to Ambient 100 °C/W LIFETIME Symbol Parameter Condition Value Unit tB Useful life time V S = 0V 20 years tb Operating life time V S = 7 to 18.5V 5000 hours PIN FUNCTIONS N. Name Function
1 T1 Timer capacitor; the capacitor defines the time for the channel 1 shut down, after overload of
the external MOS transistor has been detected. 2V S Supply Voltage.
4 T2 Timer capacitor; the capacitor defines the time for the channel 2 shut down, after overload of
the external MOS transistor has been detected.
5 PR Programming resistor for overload detetcion threshold; the resistor from this pin to ground
defines the drain pin current and the charging of the timer capacitor. 6 IN3 Input 3; equal to IN1. 7 IN2 Input 2; equal to IN1. 8 IN1 Input 1; logic signal applied to this pin controls the driver 1; this pin features a current source to assure defined high status when the pin is open.
9 EN Enable logic signal high on this pin enables all channels
10 GND Ground
11 G3 Gate 3 driver output; current source from CP or ground
12 G2 Gate 2 driver output; current source from CP or ground
14 S2 Source 2 sense input; monitors the source voltage. 15 S1 Source 1 sense input; monitors the source voltage.
16 G1 Gate 1 driver output; current source from CP or ground
17 D2 Drain 2 sense input; a programmable input bias current defines the drop across the external
D1 ; this drop fixes the overload threshold of the external MOS.
19 D1 Drain 1 sense input; a programmable input bias current defines the drop across the external
resistor RD1 ; this drop fixes the overload threshold of the external MOS.
20 CP Charge pump capacitor; a alternating current source at this pin charges the connected
capacitor CCP to a voltage 10V higher than VS; the charge stored in this capacitor is thanused to charge all the three gates of the power MOS transistors. 3, 13, 18 NC Not connected L9380
The Triple High-Side Power-MOS Driver features all necessary control and protection functions to switch on three Power-MOS transistors operating as High-Side switches in automotive electronic control units. The key application field is relays re- placement in systems where high current loads, usually motors with nominal currents of about 40A connected to ground, has to be switched. A high signal at the EN pin enables all three channels. With enable low gates are clamped to ground. In this condition the gate sink current is higher than the specified 3mA. An enable low sig- nal makes also a reset of the timer. A low signal at the inputs switch on the gates of the external MOS. A short circuit at the input leads to permanent activation of the concerned channel. In this case the device can be disabled with the enable pin. The charge pump loading is not influenced due to the enable input. An external N-channel MOS driver in high side configuration needs a gate driving voltage higher than V S. It is generated by means of a charge pump with integrated charge transfer capacitors and one external charge storage capacitor CCP . The charge pump is dimensioned to load a ca- ELECTRICAL CHARACTERISTICS (7V ≤ VS ≤ 18.5V; -40°C ≤ TJ ≤ 150°C, unless otherwise specified.) Symbol Parameter Test Condition Min. Typ. Max. Unit SUPPLY IVS Static Operating Supply Current VS = 14V 2.5 mA CHARGE PUMP VCP Charge Pump Voltage Above VS 81 7 V tCP Charging Time V CP = VS + 8V CCP = 100pF 200 µs VSCP off Overvoltage Shut down 20 30 V VSCP hys Overvoltage Shut down Hysteresis 1) 50 200 1000 mV fCP Charge Pump frequency 1) 100 250 400 KHz GATE DRIVERS IGSo Gate Source Current V G = VS -5 -3 -1 mA IGSi Gate Sink Current V G ≥ 0.8V 1 3 5 mA DRAIN - SOURCE SENSING VPR Bias Current Programming voltage 10µA ≤ IPR ≤ 100µA; VD ≥ 4V 1.8 2 2.2 V ID Leak Drain pin leakage current V S = 0V; VD =14V 0 5 µA ID Drain pin bias current V S ≥ VD + 1V; VD ≥ 5V 0.9 I PR 1.1 IPR ISmax Source pin input current V S ≥ VD + 1V; VD ≥ 7V 10 60 µA VHYST Comparator Hysteresis 20 mV TIMER VTHi Timer threshold high 4 4.4 4.8 V VTLo Timer threshold low 0.3 0.4 0.5 V IT Timer Current IN = 5V; V T = 2V IN = 0V; VS < VD ; VD ≥ 5V; VT = 2V
0.4 IPR
-0.6 IPR
0.6 IPR
-0.4 IPR INPUTS VLOW Input Enable low voltage -0.3 1 V VHIGH Input Enable high voltage 3 7 V VINhys Input Enable Hysteresis(1) 50 200 500 mV IIN Input source current V IN ≤ 3V -30 -5 µA IEN Enable sink current V EN ≥ 1V 5 30 µA td Transfer time IN/ENABLE V S = 14V VG = VS; OPEN GATE 2.5 µs NOTE: Not measured guaranteed by design Function is given for supply voltage down to 5.5V. Function means: The channels are controlled from the inputs, some other parameters may exceed the limit. In this case the programming voltage and timer threshold will be lower. This leads to a lower protection threshold and time. L9380
the drain pin with a resistor to Vbat. and the meaning of VDSmin and Toff (see figure 4). case the overload is stored in the timer capacitor. system the external resistors are necessary. can influence the other channels. 20V) the charge pump oscillation is stopped. driver output G3 is referred to the D1 in this case. Figure 6. Comparator hysteresis.
Figure 7. Application Circuit. mum current during transients at each pin.
Figure 8. Charge Loading Time as function of VS Figure 9. Charge Pump Current as function of Figure 10. Ground Loss Protection Gate Dis-
01234 V I(V)
Figure 11. Input Current as function of the Input Figure 12. Overvoltage Shutdown of the Charge
Figure 13. Measured Circuit. The EMS of the device was verified in the below described setup.
Figure 14: PCB Board Electromagnetic Emission Classification (EME) Electromagnetic Emission classes presented below are typical data found on bench test. For detailes test description please refer to "Electromagnetic Emission (EME) Measurement of Integrated Circuits, DC to 1GHz" of VDE/ZVEI work group 767.13 and VDE/ZVEI work group 767.14 or IEC project number 47A 1967Ed. This data is targeted to board designers to allow an estimation of emission filtering effort required in application. All measurements are done with the EMS-board (See pages 9, 10) Pin EME class Remark VCP G - w Electromagnetic Emission and Susceptivity is not tested in production. L9380
SO20 PACKAGE MECHANICAL DATA DIM. mm inch A 2.35 2.65 0.093 0.104 A1 0.1 0.3 0.004 0.012 B 0.33 0.51 0.013 0.020 C 0.23 0.32 0.009 0.013 D 12.6 13 0.496 0.512 E 7.4 7.6 0.291 0.299 e 1.27 0.050 H 10 10.65 0.394 0.419 h 0.25 0.75 0.010 0.030 L 0.4 1.27 0.016 0.050 K 0 (min.)8 (max.) 11 0 1120 A eB D E L K H A1 C SO20MEC h x 45˚ L9380
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS- THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1998 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. L9380