L9349 STMICROELECTRONICS | Alldatasheet
Document overview
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Technical content
■ Quad power low side driver with 2 x 5A and 2 x 3A output current capability ■ Low RDSON typically 200mΩ and 300mΩ @ T j = 25°C ■ Internal output clamping structures with VFB = 50V for fast inductive load current recirculation ■ Limited output voltage slew rate for low EMI ■ Protected µP compatible enable and input ■ Wide operating supply voltage range 4.5V to 32V ■ Real time diagnostic functions: – Output shorted to GND – Output shorted to VSS – Open load detection in ON and OFF condition – Load bypass detection – Overtemperature detection ■ Device protection functions: – Overload disable – Selective thermal shutdown ■ Signal- and Power-Ground-loss shutdown
DESCRIPTION
The L9349 is a monolithic integrated quad low side driver realized in an advanced MultipowerBCD mixed technology. The device is intended to drive valves in automotive environment. The inputs are µP compatible. Particular care has been taken to protect the device against failures, to avoid electromagnetic interferences and to offer ex- tensive real time diagnostic. PowerSO20 BARE DIE ORDERING NUMBERS: L9349 L9349DIE1 QUAD INTELLIGENT POWER LOW SIDE SWITCH BLOCK DIAGRAM Diagnostic Control R QS Delay Time Overload Overtemp Output Control Openload 52V R IO Channel 4 Channel 1 Channel 2 Channel 3 OUT3 OUT2 OUT4 VS OUT1IN1 EN IN4 IN2 IN3 GND00AT0025
N° Pin Function
1 PGND Power Ground
2 Out1 Output 1 (5A)
3 D1 Diagnostic 1
4 IN4 Input 4
5 VS Supply Voltage
6 NC Not Connected
7 IN3 Input 3
8 D2 Diagnostic 2
9 Out2 Output 2 (5A)
10 PGND Power Ground
11 PGND Power Ground
12 Out3 Output 3 (3A)
13 D3 Diagnostic 3
14 IN2 Input 2
15 GND Signal Ground
16 EN Common Enable
17 IN1 Input 1
18 D4 Diagnostic 4
19 Out4 Output 4 (3A)
20 PGND Power Ground
20 PGND
19 OUT4
to pins 1, 10, 11, 20
Electrical Characteristcs (Operating Range) The electrical characteristics are valid within the below defined operating range, unless otherwise specified. Symbol Parameter Value Unit R Th j-case Thermal resistance junction to case 3 °C/W Symbol Parameter Conditions Value Unit VS DC Supply Voltage -0.3 to 32 V VSP Supply Voltage Pulse (duration <200ms) -0.3 to 45 V dVS/dt Supply Voltage Slope 10 V/µs VIN, EN Input Voltage I10mA -1.5 to 6 V VD Diagnostic DC Output Voltage I 50mA -0.3 to 16 V VODC DC Output Voltage -0.3 to 45 V IO1, 2 DC Output Current Out 1, 2 5 A IO3, 4 DC Output Current Out 3, 4 3 A IOR1, 2 Reverse Output Current -5 A IOR3, 4 Reverse Output Current -3 A EO1, 2 Switch-off Energy for Inductive Loads tEO = 250µs,1) 1) t EO is the clamping time (see Figure 1) 50 mJ EO3, 4 T = 5ms 30 mJ ΔVGND GND Potential Difference T j = -40 to 150°C ±0.3 V TjEO Junction T emperature During Switch-off Σt ≤ 30 min 175 °C Σt ≤ 15 min 190 °C Tj Junction T emperature -40 to T jDIS °C Tstg Storage T emperature -55 to 150 °C TjDIS Thermal Disable Junction T emp. Threshold 180 to 210 °C ESD Electrostatical Discharging MIL883C +-2 kV ESD OUT1 - 4 vs. Common-GND (PGNDs + GND) +-4 kV Symbol Parameter Test Condition Min. Typ. Max. Unit VS Board Supply Voltage 4.5 12 32 V Tj1 Junction T emperature -40 150 °C Tj2 Junction T emperature Σt ≤ 15min 1) over life time 1) Parameters guaranteed by correlation
150 T jDIS °C
ELECTRICAL CHARACTERISTICS
(VS = 4.5 to 32V; -40°C ≤ Tj1 ≤ 150°C < Tj2 ≤ TjDIS, unless other-wise specified.) Symbol Parameter Test Conditions Values Tj1 Values Tj2 Unit Supply IVS OFF DC Supply Current Off EN = 1.0V 5 10 mA IVS ON DC Supply Current OnVS ≤ 14V; VIN, VEN = 2V 8m A Diagnostic Outputs D1 - D4 VDL Diagnostic Output Low Voltage ID ≤ 3mA 0.65 1.0 1.5 V IDLE Diagnostic Output Leakage Current VD = 14V 1) 0.1 2 20 µA Outputs Out 1 - Out 4 R DSON 1, 2 Output On Resistance Tj = 25°C Tj = 150°C VS > 9.5V IO1,2 = 2A 200 300 500 m Ω R DSON 3, 4 Tj = 25°C Tj = 150°C VS > 9.5V IO3,4 = 1.3A 300 450 750 m Ω VZ Z-diode clamping voltage IOCL ≥ 200mA 45 60 V R O Output pull down resistor VS > 9.5V EN = 0V 10 40 50 kΩ VOUV 1-4 Open Load Voltage Threshold VIN = 1V 0.525 x VS 0.55 x VS 0.575 x VS V VOUV hys 1- Hysteresis 0.003 x VS V ΔVOUV 1-4, 2-3, 4-1, 3-2 Open Load Difference Voltage Threshold VIN1,4/2,3 = 1V VS ≤ 16V VOc Š 4.5V V OC = output voltage of other channel VOC - 1.0V V OC - 1.25V VOC - 1.5V V ΔVOUV hys 1-4, 2-3, 4-1, 3-2 Open Load Hysteresis 40 mV IOUC 1, 2, 3, Open Load Current Threshold VEN =VIN=2V; VS=6.5 - 16V 160 320 480 mA IOOC 1, 2 Over Load Current Threshold VS > 6.5V; VOUT = 32V 51 0 A IOOC 3, 4 36 A TSD Thermal Shut Down 180 195 210 °C TSD-hys Thermal Shut Down hysteresis 20 °C
IOUT-LE OUT leakage current VOUT = 20V VS = 0V 5 µA Inputs IN1-4, EN VIN,EN L Logic Input/Enable Low Voltage -0.3 1 V VIN,EN H Logic Input/Enable High Voltage IN, EN 2.0 6 V VEN,IN hys Logic Input Hysteresis 50 100 mV IIN Input Sink Current 2V < VIN, VEN < 6V 2) VIN, VEN < Vs 10 20 40 µA IEN Enable Sink Current 10 20 40 µA Timing tON Output Delay ON Time IO = 1A VS = 12V 3)) Fig. 2 42 5 µs tf,r Output fall and rise time IO = 1A VS = 12V Fig. 2 31 0 3 0 µs tOFF Output Delay OFF Time IO = 1A VS = 12V 3) Fig. 2 51 5 3 0 µs tDH-L, Diag Diag. Delay Output OFF Time 3) Fig. 2 86 5 9 0 µs tD IOU Diagnostic Open Load Delay Time 9V< VS <16V , Fig 3 8 50 µs tDOL Diagnostic Overload Delay Switch-OFF Time 9V< V S <16V , Fig 3 6 65 µs tfilt Filter time 4 24 µs PGND PGND loss,h Power GND loss threshold high PGND loss,lPower GND loss threshold low 1) The diagnostic output is short circuit protected up to VD = 16V 2) Open pins (EN, IN) are detected as low 3) V S = 9 to 16V ∧ IOUC ≤ IO ≤ IOOC ELECTRICAL CHARACTERISTICS (continued) (VS = 4.5 to 32V; -40°C ≤ Tj1 ≤ 150°C < Tj2 ≤ TjDIS, unless other-wise specified.) Symbol Parameter Test Conditions Values Tj1 Values Tj2 Unit
The L9349 is a quad low side driver for inductive loads like valves in automotive environment. The internal pull down current sources at the ENable and INput pins assure in case of open input conditions that the device is switched off. An output voltage slope limitation for du/dt is implemented to reduce the EMI. An integrated active flyback voltage limitation clamps the output voltage during the flyback phase to 50 V. Each driver is protected against short circuit at VOUT < 32V and thermal overload. In short circuit condition the output will be disabled after a short delay time tDOL . The thermal disable for TJ > 180°C of the output will be reset if the junction temperature decreases about 20°C below the disable threshold temperature. The overtemperature, overload and groundloss information is stored until IN is low. For the real time error diagnosis the voltage and the current of the outputs are compared with internal fixed val- ues V OUV for OFF and IOUC for ON conditions to recognize open load (RL ≥ 20KΩ , RL > 38Ω ) in OFF and ON conditions. Also the output voltages VO1 - 4 are compared to each other output in OFF condition with a fixed offset of ΔVOUV to recognize load bypasses. The ΔVOUV diagnoses is suppressed during the flyback phases of the compared output. The outputs 1 and 4 are compared for ΔVOUV and also outputs 2 and 3 are compared. The diagnostic output level in connection with different ENable and INput conditions allows to recognize differ- ent fail states, like overtemp, short to VS, short to GND, bypass to GND and disconnected load (see diagnostic table). The diagnostic output is protected against short circuit. Exceeding the over load current threshold IOOC , the out- put current will be limited internally during the diagnostic overload delay switch-off time tDOL . The device complies the ISO pulses imposed to the supply voltage of the valves without any failures of the func- tionality. Therefore some diagnostic functions are internal filtered. The following table shows the corresponding filter time for each detected signal. Conditions EN IN OUT DIAG. Normal Function L X off L HL o f f L HH o n H GND short V Otyp < 0.55VS L X off H Load bypass ΔVO1-4/2-3 ≥ 1.25V HL o f f H Open Load IO1,2,3,4typ < 320mA HH o nL Tjtyp ≥ 190°C Overtemperature XX o f f L Over Load I Omin 1,2 > 5A IOmin 3,4 > 3A HH o f fL SGND or PGND loss channel off X L off H SGND or PGND loss channel on H H off L
Figure 1. tEO Clamping Time
Figure 4. Block Diagram - Open Load Voltage Detection
e a2 A E PSO20MEC DETAIL A T D 11 0 1120 E1E2 h x 45 DETAIL Alead sluga3 S Gage Plane 0.35 L DETAIL B R DETAIL B (COPLANARITY) GC - C - SEATING PLANE b c NN H BOTTOM VIEW DIM. mm inch A 3.6 0.142 a1 0.1 0.3 0.004 0.012 a2 3.3 0.130 a3 0 0.1 0.000 0.004 b 0.4 0.53 0.016 0.021 c 0.23 0.32 0.009 0.013 D (1) 15.8 16 0.622 0.630 D1 9.4 9.8 0.370 0.386 E 13.9 14.5 0.547 0.570 e 1.27 0.050 e3 11.43 0.450 E1 (1) 10.9 11.1 0.429 0.437 E2 2.9 0.114 E3 5.8 6.2 0.228 0.244 G 0 0.1 0.000 0.004 H 15.5 15.9 0.610 0.626 h 1.1 0.043 L 0.8 1.1 0.031 0.043 N 8˚ (typ.) S 8˚ (max.) T 10 0.394 (1) “D and E1” do not include mold flash or protusions. - Mold flash or protusions shall not exceed 0.15mm (0.006”) - Critical dimensions: “E”, “G” and “a3”. PowerSO20 0056635 JEDEC MO-166 Weight: 1.9gr
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