L9222 STMICROELECTRONICS | Alldatasheet
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QUAD INVERTING TRANSISTOR SWITCH .OUTPUT VOLTAGE TO 50V .OUTPUT CURRENT TO 1.2A .VERY LOW SATURATION VOLTAGE .TTL COMPATIBLE INPUTS .INTEGRAL SUPPRESSION DIODE Powerdip (12+2+2) ORDERING NUMBER : L9222
DESCRIPTION
The L9222 monolithic quad transistor switch is de- signed forhigh current, high voltageswitching appli- cations. Each of the four switches is controlled by a logic in- put and all four are controlled by a common enable input. All inputs are TTL-compatible for direct con- nection to logic circuits. Each switch consists of an open-collector transistor plus a clamp diode for ap- plications with inductive loads. The emitters of the four switches are connected to- gether to GND. The switches of the same device may be paralled. The device is intended to drive coilssuchas relays, solenoids,unipolar steppermo- tors, LED etc. BLOCK DIAGRAM
Symbol Parameter Value Unit VOUT Output Voltage – 0.7 to 50 V VCC Logic Supply Voltage 7 V Vi Input Voltage – 0.7 to V CC + 0.3 V Tj,T ST Junction and Storage Temperature Range – 55 to 150 °C PIN CONNECTION (top view) TRUTH TABLE Enable Input Power Out H H L L H X ON OFF OFF For each input : H= High level L= Low level X = Don’t care THERMAL DATA Symbol Parameter Value Unit R th j-amb R th-J-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max °C/W °C/W L9222
ELECTRICAL CHARACTERISTICS (VCC = 5Vdc ± 5% V EN =5 V–4 0 ≤ Tj ≤ 125°C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sus) Output Sustaining Voltage V IN =2 VV EN = 2V, IOUT = 100mA 46 V ICEX Output Leakage Current V CE = 50V VIN = 2V, VEN = 0.8V 1m A VCE(sat) Collector Emitter Saturation VIN ≥ 0.8V IOUT = 0.1A IOUT = 0.3A IOUT = 0.6A; – 40 + 105°C 0.3 0.5 0.8 V V V VIL Input Low Voltage 0.8 V IIL Input Low Current V IN = 0.4V – 15 µA VIH Input High Voltage 2.0 V IIH Input High Current V IN ≥ 2.0V – 15 µA IS Logic Supply Current All Outputs ON I OUT = 06A 50 90 mA All Outputs OFF 10 20 mA IR Clamp Diode Leakage Current V R = 50V Diode Reverse Voltage 100 µA VF Clamp Diode Forward Voltage I F = 0.6A 1.8 V IF = 1.2A 2.0 V IOUT Output Current V IN = 0.4V, R = 10Ω ,V S = 13V 0.9 1.2 A TPHL Propagation Delay Time (high to low transition) Tj=2 5°C IL = 600mA 20 µs TPHL Propagation Delay Time (low to high transition) IL = 600mA Tj=2 5°C 20 µs VENL Low Enable Voltage 0.8 V IENL Low Enable Current V EN = 0.4V – 15 µA VENH High Enable Voltage 2.0 V IENH High Enable Voltage V EN ≥ 2.0V – 15 15 µA L9222
POWERDIP16 PACKAGE MECHANICAL DATA DIM. mm inch a1 0.51 0.020 B 0.85 1.40 0.033 0.055 b 0.50 0.020 b1 0.38 0.50 0.015 0.020 D 20.0 0.787 E 8.80 0.346 e 2.54 0.100 e3 17.78 0.700 F 7.10 0.280 I 5.10 0.201 L 3.30 0.130 Z 1.27 0.050 L9222
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica- tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre- viously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics . 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. L9222