L8B

IRGS8B60KPBF IRF | Alldatasheet

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Features

• Low VCE (on) Non Punch Through IGBT Technology.  10µs Short Circuit Capability.  Square RBSOA.  Positive VCE (on) Temperature Coefficient.  Lead-Free. Benefits  Benchmark Efficiency for Motor Control.  Rugged Transient Performance.  Low EMI.  Excellent Current Sharing in Parallel Operation. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF VCES = 600V IC = 20A, TC=100°C tsc>10µs, T J=150°C VCE(on) typ. = 1.8V E C G n-channel Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 28 IC @ TC = 100°C Continuous Collector Current 19 A ICM Pulse Collector Current (Ref.Fig.C.T.5) 56 ILM Clamped Inductive Load current /c99 56 VGE Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 167 W PD @ TC = 100°C Maximum Power Dissipation 83 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units RθJC Junction-to-Case- IGBT ––– ––– 0.90 RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W RθJA Junction-to-Ambient, typical socket mount /c100 ––– ––– 62 RθJA Junction-to-Ambient (PCB Mount, Steady State)/c101 ––– ––– 40 PD - 95645A D2Pak IRGS8B60K TO-220AB IRGB8B60KPbF TO-262 IRGSL8B60K

2 www.irf.com Notes /G129 to /G132 are on page 13. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0 . 5 7— V / ° C VGE = 0V, IC = 1mA (25°C-150°C) VCE(on) Collector-to-Emitter Voltage — 1.8 2.2 IC = 8.0A, VGE = 15V, TJ = 25°C 5,6,7 —2 . 2 2 . 5V IC = 8.0A, VGE = 15V, TJ = 150°C 8,9,10 —2 . 3 2 . 6 IC = 8.0A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 VCE = VGE, IC = 250µA 8,9,10, ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -9.5 — mV/°CVCE = VGE, IC = 1mA (25°C-125°C) 11 gfe Forward Transconductance — 3.7 — S VCE = 50V, IC = 8.0A, PW = 80µs ICES Zero Gate Voltage Collector Current — 1.0 150 VGE = 0V, VCE = 600V — 200 500 µA VGE = 0V, VCE = 600V, TJ = 150°C — 800 1320 VGE = 0V, VCE = 600V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge (turn-on) — 29 — IC = 8.0A 17 Qge Gate-to-Emitter Charge (turn-on) — 3.7 — nC VCC = 480V CT1 Qgc Gate-to-Collector Charge (turn-on) — 14 — VGE = 15V Eon Turn-On Switching Loss — 160 268 IC = 8.0A, VCC = 400V CT4 Eoff Turn-Off Switching Loss — 160 268 µJ VGE = 15V, RG = 50Ω, L = 1.1mH Etot Total Switching Loss — 320 433 TJ = 25°C /c102 td(on) Turn-On delay time — 23 27 IC = 8.0A, VCC = 400V tr Rise time — 22 26 ns VGE = 15V, RG = 50Ω, L = 1.1mH CT4 td(off) Turn-Off delay time — 140 150 TJ = 25°C tf Fall time — 32 42 Eon Turn-On Switching Loss — 220 330 IC = 8.0A, VCC = 400V CT4 Eoff Turn-Off Switching Loss — 270 381 µJ VGE = 15V, RG = 50Ω, L = 1.1mH 12,14 Etot Total Switching Loss — 490 608 TJ = 150°C /c102 WF1,WF2 td(on) Turn-On delay time — 22 27 IC = 8.0A, VCC = 400V 13,15 tr Rise time — 21 25 ns VGE = 15V, RG = 50Ω, L = 1.1mH CT4 td(off) Turn-Off delay time — 180 198 TJ = 150°C WF1 tf Fall time — 40 56 WF2 Cies Input Capacitance — 440 — VGE = 0V Coes Output Capacitance — 38 — pF VCC = 30V 16 Cres Reverse Transfer Capacitance — 16 — f = 1.0MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 34A, Vp = 600V 4 VCC=500V,VGE = +15V to 0V,RG = 50Ω CT2 TJ = 150°C, Vp = 600V, RG = 100Ω CT3 SCSOA Short Circuit Safe Operating Area 10 — — µs VCC=360V,VGE = +15V to 0V WF3

www.irf.com 3 Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 10 100 1000 VCE (V) 100 IC A) 1 10 100 1000 10000 VCE (V) 0.01 0.1 100 IC (A) 100 µs 10ms DC 1ms 0 20 40 60 80 100 120 140 160 180 TC (°C) IC (A) 0 20 40 60 80 100 120 140 160 180 TC (°C) 100 125 150 175 Ptot (W

4 www.irf.com Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 0123456 VCE (V) ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 0123456 VCE (V) ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs 0123456 VCE (V) ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

www.irf.com 5 Fig. 11 - Typ. Transfer Characteristics VCE = 360V; tp = 10µs Fig. 10 - Typical VCE vs. VGE TJ = 150°C 51 0 1 5 2 0 VGE (V) VCE (V) ICE = 4.0A ICE = 8.0A ICE = 16A Fig. 9 - Typical VCE vs. VGE TJ = 25°C 51 0 1 5 2 0 VGE (V) VCE (V) ICE = 4.0A ICE = 8.0A ICE = 16A Fig. 8 - Typical VCE vs. VGE TJ = -40°C 5 1 01 52 0 VGE (V) VCE (V) ICE = 4.0A ICE = 8.0A ICE = 16A 0 5 10 15 20 VGE (V) 100 ICE (A) TJ = 25°C TJ = 150°C TJ = 150°C TJ = 25°C

6 www.irf.com Fig. 15 - Typ. Switching Time vs. RG TJ = 150°C; L=1.1mH; VCE= 400V ICE= 8.0A; VGE= 15V 0 100 200 300 400 500 RG (Ω) 100 1000 10000 Swiching Tim e (ns) tR tdOFF tF tdON Fig. 14 - Typ. Energy Loss vs. R G TJ = 150°C; L=1.1mH; VCE= 400V ICE= 8.0A; VGE= 15V 0 100 200 300 400 500 RG (Ω) 100 200 300 400 500 600 700 Energy (µJ) EON EOFF Fig. 13 - Typ. Switching Time vs. I C TJ = 150°C; L=1.1mH; VCE= 400V RG= 50Ω; VGE= 15V 0 5 10 15 20 IC (A) 100 1000 Swiching Tim e (ns) tR tdOFF tF tdON Fig. 12 - Typ. Energy Loss vs. IC TJ = 150°C; L=1.1mH; VCE= 400V, RG= 50Ω; VGE= 15V 0 5 10 15 20 IC (A) 100 200 300 400 500 600 Energy (µJ) EOFF EON

www.irf.com 7 Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.491 0.000190 0.409 0.001153 τJ τJ τ τC Ci= i/Ri Ci= τi/Ri Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1 10 100 VCE (V) 100 1000 Capacitance (pF) Cies Coes Cres Fig. 17 - Typical Gate Charge vs. VGE ICE = 8.0A; L = 600µH 0 5 10 15 20 25 30 Q G, Total Gate Charge (nC) VGE (V) 300V 400V

8 www.irf.com VCC DUT L Fig.C.T.5 - Resistive Load Circuit L Rg VCC diode clamp / DUT DUT / DRIVER - 5V Rg VCCDUT R = VCC ICM L Rg

80 V DUT

www.irf.com 9 Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 -200 -100 100 200 300 400 500 600 0 0.2 0.4 0.6 0.8 1 Time (uS) Vce (V) Ice (A) tf E off Loss 90% Ice 5% Vce 5% Ice Vce Ic e -100 100 200 300 400 500 600 0.3 0.5 0.7 0.9 Time (uS) Vce (V) Ice (A) Eon Loss tr 90% Ice 10% Ice 5% Vce Vce Ice Fig. WF3- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3 100 150 200 250 300 350 400 Time (uS) Vce (V) Ice (A)

10 www.irf.com /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 EXA M PLE: I N THE A SSEM BLY LI N E " C " THIS IS AN IRF1010 LOT CODE 1789 AS S EMB LED ON WW 19, 1997 PA RT NUMBE R A SSEM BLY LOT C O DE DAT E CODE YEAR 7 = 1997 LINE C W EEK 19 LOG O REC TIFIER INTE RNAT IONAL Note: "P" in assembly line position indicates "Lead-Free" /G84/G79/G45/G50/G50/G48/G65/G66/G32 /G80/G97/G99/G107/G97/G103/G101/G32 /G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32 /G97/G114/G101/G32 /G115/G104/G111/G119/G110/G32 /G105/G110/G32 /G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32 /G40/G105/G110/G99/G104/G101/G115/G41

www.irf.com 11 /G68/G50/G80/G97/G107/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 /G68/G50/G80/G97/G107/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 Dimensions are shown in millimeters (inches) Note: "P" in as s embly line pos ition indicates "Lead-F ree" F5 30 S T HIS IS A N IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE A S SEMBLY LINE "L" A SSEM BLY LO T C O D E INTERNA T IONA L RECT IFIER LOG O PA RT NUM BER DA TE CODE YEAR 0 = 2000 WE E K 02 LIN E L /G79/G82 F530S A = A SSEM BLY SITE C O D E WEEK 02 P = DE S IGNAT E S L E AD-F R E E PRODUCT (OPTIONA L) RECTIFIER INTERNATIONAL LO G O LO T C O DE A SSEM BLY YEAR 0 = 2000 DAT E CODE PA RT NUM BER

12 www.irf.com TO-262 Part Marking Information Dimensions are shown in millimeters (inches) AS S E MB L Y LOT C ODE REC TIFIER INTERNATIONALAS S EMBLED ON WW 19, 1997 Note: "P" in asse mbly line p o sit io n in d ic a t e s " Le a d -Fr e e " IN THE A SSEM BLY LINE "C " LO G O THIS IS AN IRL3103L LOT CODE 1789 EXA M PLE: LINE C DAT E CODE WE EK 19 YEAR 7 = 1997 PART NUMBER PA RT NUM BER LO G O LO T C O DE A SSEM BLY INTERNATIONAL RECTIFIER PRODUC T (O PTIONA L) P = DE S IGNAT E S L E AD-F R E E A = AS S E MB L Y S IT E CODE WEE K 19 YEAR 7 = 1997 DAT E CODE OR

www.irf.com 13 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information .11/04 TO-220AB package is not recommended for Surface Mount Application. Notes: /G129 VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 50Ω. /G130 This is only applied to TO-220AB package. /G131/G32This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. /G132 Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE. /G68/G50/G80/G97/G107/G32/G84/G97/G112/G101/G32/G38/G32/G82/G101/G101/G108/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.