L8221 UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD L8221 LINEAR INTEGRATED CIRCUIT www.unisonic.com.tw 1 of 5 Copyright © 2017 Unisonic Technologies Co., Ltd QW-R123-020.B SINGLE LNB–BIAS, CONTROL AND POWER MANAGEMENT SOLUTION DESCRIPTION The UTC L8221 is a single chip power management and control solution for LNB’s. The highly integrated solution provides all the required FET and mixer bias, control detection and decoding, local oscillator switching and a stable power supply for the IF amplifier and additional support functions. Be ing at the heart of the LNB monitoring the control, powe r management and environmental conditions the UTC L8221 is able to provide reliable solution eliminating effects such as false switching and over loading. FEATURES * Single chip LNB bias, control and power management * 22kHz tone detector with signal rejection for band switching * Zero Gate FET switching * Integrated regulated supply for LNB * Voltage detection for polarization switching * Programmable mixer and FET bias * Single pin for supply and control * No external filtering required * Temperature compensated protected FET bias HSOP-8 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Packing L8221L-SH2-R L8221G-SH2-R HSOP-8 Tape Reel (1) R: Tape Reel (2) SH2: HSOP-8 (3) G: Halogen Free and Lead Free, L: Lead Free L8221G-SH2-R (1)Packing Type (2)Package Type (3)Green Package MARKING
L8221 LINEAR INTEGRATED CIRCUIT UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw Q W - R 1 2 3 - 0 2 0 . B PIN CONFIGURATION PIN DESCRIPTION PIN NO. PIN NAME DESCRIPTION
1 G1 To G of fet 1
2 D1 To D of fet 1
3 D2 To D of fet 2
4 G2 To G of fet 2
5 V OUT 5V Output Terminal
6 HB To HB osc.
7 V IN Power Supply (Include both voltage and tone signal)
8 CSUB Connect an external cap to -2.5V
9 GND Gnd (connect heat sink to ground)
BLOCK DIAGRAM
L8221 LINEAR INTEGRATED CIRCUIT UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw Q W - R 1 2 3 - 0 2 0 . B ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Supply Voltage VIN -0.6 ~ 25 V Supply Current IIN 120 mA Power Dissipation P D 1000 mW Operating Temperature Range T OPR -40 ~ +85 °C Storage Temperature Range T STG -40 ~ +125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, VIN=13V, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Supply Voltage Operating Range V IN 8 22 V Supply Current No Load Supply Current I IN (no load) I D1=ID2=0mA 2 3 mA Max Bias Load Current (Note1) I D1 or ID2 20 mA Max Osc Load Current (Note 1) HB 20 mA Max Lout Load Current (Note 1) 80 mA VOUT VOUT V OUT V IN=10.5V ~ 21V, IOUT=30mA 4.75 5 5.25 V (Internally generated), ISUB=0mA -3.0 -2.5 -2.0 V Substrate Voltage V SUB ISUB=-20uA -2.0 V VPOL Threshold V POL Applied Via V IN 14.1 14.7 15.4 V Pol Switching Speed T POL V IN (Low)=13V, VIN (High)=18V 1 ms Output Noise Drain Voltage C GATE-GND=4.7nF, CDRAIN-GND=10nF 0.02 Vpk-pk Gate Voltage IC GATE-GND=4.7nF, CDRAIN-GND=10nF 0.005 Vpk-pk Tone Detector Tdetect Threshold V TONE Test Circuit 100 170 300 mV Rejection Freq (Note 2) F TONE Test Circuit, V (AC) in=1Vp/p sq.w. 1.0 7.5 kHz Lo Output Stage HB VOUT Low V HBL II=0, Test Circuit , Tone disabled -0.01 0 0.01 V HB VOUT High V HBH II=20mA, Test Circuit, Tone enabled 4.5 V OUT V Gate Characteristics G1 Output Voltage Off V G1O I D1=0, VIN=14V, IG1=0 -0.05 0 0.05 V Voltage Low V G1L I D1<=12mA, VIN=15.5V, IG1=-10uA -3.0 -2.5 -2.0 V Voltage High V G1H I D1=>8mA, VIN=15.5V, IG1=0 0.35 0.5 1.0 V G2 Output Voltage Off V G2O I D2=0, VIN=15.5V, IG2=0 -0.05 0 0.05 V Voltage Low V G2L I D1<=12mA, VIN=14V, IG2=-10uA -3.0 -2.5 -2.0 V Voltage High V G2H I G2=>8mA, VIN=14V, IG2=0 0.35 0.5 1.0 V
L8221 LINEAR INTEGRATED CIRCUIT UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw Q W - R 1 2 3 - 0 2 0 . B ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain Characteristics D1 Output Voltage High V D1 I D1=10mA, VIN=15.5V 1.8 2.0 2.2 V Leakage Current I LEAK1 V D1=0.5, VIN=14V 10 uA D2 Output Voltage High V D2 I D2=10mA, VIN=14V 1.8 2.0 2.2 V Leakage Current I LEAK2 V D2=0.5, VIN=15.5V 10 uA D1, 2 Delta VD vs. VCC ∆VDV V CC=9 ~ 21V 0.5 %/V Delta VD vs. TJ ∆VDT T J=-40 ~ +85°C 50 ppm FET Current Range I D1, I D2 0 15 mA Drain Current I D I D1, ID2, RCALA=22K 8 10 12 mA Delta Id vs. VCC ∆IDV V CC=9 ~ 21V 0.5 %/V Delta Id vs. TJ ∆IDT T J=-40 ~ +85°C 0.05 %/°C Notes: 1. The total combined load currents should not exceed the stated maximum load current. 2. The UTC L8221 series will also reject DiSEqC and other common switching tone bursts.
L8221 LINEAR INTEGRATED CIRCUIT UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw Q W - R 1 2 3 - 0 2 0 . B TEST CIRCUIT The above is partial application circuit for the UTC L8221 series showing all external components required for appropriate biasing. The bias circuits are unconditionally stable over the full temperatur e range with the associated FETs and gate and drain capacitors in circuit. Capacitor s C1 and C2 ensure that residual power supply and substrate generator noise is not allowed to affect other ex ternal circuits which may be sensitive to RF interference. They also serve to suppress any potential RF feed through between stages via the UTC L8221 device. These capacitors are required for all stages used. Values of 10nF and 4.7nF respectively are recommended however this is design dependent and any value between 1nF and 100nF could be used. The capacitor CSUB is an integral part of the UTC L8221’s negative supply generator . The negative bias voltage is generated on-chip using an internal oscillator. The re quired value of capacitor CSUB is 47nF. This generator produces a low current supply of approximately -3 volts. Although this generator is intended purely to bias the external FETs, it can be used to power other external low current circuits via the CSUB pin. The UTC L8221 devices have been designed to protect the exte rnal FETs form adverse operating conditions. With a JFET connected to any bias circuit, the gate out put voltage of the bias circ uit can not exceed the range -3.0V~1V under any conditions, including power up and power down transients. Should the negative bias generator be shorted or overloaded so that the drain current of the external FETs can no longer be controlled, the drain supply to FETs is shut down to avoid damage to the FETs by excessive drain current. The UTC L8221 incorporates over and under voltage protection so is the receiver or installation develops a f ault the LNB will shut down and restart once operating conditions are back to normal. UTC assumes no responsibility for equipment failures that result from u sing products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition rang es, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or s ystems where malfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he information presented in this document does not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed without notice.