FMMTL718 ZETEX | Alldatasheet
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Technical content
C B E SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – DECEMBER 1997
FEATURES
Very low equivalent on-resistance; RCE(sat)=210mΩ at 1.5A COMPLEMENTARY TYPE – FMMTL618 PARTMARKING DETAIL – L78 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -20 V Collector-Emitter Voltage V CEO -20 V Emitter-Base Voltage V EBO -5 V Continuous Collector Current I C -1 A Peak Pulse Current I CM -2 A Base Current I B -200 mA Power Dissipation at Tamb=25°C P tot -500 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C FMMTL718
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -20 -65 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -20 -55 V I C=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.8 V IE=-100µA Collector Cut-Off Current I CBO -10 nA V CB=-15V Emitter Cut-Off Current I EBO -10 nA V EB=-4V Collector Cut-Off Current I CES -10 nA V CE=-15V Collector-Emitter Saturation Voltage VCE(sat) -33 -130 -230 -315 -50 -180 -320 -450 mV mV mV mV I C=-100mA, IB=-10mA* IC=-500mA, IB=-20mA* IC=-1A, IB=-50mA* IC=-1.5A,IB=-100mA Base-Emitter Saturation Voltage VBE(sat) -950 -1100 mV I C=-1.25A, IB=-100mA* Base-Emitter Turn On Voltage VBE(on) -850 -1000 mV I C=-1.25A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 300 200 120 500 450 320 200 I C=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-1A, VCE=-2V* IC=-1.5A, VCE=-2V* Transition Frequency f T 265 MHz I C=-50mA, VCE=-10V f=100MHz Collector-Base Breakdown Voltage Cobo 91 2 p F V CB=-10V, f=1MHz Switching times t on toff 108 121 ns ns IC=-1A, VCC=-10V IB1=IB2=-10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FMMTL718
1m 100m 10 0.1 10100m1m 1m 100m 10 IC - Collector Current (A) VCE(sat) v IC 0.5 VCE(sat) - (V) IC/IB=10 IC/IB=20 IC/IB=50 +25°C -55°C hFE - Typical Gain +100°C IC - Collector Current (A) hFE v IC +25°C +100°C VBE(on) - (V) -55°C IC - Collector Current (A) VBE(on) v IC +100°C +150°C VCE(sat) - (V) +25°C IC - Collector Current (A) VCE(sat) v IC +100°C +150°C VBE(sat) - (V) +25°C IC - Collector Current (A) VBE(sat) v IC 100ms IC - Collector Current (A) DC 10m VCE - Collector Emitter Voltage (V) Safe Operating Area 10ms 1ms 100µs+150°C VCE=2V +25°C -55°C IC/IB=10 VCE=2V -55°C IC/IB=10 10m 100m 1 0.1 0.2 0.3 0.4 10m 1 0.1 0.2 0.3 0.4 0.5 10m 1 400 800 0.4 0.8 1.2 10m 1 10m 1 0.2 0.4 0.6 0.8 1.2 11 0 1 0 0 100m TYPICAL CHARACTERISTICS