L7372

LM7372 NSC | Alldatasheet

Document overview

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Technical content

Features

n −80dBc highest harmonic distortion@1MHz, 2VPP n Very high slew rate: 3000V/µs n Wide gain bandwidth product: 120MHz n −3dB frequency@ AV = +2: 200MHz n Low supply current: 13mA (both amplifiers) n High open loop gain: 85dB n High output current: 150mA n Differential gain and phase: 0.01%, 0.02˚

Applications

n Multimedia broadcast systems n Professional video cameras n CATV/Fiber optics signal processing n Pulse amplifiers and peak detectors n HDTV amplifiers Typical Application 20004903 FIGURE 1. Single Supply Application (SOIC-16)

• Heatsink Pins. See note 4 20004901 Top View 8-Pin PSOP 20004929 Top View For PSOP SOIC-8 the exposed pad should be tied either to V− or left electrically floating. (die attach material is conductive and is internally tied to V

Ordering Information

Symbol Temperature Range Package Markiing Transport Media NSC Drawing−40˚C to +85˚C 16-Pin SOIC LM7372IMA LM7372IMA Rails M16ALM7372IMAX LM7372IMA 2.5k Units Tape and Reel 8-Pin LLP LM7372ILD L7372 1k Units Tape and Reel LDC08ALM7372ILDX L7372 4.5k Units Tape and Reel 8-Pin PSOP LM7372MR LM7372MR Rails MRA08ALM7372MRX LM7372MR 2.5k Units Tape and Reel LM7372 www.national.com 2

Absolute Maximum Ratings (Notes 1, If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance Human Body Model 1.5kV (Note 2) Machine Model 200V (Note 2) Suppy Voltage (V +−V−) 36V Differential Input Voltage (VS = ±15V) ±10V Output Short Circuit to Ground (Note 3) Continuous Storage Temp. Range −65˚C to 150˚C Soldering Information Infrared or Convection Reflow (20 sec.) 235˚C Wave Soldering Lead Temperature (10 sec.) 260˚C Input Voltage V − to V+ Maximum Junction Temperature (Note 4) 150˚C Operating Ratings(Note 1) Supply Voltage 9V ≤ VS ≤ 36V Junction Temperature Range(TJ) Thermal Resistance(θJA) 16-Pin SOIC See (Note 4) 106˚C/W 70˚C/W (See Application Section) 40˚C/W 8-Pin PSOP (See Application Section) 59˚C/W ±15V DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VCM = 0V and RL =1 kΩ .Boldfaceapply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units VOS Input Offset Voltage 2.0 8.0 10.0 mV TC VOS Input Offset Voltage Average Drift 12 µV/˚C IB Input Bias Current 2.7 10 µA IOS Input Offset Current 0.1 4.0 6.0 µA R IN Input Resistance Common Mode 40 M Ω Differential Mode 3.3 M Ω R O Open Loop Output Resistance 15 Ω CMRR Common Mode Rejection Ratio V CM = ±10V 75 93 dB PSRR Power Supply Rejection Ratio V S = ±15V to±5V 75 90 dB VCM Input Common-Mode Voltage Range CMRR > 60dB ±13 V AV Large Signal Voltage Gain (Note 7) RL =1 kΩ 75 85 dB R L = 100Ω 70 81 dB VO Output Swing R L =1 kΩ 13 12.7 13.4 V −13 −12.7 −13.3 V IOUT = − 150mA 11.8 11.4 12.4 V IOUT = 150mA −11.2 −10.8 −11.9 V ISC Output Short Circuit Current Sourcing 260 mA Sinking 250 mA LM7372 www.national.com3

±15V DC Electrical Characteristics(Continued) Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VCM = 0V and RL =1 kΩ .Boldfaceapply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units IS Supply Current (both Amps) 13 17 mA ±15V AC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VCM = 0V and RL =1 kΩ .Boldfaceapply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units SR Slew Rate (Note 8) A V = +2, VIN 13VP-P 3000 V/µs AV = +2, VIN 10VP-P 2000 Unity Bandwidth Product 120 MHz −3dB Frequency A V = +2 220 MHz φm Phase Margin A VOL = 6dB 70 deg tS Settling Time (0.1%) A V = −1, AO = ±5V, R L = 500Ω 50 ns tP Propagation Delay A V = −2, VIN = ±5V, R L = 500Ω 6.0 ns AD Differential Gain (Note 9) 0.01 % φD Differential Phase (Note 9) 0.02 deg hd2 Second Harmonic Distortion FIN = 1MHz, AV =+ 2 VOUT =2 VP-P,R L = 100Ω −80 dBc VOUT = 16.8VP-P,R L = 100Ω −73 dBc hd3 Third Harmonic Distortion FIN = 1MHz, AV =+ 2 VOUT =2 VP-P,R L = 100Ω −91 dBc VOUT = 16.8VP-P,R L = 100Ω −67 dBc IMD Intermodulation Distortion Fin 1 = 75kHz, Fin 2 = 85kHz V OUT = 16.8VP-P,R L = 100Ω −87 dBc en Input-Referred Voltage Noise f = 10kHz 14 nV/ in Input-Referred Current Noise f = 10kHz 1.5 pA/ ±5V DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VCM = 0V and RL =1 kΩ .Boldfaceapply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units VOS Input Offset Voltage 2.2 8.0 10.0 mV TC VOS Input Offset Voltage Average Drift 12 µV/˚C IB Input Bias Current 3.3 10 µA IOS Input Offset Current 0.1 4 µA R IN Input Resistance Common Mode 40 M Ω Differential Mode 3.3 M Ω R O Open Loop Output Resistance 15 Ω CMRR Common Mode Rejection Ratio V CM = ±2.5V 70 90 dB LM7372 www.national.com 4

±5V DC Electrical Characteristics(Continued) Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VCM = 0V and RL =1 kΩ .Boldfaceapply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units PSRR Power Supply Rejection Ratio V S = ±15V to±5V 75 90 dB VCM Input Common-Mode Voltage Range CMRR > 60dB ±3V AV Large Signal Voltage Gain (Note 7) RL =1 kΩ 70 78 dB R L = 100Ω 64 72 dB VO Output Swing R L =1 kΩ 3.2 3.0 3.4 V −3.2 −3.0 −3.4 V IOUT = − 80mA 2.5 2.2 2.8 V IOUT = 80mA −2.5 −2.2 −2.7 V ISC Output Short Circuit Current Sourcing 150 mA Sinking 150 mA IS Supply Current (both Amps) 12.4 16 mA ±5V AC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VCM = 0V and RL =1 kΩ .Boldfaceapply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units SR Slew Rate (Note 8) A V = +2, VIN 3VP-P 700 V/µs Unity Bandwidth Product 100 MHz −3dB Frequency A V = +2 125 MHz φm Phase Margin 70 deg tS Settling Time (0.1%) A V = −1, VO = ±1V, RL = 500Ω 70 ns tP Propagation Delay A V = +2, VIN = ±1V, RL = 500Ω 7n s AD Differential Gain (Note 9) 0.02 % φD Differential Phase (Note 9) 0.03 deg hd2 Second Harmonic Distortion FIN = 1MHz, AV =+ 2 VOUT =2 VP-P,R L = 100Ω −84 dBc hd3 Third Harmonic Distortion FIN = 1MHz, AV =+ 2 VOUT =2 VP-P,R L = 100Ω −94 dBc en Input-Referred Voltage Noise f = 10kHz 14 nV/ in Input-Referred Current Noise f = 10kHz 1.8 pA/ Note 1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. Note 2:For testing purposes, ESD was applied using human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω in series with 200pF. Note 3:Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150˚C. LM7372 www.national.com5

±5V AC Electrical Characteristics(Continued) Note 4:The maximum power dissipation is a function of T(JMAX),θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (T(JMAX) –T A)/θJA. All numbers apply for packages soldered directly into a PC board. The value forθJA is 106˚C/W for the SOIC 16 package. With a total area of 4sq. in of 1oz CU connected to pins 1,6,8,9 & 16,θJA for the SOIC 16 is decreased to 70˚C/W. Note 5:Typical values represent the most likely parametic norm. Note 6:All limits are guaranteed by testing or statistical analysis. Note 7:Large signal voltage gain is the total output swing divided by the input signal required to produce that swing. For VS = ±15V, VOUT = ± 10V. For VS = ±5V, VOUT = ±2V Note 8:Slew Rate is the average of the rising and falling slew rates. Note 9:Differential gain and phase are measured with AV = +2, VIN =1 VPP at 3.58 MHz and output is 150Ω terminated. Typical Performance Characteristics Harmonic Distortion vs. Frequency 20004904 Harmonic Distortion vs. Frequency 20004905 Harmonic Distortion vs. Frequency 20004906 Harmonic Distortion vs. Frequency 20004907 LM7372 www.national.com 6

Typical Performance Characteristics(Continued) Harmonic Distortion vs. Output Level Harmonic Distortion vs. Output Level 20004908 20004909 Harmonic Distortion vs. Output Level Harmonic Distortion vs. Output Level 20004910 20004911 Harmonic Distortion vs. Load Resistance Harmonic Distortion vs. Load Resistance 20004912 20004913 LM7372 www.national.com7

Typical Performance Characteristics(Continued) Harmonic Distortion vs. Load Resistance Harmonic Distortion vs. Load Resistance 20004914 20004915 Frequency Response Frequency Response 20004916 20004917 Frequency Response Small Signal Pulse Response 20004918 20004920 LM7372 www.national.com 8

Typical Performance Characteristics(Continued) Large Signal Pulse Response Thermal Performance of 8ld-LLP 20004921 20004922 Harmonic Distortion vs. Frequency Input Bias Current (µA) vs. Temperature 20004927 20004923 Output Voltage vs. Output Current 20004924 LM7372 www.national.com9

Simplified Schematic Diagram 20004928 Application Notes The LM7372 is a high speed dual operational amplifier with a very high slew rate and very low distortion, yet like many other op amps, it is used in conventional voltage feedback amplifier applications. Also, again like many op amps, it has a class AB output stage in order to be able to deliver high currents to low impedance loads, yet draw very little quies- cent supply current. For most op-amps in typical applica- tions, this topology means that internal power dissipation is rarely an issue, even with the trend to smaller surface mount packages. However, the LM7372 has been designed for applications where significant levels of power dissipation will be encountered, and an effective means of removing the internal heat generated by this power dissipation is needed to maintain the semiconductor junction temperature at ac- ceptable levels, particularly in environments with elevated ambient temperatures. Several factors contribute to power dissipation and conse- quently higher semiconductor junction temperatures, and these factors need to be well understood if the LM7372 is to perform to the desired specifications in a given application. Since different applications will have different dissipation levels and different compromises can be made between the ways these factors will contribute to the total junction tem- perature, this section will examine the typical application shown on the front page of this data sheet as an example, and offer suggestions for solutions where excessive junction temperatures are encountered. There are two major contributors to the internal power dissi- pation; the product of the supply voltage and the LM7372 quiescent current when no signal is being delivered to the external load, and the additional power dissipated while delivering power to the external load. The first of these components is easy to calculate simply by inspection of the data sheet. The LM7372 quiescent supply current is given as 6.5mA per amplifier, so with a 24Volt supply the power dissipation is P Q=V S x 2Iq (V S =V CC +V EE ) = 312mW This is already a high level of internal power dissipation, and in a small surface mount package with a thermal resistance JA = 140˚C/Watt (a not unreasonable value for an SO-8 package) would result in a junction temperature 140˚C/W x 0.312W = 43.7˚C above the ambient temperature. A similar calculation using the worst case maximum current limit at an 85˚C ambient will yield a power dissipation of 456mW with a junction temperature of 149˚C, perilously close to the maxi- mum permitted junction temperature of 150˚C! The second contributor to high junction temperature is the additional power dissipated internally when power is being delivered to the external load. This cause of temperature rise can be less amenable to calculation, even when the actual operating conditions are known. For a Class B output stage, one transistor of the output pair will conduct the load current as the output voltage swings positive, with the other transistor drawing no current, and hence dissipating no power. During the other half of the signal swing this situation is reversed, with the lower transis- tor sinking the load current and the upper transistor is cut off. The current in each transistor will be a half wave rectified version of the total load current. Ideally neither transistor will dissipate power when there is no signal swing, but will dissipate increasing power as the output current increases. However, as the signal voltage across the load increases with load current, the voltage across the output transistor (which is the difference voltage between the supply voltage and the instantaneous voltage across the load) will decrease and a point will be reached where the dissipation in the transistor will begin to decrease again. If the signal is driven into a square wave, ideally the transistor dissipation will fall all the way back to zero. LM7372 www.national.com 10

heatsink copper) to avoid parasitic coupling to the inputs. respective Evaluation Board documentation. FIGURE 3. Split Supply Application (LLP)

Physical Dimensionsinches (millimeters) unless otherwise noted 16-Pin SOIC 8-Pin LLP LM7372 www.national.com 14

Physical Dimensionsinches (millimeters) unless otherwise noted (Continued) 8-Pin PSOP LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Corporation Americas Email: support@nsc.com National Semiconductor Europe Fax: +49 (0) 180-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 69 9508 6208 English Tel: +44 (0) 870 24 0 2171 Français Tel: +33 (0) 1 41 91 8790 National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: ap.support@nsc.com National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507 www.national.com LM7372 High Speed, High Output Current, Dual Operational Amplifier National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.