L6571A_0009 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
■ HIGH VOLTAGE RAIL UP TO 600V ■ BCD OFF LINE TECHNOLOGY ■ 15.6V ZENER CLAMP ON V S ■ DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA ■ VERY LOW START UP CURRENT: 150 µA ■ UNDER VOLTAGE LOCKOUT WITH HYSTERESIS ■ PROGRAMMABLE OSCILLATOR FREQUENCY ■ DEAD TIME 1.25µs (L6571A) or 0.72µs (L6571B) ■ dV/dt IMMUNITY UP TO ±50V/ns ■ ESD PROTECTION
DESCRIPTION
The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capaci- tor. The internal circuitry of the device allows it to be driven also by external logic signal. The output drivers are designed to drive external n- channel power MOSFET and IGBT. The internal log- ic assures a dead time to avoid cross-conduction of the power devices. Two version are available: L6571A and L6571B. They differ in the internal dead time: 1.25 µs and 0.72µs( t y p . ) Minidip SO8 ORDERING NUMBERS: L6571A L6571AD L6571B L6571BD HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR BLOCK DIAGRAM R F C F LOGIC BIAS REGULATOR COMP COMP LEVEL SHIFTER BUFFERR F C F GND HIGH SIDE DRIVER LOW SIDE DRIVER HVG LVG OUT BOOTVS R HVC VS C BOOT H.V. LOAD D96IN433 VS VS
(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low im- pedance power source. Note:ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model) THERMAL DATA RECOMMENDED OPERATING CONDITIONS PIN CONNECTION Symbol Parameter Value Unit IS (*) Supply Current 25 mA VCF Oscillator Resistor Voltage 18 V VLVG Low Side Switch Gate Output 14.6 V VOUT High Side Switch Source Output -1 to V BOOT -1 8 V VHVG High Side Switch Gate Output -1 to V BOOT V VBOOT Floating Supply Voltage 618 V VBOOT/OUT Floating Supply vs OUT Voltage 18 V dVBOOT /dt VBOOT Slew Rate (Repetitive) ± 50 V/ns dV OUT /dt VOUT Slew Rate (Repetitive) ± 50 V/ns Tstg Storage Temperature -40 to 150 °C Tj Junction Temperature -40 to 150 °C Tamb Ambient Temperature (Operative) -40 to 125 °C Symbol Parameter Minidip SO8 Unit Rth j-amb Thermal Resistance Junction-Ambient Max 100 150 °C/W Symbol Parameter Min. Max. Unit VS Supply Voltage 10 V CL V VBOOT Floating Supply Voltage - 500 V VOUT High Side Switch Source Output -1 V BOOT -VCL V fout Oscillation Frequency 200 kHz VS R F C F GND
4 LVG
ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT -VOUT = 12V; Tj= 25°C; unless otherwise specified.) N° Pin Description 1 VS Supply input voltage with internal clamp [typ. 15.6V] 2 RF Oscillator timing resistor pin. A buffer set alternatively to VS and GND can provide current to the external resistor RF connected between pin 2 and 3. Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569/71 to drive a full H-bridge) 3 CF Oscillator timing capacitor pin. A capacitor connected between this pin and GND fixes (together with RF) the oscillating frequency Alternatively an external logic signal can be applied to the pin to drive the IC.
4 GND Ground
5 LVG Low side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values].
6 OUT Upper driver floating reference
7 HVG High side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. 8 BOOT Bootstrap voltage supply. It is the upper driver floating supply. Symbol Pin Parameter Test Condition Min. Typ. Max. Unit V SUVP 1 VS Turn On Threshold 8.3 9 9.7 V VSUVN VS Turn Off Threshold 7.3 8 8.7 V VSUVH VS Hysteresis 0.7 1 1.3 V VCL VS Clamping Voltage I S = 5mA 14.6 15.6 16.6 V ISU Start Up Current V S <V SUVN 150 250 µA Iq Quiescent Current V S >V SUVP 500 700 µA IBOOTLK 8 Leakage Current BOOT pin vs GND VBOOT =5 8 0 V 5 µA IOUTLK 6 Leakage Current OUT pin vs GND VOUT =5 6 2 V 5 µA IHVG SO 7 High Side Driver Source Current VHVG = 6V 110 175 mA IHVG SI High Side Driver Sink Current VHVG = 6V 190 275 mA ILVG SO 5 Low Side Driver Source Current VLVG = 6V 110 175 mA ILVG SI Low Side Driver Sink Current VLVG = 6V 190 275 mA VRFO N 2 RF High Level Output Voltage I RF =1 m A VS -0.05 VS -0.2 V VRF OFF RF Low Level Output Voltage I RF = -1mA 50 200 mV VCFU 3 CF Upper Threshold 7.7 8 8.2 V VCFL CF Lower Threshold 3.80 4 4.3 V td Internal Dead Time L6571A L6571B 0.85 0.50 1.25 0.72 1.65 0.94 µs µs
The frequency of the internal oscillator can be programmed using external resistor and capacitor. Where RF and CF are the external resistor and capacitor.
- When CF is to GND the high side driver is off and the low side is on
- The forced discharge of the oscillator capacitor CF must not be shorter than 1us: a simple way to do this is to
Figure 2. Waveforms
DIM. mm inch A 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 a3 0.65 0.85 0.026 0.033 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.020 c1 45 ° (typ.) D (1) 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F (1) 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S8 ° (max.) (1) D and F do not include mold flash or protrusions. Mold flash or potrusions shall not exceed 0.15mm (.006inch). SO8 OUTLINE AND MECHANICAL DATA
DIM. mm inch A 3.32 0.131 a1 0.51 0.020 B 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 D 10.92 0.430 E 7.95 9.75 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 6.6 0.260 I 5.08 0.200 L 3.18 3.81 0.125 0.150 Z 1.52 0.060 OUTLINE AND MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com L6571A L6571B