L6372 VBSEMI | Alldatasheet
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Technical content
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
- TrenchFETPower MOSFET 100 % R g Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Notebook System Power Low Current DC/DC PRODUCT SUMMARY RDS(on) (VDS (V) ) ID (A)a Qg (Typ.) 0.016 at VGS = 10 V 8.5 7.1 0.020 at VGS = 4.5 V 7.6 S 1 G D 1
1 D 1
Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 VGate-Source Voltage VGS ± 20 TC = 25 ° Continuous Drain Current (TJ = 150 °C) C ID 8.5 TC = 70 ° A C 7.5 TA = 25 °C TA = 70 °C Pulsed Drain Current 7.2b, c 5.9b, c IDM 30 TC = 25 °Source-Drain Current Diode Current C IS 2.8 TA = 25 °C Pulsed Source-Drain Current 1.8b, c ISM 30 Single Pulse Avalanche Current IL = 0.1 mH AS 10 Single Pulse Avalanche Energy EAS 5 TC = 25 ° Maximum Power Dissipation C PD 3.1 TC = 70 ° WC 2.0 TA = 25 °C 2.0b, c TA = 70 °C Operating Junction and Storage Temperature Range 1.25b, c TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter TSymbol yp. Max. Unit t Maximum Junction-to-Ambientb, d 10 s RthJA 52 62.5 °C/W Maximum Junction-to-Foot (Drain) RthSteady-State JF 30 40 L6372-VB www.VBsemi.com g
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VGS = 0 V, ID VDrain-Source Breakdown Voltage DS = 250 µA 30 V VDS/T VDS Temperature Coefficient J ID = 250 µA 3.0 mV/°CVGS(th)/T VGS(th) Temperature Coefficient J ID = 250 µA - 5.2 VGS(tGate Threshold Voltage h) VDS = VGS, ID= 250 µA 1.2 2.5 V IGate-Body Leakage GSS VDS = 0 V, VGS = ± 20 V 100 nA VDS = 30 V, VGS IZero Gate Voltage Drain Current DSS = 0 V 1 µAVDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On -State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-State Resistanceb VGS = 10 V, ID RDS(on) = 8 A 0.016 VGS = 4.5 V, ID = 5 A 0.020 Forward Transconductanceb VDS = 15 V, ID gfs = 8 A 27 S Dynamica CInput Capacitance iss VDS = 15 V, VGS = 0 V, ID = 1 MHz 660 COutput C pFapacitance oss 140 CReverse Transfer Capacitance rss 86 VDS = 15 V, VGS = 10 V, ID QTotal Gate Charge g = 8 A 14.5 22 nC VDS = 15 V, VGS = 4.5 V, ID = 8 A 7.1 1 QGate-Source Charge gs 1.9 QGate-Drain Charge gd 2.7 RGate Resistance g f = 1 MHz 0.5 2.6 5.2 tTur n-On Delay Time d(on) VDD = 15 V, RL = 3 ID 5 A, VGEN = 4.5 V, Rg = 1 14 28 t ns Rise Time r 45 80 tTurn-Off Delay Time d(off) 18 35 tFall Time f 12 24 td(onTurn-On Delay Time ) VDD = 15 V, RL = 3 ID 5 A, VGEN = 10 V, Rg = 1 71 4 tRise Time r 10 20 tTurn-Off Delay Time d(off) 15 30 tFall Time f 71 4 Drain-Source Body Diode Characteristics TC = 25IContinuous Source-Drain Diode Current S °C 2.8 A Pulse Diode Forward Currenta ISM 30 V Body Diode Voltage SD IS = 2 A 0.77 1.1 V tBody Diode Reverse Recovery Time rr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 17 34 ns QBody Diode Reverse Recovery Charge rr n91 8 C tReverse Recovery Fall Time a 10 nStReverse Recovery Rise Time b 7 L6372-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge =1 0 V thru 4VGS V VGS =3 V VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) 0.01 0.010 0.014 0.022 0.026 0.030 0 102 03 04 05 0 VGS =4 .5 V - On-Resistance (Ω VGS =1 0 V )RDS(on) ID - Drain Current (A) VDS =2 0 V VDS =1 0 V ID = 8 A Voltage (V =1 5VDS V )VGS - Gate-to-Sou Qg - Total Gate Charge (nC) rce Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 01 2 345 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) D - Drain CuI rrent (A) Crss 200 400 600 1000 Cis 06 24 30 s Coss C - Capacitance 12 1 8 VDS - Drain-to-Source Voltage (V) (pF) 0.6 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 ID = 8 A GS =4 .5V V VGS =1 0 V RDS(on) - On- TJ -J unction Temperature (°C) ormalized) Resistance L6372-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 1.0 1.2 0.01 0.001 0.1 100 TJ = 150 °C TJ = 25 °C I S - Source Cu 0.4 0.6 0. 8 VSD -S ource-to-Drain Voltage (V) rrent (A) - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA VGS(th) Variance (V ID =5m A On-Resistan TJ - Temperature (°C) ce vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.00 0.02 0.04 0.06 0.10 012 345 67 8 91 0 TJ = 25 °C ID = 8 A TJ = 125 °C VGS - Gate-to-Source Voltage (V DS(on) - On-Resistance (ΩR ) 0 111 0 0 .00 Power (W .01 0.1 Time (s) Safe Operating Area, Junction-to-Ambient 0.01 100 100 0.01 0.1 1m s 10 ms 0.1 1 10 TA = 25 °C Single Pulse Limited byR DS(on)* 10 s DCBVDSS Limited 100 ms ID - Drain Cu VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified rrent (A) L6372-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is based on TJ(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 255 07 5 1 0 0 1 2 5 1 5 0 TC - Case Temperature (°C) I D - Drain Current (A) Power Derating, Junction-to-Foot 4.0 3.2 2.4 1.6 0.8 0.0 Power (W 50 75 100 125 150 TC - Case Temperatu re (°C) Power Derating, Junction-to-Ambient 1.5 1.2 0.9 0.6 0.3 0.0 0 25 Power (W 50 75 100 125 150 TA -A mbient Temperature (°C) L6372-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 110 10 10 1000-1-4 100 0.2 0.1 Normalized Effectiv Square WaveP ulse Duration (s) e Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA =1 10 ° C /W t 3. TJM -T A =P DMZthJA(t) Surface Mou4. nted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-210 10 0 11-1-4 0.2 0.1 Duty Cycle = 0.5 Normalized Effectiv Square WaveP ulse Duration (s) e Transient Thermal Impedance 0.1 0.01 0.05 PuSingle lse 0.02 L6372-VB www.VBsemi.com g
A 1.35 1.75 0.053 0.069 A1 0.20.10 0 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm BA 0.004"L1 A e D SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS 0.25 mm (Gage Plane) -012 S L6372-VB www.VBsemi.com g
RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) 0.172 Dimensions in Inches/(mm) (4.369) 0.047 0.152 (3.861)(1.194) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads 0.022 (0.559) Return to Index L6372-VB www.VBsemi.com g
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