L6201

L6201 STMICROELECTRONICS | Alldatasheet

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5A MAX PEAK CURRENT (2A max. for L6201) TOTAL RMS CURRENT UP TO L6201: 1A; L6202: 1.5A; L6203/L6201PS: 4A R DS (ON) 0.3 Ω (typical value at 25 °C) CROSS CONDUCTION PROTECTION TTL COMPATIBLE DRIVE OPERATING FREQUENCY UP TO 100 KHz THERMAL SHUTDOWN INTERNAL LOGIC SUPPLY HIGH EFFICIENCY

DESCRIPTION

The I.C. is a full bridge driver for motor control ap- plications realized in Multipower-BCD technology which combines isolated DMOS power transistors with CMOS and Bipolar circuits on the same chip. By using mixed technology it has been possible to optimize the logic circuitry and the power stage to achieve the best possible performance. The DMOS output transistors can operate at supply voltages up to 42V and efficiently at high switch- ing speeds. All the logic inputs are TTL, CMOS and µC compatible. Each channel (half-bridge) of the device is controlled by a separate logic input, while a common enable controls both channels. The I.C. is mounted in three different packages. This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice. July 2003 MULTIPOWER BCD TECHNOLOGY BLOCK DIAGRAM ORDERING NUMBERS: L6201 (SO20) L6201PS (PowerSO20) L6202 (Powerdip18) L6203 (Multiwatt) SO20 (12+4+4) Multiwatt11 Powerdip 12+3+3 PowerSO20

PIN CONNECTIONS (Top view) SO20 GND N.C. N.C. N.C. OUT2 OUT1 VS BOOT1 IN1 N.C. GND 10

11 GND

N.C. N.C. GND PowerSO20 MULTIWATT11 POWERDIP L6201 - L6202 - L6203

Name FunctionL6201 L62 01PS L6202 L 6203 1 16 1 10 SENSE A resistor R sense connected to this pin provides feedback for motor current control. 2 17 2 11 ENAB LE When a logic high is present on this pin the DMOS POWER transistors are enabled to be selectively driven by IN1 and IN2. 3 2,3,9,12, 18,19 3 N.C. Not Connected 4,5 – 4 GND Common Ground Terminal – 1, 10 5 GND Common Ground Terminal 6,7 – 6 GND Common Ground Terminal 8 – 7 N.C. Not Connected 9 4 8 1 OUT2 Ouput of 2nd Half Bridge 10 5 9 2 V s Supply Voltage 11 6 10 3 OUT1 Output of first Half Bridge 12 7 11 4 BOOT1 A boostrap capacitor connected to this pin ensures efficient driving of the upper POWER DMOS transistor. 13 8 12 5 IN1 Digital Input from the Motor Controller 14,15 – 13 GND Common Ground Terminal – 11, 20 14 GND Common Ground Terminal 16,17 – 15 GND Common Ground Terminal 18 13 16 7 IN2 Digital Input from the Motor Controller 19 14 17 8 BOOT2 A boostrap capacitor connected to this pin ensures efficient driving of the upper POWER DMOS transistor. 20 15 18 9 V ref Internal voltage reference. A capacitor from this pin to GND is recommended. The internal Ref. Voltage can source out a current of 2mA max. Symbol Parameter Value Unit Vs Power Supply 52 V VOD Differential Output Voltage (between Out1 and Out2) 60 V VIN, VEN Input or Enable Voltage – 0.3 to + 7 V Io Pulsed Output Current for L6201PS/L6202/L6203 (Note 1) – Non Repetitive (< 1 ms) for L6201 for L6201PS/L6202/L6203 DC Output Current for L6201 (Note 1) A A A A Vsense Sensing Voltage – 1 to + 4 V Vb Boostrap Peak Voltage 60 V Ptot Total Power Dissipation: Tpins = 90°C for L6201 for L6202 Tcase = 90°C for L6201PS/L6203 Tamb = 70°C for L6201 (Note 2) for L6202 (Note 2) for L6201PS/L6203 (Note 2) 0.9 1.3 2.3 W W W W W W T stg, Tj Storage and Junction Temperature – 40 to + 150 °C Note 1: Pulse width limited only by junction temperature and transient thermal impedance (see thermal characteristics) Note 2: Mounted on board with minimized dissipating copper area. ABSOLUTE MAXIMUM RATINGS L6201 - L6202 - L6203

Symbol Parameter Value Unit L6201 L6201PS L6202 L6203 Rth j-pins Rth j-case Rth j-amb Thermal Resistance Junction-pins max Thermal Resistance Junction Case max. Thermal Resistance Junction-ambient max. 13 (*) °C/W (*) Mounted on aluminium substrate. ELECTRICAL CHARACTERISTICS (Refer to the Test Circuits; Tj = 25°C, VS = 42V, Vsens = 0, unless otherwise specified). Symbol Parameter Test Conditions Min. Typ. Max. Unit Vs Supply Voltage 12 36 48 V Vref Reference Voltage I REF = 2mA 13.5 V IREF Output Current 2m A Is Quiescent Supply Current EN = H V IN = L EN = H VIN = H EN = L ( Fig. 1,2,3) IL = 0 mA mA mA f c Commutation Frequency (*) 30 100 KHz Tj Thermal Shutdown 150 °C Td Dead Time Protection 100 ns TRANSISTORS OFF IDSS Leakage Current Fig. 11 V s = 52 V 1 mA ON R DS On Resistance Fig. 4,5 0.3 0.55 Ω VDS(ON) Drain Source Voltage Fig. 9 IDS = 1A IDS = 1.2A IDS = 3A L6201 L6202 L6201PS/0 0.3 0.36 0.9 V V V V sens Sensing Voltage – 1 4 V SOURCE DRAIN DIODE Vsd Forward ON Voltage Fig. 6a and b ISD = 1A L6201 EN = L ISD = 1.2A L6202 EN = L ISD = 3A L6201PS/03 EN = L 0.9 () 0.9 () 1.35(**) V V V trr Reverse Recovery Time dif dt = 25 A/µs IF = 1A IF = 1.2A IF = 3A L6201 L6202 L6203 300 ns t fr Forward Recovery Time 200 ns LOGIC LEVELS VIN L, VEN L Input Low Voltage – 0.3 0.8 V VIN H, VEN H Input High Voltage 2 7 V IIN L, IEN L Input Low Current V IN, VEN = L –10 µA IIN H, IEN H Input High Current V IN, VEN = H 30 µA L6201 - L6202 - L6203

To ensure that the POWER DMOS transistors are driven correctly gate to source voltage of typ. 10 V must be guaranteed for all of the N-channel DMOS transistors. This is easy to be provided for the lower POWER DMOS transistors as their sources are refered to ground but a gate voltage greater than the supply voltage is necessary to drive the upper transistors. This is achieved by an internal charge pump circuit that guarantees cor- rect DC drive in combination with the boostrap cir- cuit. For efficient charging the value of the boos- trap capacitor should be greater than the input capacitance of the power transistor which is around 1 nF. It is recommended that a capaci- tance of at least 10 nF is used for the bootstrap. If a smaller capacitor is used there is a risk that the POWER transistors will not be fully turned on and they will show a higher RDS (ON). On the other hand if a elevated value is used it is possible that a current spike may be produced in the sense re- sistor. Reference Voltage To by-pass the internal Ref. Volt. circuit it is rec- ommended that a capacitor be placed between its pin and ground. A value of 0.22 µF should be suf- ficient for most applications. This pin is also pro- tected against a short circuit to ground: a max. current of 2mA max. can be sinked out. Dead Time To protect the device against simultaneous con- duction in both arms of the bridge resulting in a rail to rail short circuit, the integrated logic control provides a dead time greater than 40 ns. Thermal Protection A thermal protection circuit has been included that will disable the device if the junction tempera- ture reaches 150 °C. When the temperature has fallen to a safe level the device restarts the input and enable signals under control.

APPLICATION INFORMATION

During recirculation with the ENABLE input high, the voltage drop across the transistor is RDS (ON)⋅ IL, clamped at a voltage depending on the characteristics of the source-drain diode. Al- though the device is protected against cross con- duction, current spikes can appear on the current sense pin due to charge/discharge phenomena in the intrinsic source drain capacitances. In the ap- plication this does not cause any problem be- cause the voltage spike generated on the sense resistor is masked by the current controller circuit. Rise Time T r (See Fig. 16) When a diagonal of the bridge is turned on cur- rent begins to flow in the inductive load until the maximum current I L is reached after a time Tr. The dissipated energy EOFF/ON is in this case : EOFF/ON = [RDS (ON) ⋅ IL2 ⋅ Tr] ⋅ 2/3 Load Time TLD (See Fig.16) During this time the energy dissipated is due to the ON resistance of the transistors (ELD ) and due to commutation (ECOM ). As two of the POWER DMOS transistors are ON, EON is given by : ELD = IL2 ⋅ RDS (ON) ⋅ 2 ⋅ TLD In the commutation the energy dissipated is : ECOM = VS ⋅ IL ⋅ TCOM ⋅ fSWITCH ⋅ TLD Where : TCOM = TTURN-ON = TTURN-OFF fSWITCH = Chopping frequency. Fall Time Tf (See Fig. 16) It is assumed that the energy dissipated in this part of the cycle takes the same form as that shown for the rise time : EON/OFF = [RDS (ON) ⋅ IL2 ⋅ Tf] ⋅ 2/3 Figure 16. L6201 - L6202 - L6203

The last contribution to the energy dissipation is due to the quiescent supply current and is given by: EQUIESCENT = IQUIESCENT ⋅ Vs ⋅ T Total Energy Per Cycle ETOT = EOFF/ON + ELD + ECOM + + EON/OFF + EQUIESCENT The Total Power Dissipation PDIS is simply : PDIS = ETOT /T Tr = Rise time TLD = Load drive time Tf = Fall time Td = Dead time T = Period T = T r + TLD + Tf + Td DC Motor Speed Control Since the I.C. integrates a full H-Bridge in a single package it is idealy suited for controlling DC mo- tors. When used for DC motor control it performs the power stage required for both speed and di- rection control. The device can be combined with a current regulator like the L6506 to implement a transconductance amplifier for speed control, as shown in figure 17. In this particular configuration only half of the L6506 is used and the other half of the device may be used to control a second motor. The L6506 senses the voltage across the sense resistor R S to monitor the motor current: it com- pares the sensed voltage both to control the speed and during the brake of the motor. Between the sense resistor and each sense input of the L6506 a resistor is recommended; if the connections between the outputs of the L6506 and the inputs of the L6203 need a long path, a resistor must be added between each input of the L6203 and ground. A snubber network made by the series of R and C must be foreseen very near to the output pins of the I.C.; one diode (BYW98) is connected be- tween each power output pin and ground as well. The following formulas can be used to calculate the snubber values: R ≅ V S/lp C = lp/(dV/dt) where: VS is the maximum Supply Voltage foreseen on the application; Ip is the peak of the load current; dv/dt is the limited rise time of the output voltage (200V/µs is generally used). If the Power Supply Cannot Sink Current, a suit- able large capacitor must be used and connected near the supply pin of the L6203. Sometimes a capacitor at pin 17 of the L6506 let the application better work. For motor current up to 2A max., the L6202 can be used in a similar circuit configura- tion for which a typical Supply Voltage of 24V is recommended. Figure 17: Bidirectional DC Motor Control L6201 - L6202 - L6203

DIM. mm inch a1 0.51 0.020 B 0.85 1.40 0.033 0.055 b 0.50 0.020 b1 0.38 0.50 0.015 0.020 D 24.80 0.976 E 8.80 0.346 e 2.54 0.100 e3 20.32 0.800 F 7.10 0.280 I 5.10 0.201 L 3.30 0.130 Z 2.54 0.100 OUTLINE AND MECHANICAL DATA L6201 - L6202 - L6203

A eB D E L K H A1 C SO20MEC h x 45˚ SO20 DIM. mm inch A 2.35 2.65 0.093 0.104 A1 0.1 0.3 0.004 0.012 B 0.33 0.51 0.013 0.020 C 0.23 0.32 0.009 0.013 D 12.6 13 0.496 0.512 E 7.4 7.6 0.291 0.299 e 1.27 0.050 H 10 10.65 0.394 0.419 h 0.25 0.75 0.010 0.030 L 0.4 1.27 0.016 0.050 K 0˚ (min.)8˚ (max.) OUTLINE AND MECHANICAL DATA L6201 - L6202 - L6203

e a2 A E PSO20MEC DETAIL A T D 11 0 1120 E1E2 h x 45 DETAIL Alead sluga3 S Gage Plane 0.35 L DETAIL B R DETAIL B (COPLANARITY) GC - C - SEATING PLANE b c NN H BOTTOM VIEW DIM. mm inch A 3.6 0.142 a1 0.1 0.3 0.004 0.012 a2 3.3 0.130 a3 0 0.1 0.000 0.004 b 0.4 0.53 0.016 0.021 c 0.23 0.32 0.009 0.013 D (1) 15.8 16 0.622 0.630 D1 9.4 9.8 0.370 0.386 E 13.9 14.5 0.547 0.570 e 1.27 0.050 e3 11.43 0.450 E1 (1) 10.9 11.1 0.429 0.437 E2 2.9 0.114 E3 5.8 6.2 0.228 0.244 G 0 0.1 0.000 0.004 H 15.5 15.9 0.610 0.626 h 1.1 0.043 L 0.8 1.1 0.031 0.043 N 8˚ (typ.) S 8˚ (max.) T 10 0.394 (1) “D and E1” do not include mold flash or protusions. - Mold flash or protusions shall not exceed 0.15mm (0.006”) - Critical dimensions: “E”, “G” and “a3”. PowerSO20 0056635 JEDEC MO-166 Weight: 1.9gr L6201 - L6202 - L6203

DIM. mm inch A 5 0.197 B 2.65 0.104 C 1.6 0.063 D 1 0.039 E 0.49 0.55 0.019 0.022 F 0.88 0.95 0.035 0.037 H1 19.6 0.772 H2 20.2 0.795 L2 17.4 18.1 0.685 0.713 L7 2.65 2.9 0.104 0.114 S 1.9 2.6 0.075 0.102 S1 1.9 2.6 0.075 0.102 Dia1 3.65 3.85 0.144 0.152 OUTLINE AND MECHANICAL DATA L6201 - L6202 - L6203

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