L6122 STMICROELECTRONICS | Alldatasheet

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Technical content

100 V DMOS SWITCHES

.OUTPUT VOLTAGE TO 100V .0,5Ω RDS (on) .SUPPLY VOLTAGE UP TO 60V .LOW INPUT CURRENT .TTL/CMOS COMPATIBLE INPUTS .HIGH SWITCHING FREQUENCY (200kHz)

DESCRIPTION

Realized with the Multipower-BCD mixed bipo- lar/CMOS/DMOS process, the L6122/23monolithic three DMOS switch is designed for high current, high voltage switching applications. Each of the three switches is controlled by a logic input and all three are controlled by a common enable input. All inputs are TTL/CMOS compatible for direct connec- tion to logic circuits. Each source is available for the insertion of the senseresistors in current control ap- plications. Two versions are available : the L6122 mounted in a Powerdip 14 + 3 + 3 package and the L6123 in a 15-lead Multiwatt package. Powerdip 14+3+3 (Plastic Package) ORDERING NUMBER : L6122 This is advanced information on a new product now in development or undergo ing evaluation. Details are subject to change without notice. MULTIWATT15V (Plastic Package) ORDERING NUMBER : L6123 PIN CONNECTIONS (top view) L6122 (POWERDIP) L6123 (MULTIWATT15V) MULTIPOWER BCD TECHNOLOGY

Symbol Parameter Value Unit VDS Drain-source Voltage 100 V VCC Supply Voltage 60 V ID Continuous Drain Current @ Tpins=9 0°C, POWERDIP @T case =9 0°C, MULTIWATT 1.5 A A IDM (*) Pulsed Drain Current POWERDIP MULTIWATT A A ISD Continuous Source-drain @ Tpins=9 0°C, POWERDIP Diode Current @ T case =9 0°C, MULTIWATT 1.5 A A ISDM Pulsed Source Drain Diode Current POWERDIP MULTIWATT A A VIN Input Voltage 7 V VEN Enable Voltage 7 V VS Source Voltage – 1 to + 4 V Ptot Total Power Dissipation @ Tpins=9 0°C, POWERDIP @T case =9 0°C, MULTIWATT @T amb =7 0°C, POWERDIP @T amb =7 0°C, MULTIWATT 4.3 1.3 2.3 W W W W T stg,T j Storage and Junction Temperature Range – 40 to + 150 °C (*) Pulse width≤ 300 µs, duty cycle≤ 10 %. NOTE : ID,IDM ,ISD ,ISDM are given per channel. THERMAL DATA Symbol Parameter POWERDIP14+3+3 MULTIWATT15 Unit R th j-pins Thermal Resistance Junction-pins Max. 14 - oC/W R th j-case Thermal Resistance Junction-case Max. - 3 oC/W R th j-amb Thermal Resistance Junction-ambient Max. 65 35 oC/W L6122 - L6123

SWITCHING TIMES RESISTIVE LOAD Figure 1 :Test Circuit. ELECTRICAL CHARACTERISTICS (Tj =2 5oC, VCC = 40V, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Supply Voltage 14 48 V ICC Supply Current All V IN =H VEN = Square Wave (200kHz, 50% DC) 9m A IQ Quiescent Current V EN =L 2 3 m A BV DSS Drain Source Breakdown Voltage ID = 1mA VEN =L 100 V IDSS Output Leakage Current V EN =L VDS = 100V VDS = 80V, Tj = 125°C1 mA R DS(on) (*) Static Drain-source on Resistance VCC ≥ 14V, ID = 1.5A - VEN ,V IN = H 0.7 Ω VINL,V ENL Input Low Voltage - 0.3 0.8 V VINH,V ENH Input High Voltage 2 7 V IINL,IENL Input Low Current V IN,V EN = L - 100 µA IINH,IENH Input High Current V IN,V EN =H 1 0 µA td (on) Turn on Delay Time ID = 1.5A See Test Circuit and Waveforms 300 ns tr Rise Time 100 ns td (off) Turn off Delay Time 400 ns tf Fall Time 100 ns VSD (*) Source Drain Diode Forward Voltage ISD = 1.5A, VEN = L 1.5 V VSD(on) (*) Source Drain Forward Voltage ISD = 1.5A - VIN,V EN = H 1.2 V (*) Pulse test : pulse width = 300µs, duty cycle = 2 %. L6122 - L6123

Figure 9 :Peak Transient Thermal Resistance vs. Pulse Width and Duty Cycle (Multiwatt). L6122 - L6123

MULTIWATT15 PACKAGE MECHANICAL DATA DIM. mm inch A 5 0.197 B 2.65 0.104 C 1.6 0.063 D 1 0.039 E 0.49 0.55 0.019 0.022 F 0.66 0.75 0.026 0.030 H1 19.6 0.772 H2 20.2 0.795 L 22.1 22.6 0.870 0.890 L1 22 22.5 0.866 0.886 L2 17.65 18.1 0.695 0.713 L7 2.65 2.9 0.104 0.114 S 1.9 2.6 0.075 0.102 S1 1.9 2.6 0.075 0.102 Dia1 3.65 3.85 0.144 0.152 L6122 - L6123

POWERDIP20 PACKAGE MECHANICAL DATA DIM. mm inch a1 0.51 0.020 B 0.85 1.40 0.033 0.055 b 0.50 0.020 b1 0.38 0.50 0.015 0.020 D 24.80 0.976 E 8.80 0.346 e 2.54 0.100 e3 22.86 0.900 F 7.10 0.280 I 5.10 0.201 L 3.30 0.130 Z 1.27 0.050 L6122 - L6123

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica- tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre- viously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved MULTIWATT  is a Registered Trademark of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. L6122 - L6123