L6114 STMICROELECTRONICS | Alldatasheet

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QUAD 100 V, DMOS SWITCH .OUTPUT VOLTAGE TO 100 V .0.7 Ω RDS(ON) .SUPPLY VOLTAGE UP TO 60 V .LOW INPUT CURRENT .TTL/CMOS COMPATIBLE INPUTS .HIGH SWITCHING FREQUENCY (200 KHz)

DESCRIPTION

Realized with the Multipower-BCD mixed bipo- lar/CMOS/DMOS process, the L6114/15 monolithic quad DMOS switch is designed for high current, high voltage switching applications. Each of the four switches is controlled by a logic input and all four are controlled by a common enable input. All inputs are TTL/CMOS compatible for direct connection to logic circuits. Each source is available for the insertion of the sense resistors in current control applications. Two versions are available : the L6114 mounted in a Powerdip 14+3+3 package and the L6115 in a 15- lead Multiwatt package. ORDERING NUMBERS : L6114 (Powerdip) L6115 (Multiwatt-15) Multiwatt-15 PIN CONNECTIONS (top view) Powerdip 14 + 3 + 3 L6115 (Multiwatt-15) L6114 (Powerdip) MULTIPOWER BCD TECHNOLOGY

Symbol Parameter Value Unit VDS Drain-source Voltage 100 V VCC Supply Voltage 60 V ID Continuous Drain Current @<0>T pins = 90 °C @<0>T case = 90 °C Powerdip Multiwatt –15 1.5 A A IDM (*) Pulsed Drain Current Powerdip Multiwatt –15 A A ISD Continuous Source-drain Diode Current @<0>T pins = 90 °C @<0>T case = 90 °C Powerdip Multiwatt –15 1.5 A A ISDM Pulsed Source Drain Diode Current Powerdip Multiwatt –15 A A VIN Input Voltage 7V VEN Enable Voltage 7V VS Source Voltage – 1 to + 4 V Ptot Total Power Dissipation @ T pins = 90 °C @ T case = 90 °C @ T amb = 70 °C @ T amb = 70 °C Powerdip Multiwatt –15 Powerdip Multiwatt –15 4.3 1.3 2.3 W W W W Tstg, Tj Storage and Junction Temperature Range – 40 to + 150 °C (*) Pulse width ≤ 300 µs, duty cycle ≤ 10 %. Note : ID , IDM , ISD , ISDM are given per channel. THERMAL DATA Symbol Parameter Powerdip Multiwatt–15 Unit R th j-pins Thermal Resistance Junction-pins Max. 14 - oC/W R th j-case Thermal Resistance Junction-case Max. - 3 oC/W R th j-amb Thermal Resistance Junction-ambient Max. 65 35 oC/W BLOCK DIAGRAM L6114 - L6115

ELECTRICAL CHARACTERISTICS (Tj = 25oC, VCC = 40V, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Supply Voltage 14 48 V ICC Supply Current All V IN = H VEN = Square Wave (200kHz, 50 % DC) 9m A IQ Quiescent Current V EN = L 2 3 mA BV DSS Drain Source Breakdown Voltage I D = 1mA, VEN = L 100 V IDSS Output Leakage Current V EN = L VDS = 100V VDS = 80V, Tj = 125°C1 mA R DS (on) (*) Static Drain-source on Resistance V CC ≥ 14V, ID = 1.5A VEN , VIN = H 0.7 Ω VIN L, VEN L Input Low Voltage – 0.3 0.8 V VIN H, VEN H Input High Voltage 2 7 V IIN L, IEN L Input Low Current V IN, VEN = L – 100 µA IIN H, IEN H Input High Current V IN, VEN = H 10 µA td (on) Turn on Delay Time ID = 1.5A See Test Circuit and Waveforms 300 ns tr Rise Time 100 ns td (off) Turn off Delay Time 400 ns tf Fall Time 100 ns VSD (*) Source Drain Diode Forward Voltage I SD = 1.5A, VEN = L 1.5 V VSD (on) (*) Source Drain Forward Voltage I SD = 1.5A - VIN, VEN = H 1.2 V (*) Pulse test : pulse width = 300 µs, duty cycle = 2 %. L6114 - L6115

POWERDIP20 PACKAGE MECHANICAL DATA DIM. mm inch a1 0.51 0.020 B 0.85 1.40 0.033 0.055 b 0.50 0.020 b1 0.38 0.50 0.015 0.020 D 24.80 0.976 E 8.80 0.346 e 2.54 0.100 e3 22.86 0.900 F 7.10 0.280 I 5.10 0.201 L 3.30 0.130 Z 1.27 0.050 L6114 - L6115

MULTIWATT15 PACKAGE MECHANICAL DATA DIM. mm inch A 5 0.197 B 2.65 0.104 C 1.6 0.063 D 1 0.039 E 0.49 0.55 0.019 0.022 F 0.66 0.75 0.026 0.030 H1 19.6 0.772 H2 20.2 0.795 L 22.1 22.6 0.870 0.890 L1 22 22.5 0.866 0.886 L2 17.65 18.1 0.695 0.713 L7 2.65 2.9 0.104 0.114 S 1.9 2.6 0.075 0.102 S1 1.9 2.6 0.075 0.102 Dia1 3.65 3.85 0.144 0.152 L6114 - L6115

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica- tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre- viously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved MULTIWATT® is a Registered Trademark of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. L6114 - L6115

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