L4202S THINKISEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
T C
ELECTRICAL CHARACTERISTICS
T =25°C unless otherwise specified C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V Maximum D.C. Reverse Voltage R 400 V V Maximum Repetitive Reverse Voltage RRM 400 V I Average Forward Current F(AV) T C 10 =110°C, Per Diode A T C 20 =110°C, Per Package A I RMS Forward Current F(RMS) T C 14 =110°C, Per Diode A I Non-Repetitive Surge Forward Current FSM T J 100 =45°C, t=10ms, 50Hz, Sine A P Power Dissipation D 83 W T Junction Temperature J -40 to +150 °C T Storage Temperature Range STG -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R Thermal Resistance θJC Junction-to-Case 1.5 °C /W Weight 6 g Symbol Parameter Test Conditions Min. Typ. Max. Unit I Reverse Leakage Current RM V R -- =400V -- 15 µA V R =400V, T J V Forward Voltage F I F -- =10A 1.00 -- V I F =10A, T J t Reverse Recovery Time rr I F =1A, V R =30V, di F -- /dt=-200A/μs 20 -- ns t Reverse Recovery Time rr V R =200V, I F =10A di F /dt=-200A/μs, T J =25°C 25 -- ns I Max. Reverse Recovery Current RRM -- 2.2 -- A t Reverse Recovery Time rr V R =200V, I F =10A di F /dt=-200A/μs, T J =125°C 46 -- ns I Max. Reverse Recovery Current RRM -- 5.5 -- A L4204S Pb Free Plating Product L4204S
20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode
- Ultrafast Recovery Time
- Soft Recovery Characteristics
- Low Recovery Loss
- Low Forward Voltage
- High Surge Current Capability
- Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE L4204S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. TO-247AD/TO-3P Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside Anode © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/3Rev.05
I F (A) V F （V） Fig1. Forward Voltage Drop vs Forward Current T J =125°C T J =25°C di F /dt（A/μs） Fig2. Reverse Recovery Time vs di F /dt 1000 800 600 400 200 0 0 t rr (ns) V R =200V T J =125°C I F =20A I F =5A I F =10A I RRM (A) di F /dt（A/μs） Fig3. Reverse Recovery Current vs di F /dt 0 200 400 600 800 1000 di F /dt（A/μs） Fig4. Reverse Recovery Charge vs di F /dt 1000 800 600 400 200 0 0 Q rr (nc) 100 150 200 V R =200V T J =125°C I F =20A I F =5A I F =10A V R =200V T J =125°C I F =20A I F =10A I F =5A K f 0.2 0.4 1.2 0.6 Z thJC (K/W) 0.8 I RRM Q rr t rr T J (°C) Fig5. Dynamic Parameters vs Junction Temperature 0 25 50 100 150 1 10 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance 75 125 0.75 250 Duty 0.5 0.2 0.1 0.05 Single Pulse L4204S © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/3Rev.05
Fig7. Diode Reverse Recovery Test Circuit and Waveform I F dI F /dt t rr I RRM Q rr 0.25 I RRM 0.9 I RRM L4204S © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 3/3Rev.05 Dimensions in Millimeters Fig8. Package Outline