L4148 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com L4148 FAST SWITCHING DIODES SILICON EPITAXIAL PLANAR SWITCHING DIODE REV1.3 - AUG 2011 RELEASED, MAR 2019 UPDATED - - 1 - DESCRIPTION FEATURES The L4148 is available in LL-34 Package For automatic surface mounting Available in LL-34 Package
ORDERING INFORMATION
Note SPQ: 2,500pcs/Reel AiT provides all RoHS Compliant Products Rectification Efficiency Measurement Circuit
AiT Semiconductor Inc. www.ait-ic.com L4148 FAST SWITCHING DIODES SILICON EPITAXIAL PLANAR SWITCHING DIODE REV1.3 - AUG 2011 RELEASED, MAR 2019 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS TA = 25°C VRM, Peak Reverse Voltage 100V VR, Reverse Voltage 75V IF(AV), Average Rectified Forward Current 200mA IFSM, Non-Repetitive Peak Forward Surge Current at t=1s at t=1ms at t=1μs 0.5A 1.0A 4.0A PTOT, Power Dissipation 500mW TJ, Junction Temperature 175℃ TSTG, Storage Temperature Range -65℃ ~ +175℃ Valid Provided that Electrodes are kept at ambient temperature Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute m aximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = 25 °C Parameter Symbol Conditions Min. Max. Unit Forward Voltage VF IF=10mA - 1 V Leakage Current IR VR=20V 25 nA VR=75V 5 μA VR=20V, TJ=150℃ 50 μA Reverse Breakdown Voltage tested with 100uA Pulses V(BR)R 100 - V Capacitance CTOT VR=0V, f=1MHZ - 4 pF Voltage Rise when Switching on tested with 50mA Forward Pulses VFR tp= 0.1s, Rise Time<30ns, fp=5 to 100KHz - 2.5 V Reverse Recovery Time trr IF= 10mA to IR=1mA VR=6V, RL=100Ω - 4 nS Thermal Resistance Junction to Ambient Air RthA 0.35 NOTE1 K/mW Rectification Efficiency ηV F=100MHz, VRF=2V 0.45 - - NOTE1: Valid provided that Electrodes are kept at ambient temperature
AiT Semiconductor Inc. www.ait-ic.com L4148 FAST SWITCHING DIODES SILICON EPITAXIAL PLANAR SWITCHING DIODE REV1.3 - AUG 2011 RELEASED, MAR 2019 UPDATED - - 5 -
PACKAGE INFORMATION
Dimension in LL-34 Package (Unit: mm) Glass Case MiniMELF
AiT Semiconductor Inc. www.ait-ic.com L4148 FAST SWITCHING DIODES SILICON EPITAXIAL PLANAR SWITCHING DIODE REV1.3 - AUG 2011 RELEASED, MAR 2019 UPDATED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reser ves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.