L1N60Z

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• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage VDSS 600 V Continuous Drain Current R/C0113JC Steady State, TC = 25°C (Note 1) ID 0.8 0.3 A Continuous Drain Current R/C0113JC Steady State, TC = 100°C (Note 1) ID 0.5 0.15 A Pulsed Drain Current, tp = 10 /C0109s IDM 3.2 1.0 A Power Dissipation – R/C0113JC Steady State, TC = 25°C PD 25 3 W Gate−to−Source Voltage VGS ±30 V Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.0 A) EAS 60 mJ Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns Source Current (Body Diode) IS 0.5 0.3 A Lead Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. I S = 1.5 A, di/dt ≤ 100 A//C0109s, VDD ≤ BVDSS THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) NDDL1N60Z R/C0113JC 5 °C/W Junction−to−Ambient (Note 4) NDDL1N60Z (Note 3) NDDL1N60Z−1 (Note 4) NDTL1N60Z (Note 5) NDTL1N60Z R/C0113JA 50 151 °C/W 3. Insertion mounted. 4. Surface −mounted on FR4 board using 1” sq. pad size (Cu area = 1.127” sq. [2 oz] including traces). 5. Surface −mounted on FR4 board using minimum recommended pad size (Cu area = 0.026” sq. [2 oz]). This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

V(BR)DSS RDS(ON) MAX

600 V 15 /C0087 @ 10 V

N−Channel MOSFET MARKING DIAGRAMS Y = Year WW = Work Week G = Pb −Free Package Drain Drain Gate Source YWW N60ZG Gate Drain 3 Source DrainYWW N60ZG A = Assembly Location Y = Year W = Work Week 01N60 = Specific Device Code /C0071 = Pb−Free Package AYW L1N60Z/C0071 /C0071 (*Note: Microdot may be in either location) SOT−223 CASE 318E STYLE 31 2 3 Drain Gate Source Drain G (1) D (2) S (3)

NDDL1N60Z, NDTL1N60Z http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS =0V , ID =1m A 600 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 1 mA 660 mV/°C Drain−to−Source Leakage Current IDSS VDS = 600 V, VGS =0V TJ =2 5°C 1 /C0109A TJ = 125°C 50 Gate−to−Source Leakage Current IGSS VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) VDS =V GS, ID =5 0 /C0109A 3 3.75 4.5 V Negative Threshold Temperature Coef- ficient VGS(TH)/TJ 7.0 mV/°C Static Drain-to-Source On Resistance RDS(on) VGS =1 0V , ID = 0.2 A 13 15 /C0087 Forward Transconductance gFS VDS =1 5V , ID = 0.2 A 0.5 S CHARGES, CAPACITANCES & GATE RESISTANCES Input Capacitance (Note 7) Ciss VDS =2 5V , VGS = 0 V, f = 1 MHz 94 pF Output Capacitance (Note 7) Coss 18 Reverse Transfer Capacitance (Note 7) Crss 3 Total Gate Charge (Note 7) Qg VDS = 300 V, ID = 0.4 A, VGS =1 0V 5 nC Gate-to-Source Charge (Note 7) Qgs 1 Gate-to-Drain Charge (Note 7) Qgd 3 Plateau Voltage VGP 6 V Gate Resistance Rg TBD /C0087 SWITCHING CHARACTERISTICS (Note 8) Turn-on Delay Time td(on) VDD = 300 V, ID = 0.4 A, VGS =1 0V , RG = 0 /C0087 6 ns Rise Time tr 5 Turn-off Delay Time td(off) 13 Fall Time tf 25 DRAIN−SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD IS = 0.4 A, VGS =0V TJ =2 5°C 0.8 1.6 V TJ = 125°C 0.6 Reverse Recovery Time trr VGS =0V , VDD =3 0V IS = 0.8 A, di/dt = 100 A//C0109s 140 ns Charge Time ta 25 Discharge Time tb 115 Reverse Recovery Charge Qrr 220 nC 6. Pulse Width ≤ 300 /C0109s, Duty Cycle ≤ 2%. 7. Guaranteed by design. 8. Switching characteristics are independent of operating junction temperatures. Device Package Shipping† NDDL1N60Z−1G IPAK (Pb-Free, Halogen-Free)

75 Units / Rail

(Pb-Free, Halogen-Free) 2500 / Tape & Reel NDTL1N60ZT1G SOT−223 (Pb-Free, Halogen-Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

NDDL1N60Z, NDTL1N60Z http://onsemi.com PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D E b e 12 3 0.08 (0003) A C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 1.5 0.059 /C0466mm inches/C0467SCALE 6:1 3.8 0.15 2.0 0.079 6.3 0.2482.3 0.091 2.3 0.091 2.0 0.079 SOLDERING FOOTPRINT HE DIM A MIN NOM MAX MIN MILLIMETERS 1.50 1.63 1.75 0.060 INCHES A1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 D 6.30 6.50 6.70 0.249 E 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 NOM MAX L1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 HE − − 0° 10° 0° 10° /C0113 /C0113 L STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

NDDL1N60Z, NDTL1N60Z http://onsemi.com PACKAGE DIMENSIONS 123 V S A K −T− SEATING PLANE R B F G D 3 PL M0.13 (0.005) T C E J H DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.090 BSC 2.29 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Z IPAK CASE 369D ISSUE C STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

NDDL1N60Z, NDTL1N60Z http://onsemi.com PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D b D E e M0.005 (0.13) C A c C Z DIM MIN MAX MIN MAX MILLIMETERSINCHES D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 A 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 BSC 2.29 BSC b3 0.180 0.215 4.57 5.46 L 0.055 0.070 1.40 1.78 L3 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY . 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.12 3 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 /C0466mm inches/C0467SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* H 0.370 0.410 9.40 10.41 A1 0.000 0.005 0.00 0.13 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC HDETAIL A SEATING PLANE A B C L H L2 GAUGE PLANE DETAIL A ROTATED 90 CW/C0053 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a numb er of patents, trademarks, reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 NDDL1N60Z/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative