MLD1N06CL ONSEMI | Alldatasheet

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Features

  • Pb−Free Package is Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS Clamped Vdc Drain−to−Gate Voltage (RGS = 1.0 M/C0087) VDGR Clamped Vdc Gate−to−Source Voltage − Continuous VGS ±10 Vdc Drain Current − Continuous − Single Pulse ID IDM Self−limited 1.8 Adc Apk Total Power Dissipation PD 40 W Operating and Storage Temperature Range TJ, Tstg −50 to 150 °C Electrostatic Discharge Voltage (Human Model) ESD 2.0 kV THERMAL CHARACTERISTICS Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) R/C0113JC R/C0113JA R/C0113JA 3.12 100 71.4 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR−4 board using the minimum recommended pad size. Device Package Shipping †

ORDERING INFORMATION

MLD1N06CLT4 DPAK 2500 Tape & Reel CASE 369C DPAK STYLE 2 N−Channel MARKING DIAGRAM Y = Year WW = Work Week L1N06C = Device Code G = Pb−Free Package Preferred devices are recommended choices for future use and best overall value. D G S http://onsemi.com

62 V (Clamped) 750 m/C0087

RDS(on) TYP 1.0 A ID MAXV(BR)DSS 1 2 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. YWW L1N 06CG MLD1N06CLT4G DPAK (Pb−Free)

2500 Tape & Reel

http://onsemi.com UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS Rating Symbol Value Unit Single Pulse Drain−to−Source Avalanche Energy Starting T J = 25°C EAS 80 mJ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Internally Clamped) (ID = 20 mAdc, VGS = 0 Vdc) (ID = 20 mAdc, VGS = 0 Vdc, TJ = 150°C) V(BR)DSS Vdc Zero Gate Voltage Drain Current (VDS = 45 Vdc, VGS = 0 Vdc) (VDS = 45 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS 0.6 6.0 5.0 /C0109Adc Gate−Source Leakage Current (VG = 5.0 Vdc, VDS = 0 Vdc) (VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150°C) IGSS 0.5 1.0 5.0 /C0109Adc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (ID = 250 /C0109Adc, VDS = VGS) (ID = 250 /C0109Adc, VDS = VGS, TJ = 150°C) VGS(th) 1.0 0.6 1.5 2.0 1.6 Vdc Static Drain−to−Source On−Resistance (ID = 1.0 Adc, VGS = 4.0 Vdc) (ID = 1.0 Adc, VGS = 5.0 Vdc) (ID = 1.0 Adc, VGS = 4.0 Vdc, TJ = 150°C) (ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150°C) RDS(on) 0.63 0.59 1.1 1.0 0.75 0.75 1.9 1.8 /C0087 Static Source−to−Drain Diode Voltage (IS = 1.0 Adc, VGS = 0 Vdc) VSD − 1.1 1.5 Vdc Static Drain Current Limit (VGS = 5.0 Vdc, VDS = 10 Vdc) (VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150°C) ID(lim) 2.0 1.1 2.3 1.3 2.75 1.8 Adc Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc) gFS 1.0 1.4 − mhos RESISTIVE SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time (VDD = 25 Vdc, ID = 1.0 Adc, VGS(on) = 5.0 Vdc, RGS = 50 /C0087) td(on) − 1.2 2.0 ns Rise Time tr − 4.0 6.0 Turn−Off Delay Time td(off) − 4.0 6.0 Fall Time tf − 3.0 5.0 INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from drain lead 0.25″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS − 7.5 − nH 3. Pulse Test: Pulse Width ≤ 300 /C0109s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature.

Figure 1. Output Characteristics Figure 2. Transfer Function

10 V 8 V

on−resistance, high voltage and high current. a high in−rush current or a shorted load condition could occur. its initial junction temperatu re, and the supply voltage. rated operating temperature in only a few milliseconds. from about 2.3 A at 25°C to about 1.3 A at 150°C. temperature to a maximum of 150°C. MOSFET due to the lower temperature coefficient of R2. voltages of 4 and 5 V is shown in Figure 5. source provide ESD protection to greater than 2 kV , HBM.

http://onsemi.com PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O D A K B RV S F L G 2 PL M0.13 (0.005) T E C U J H −T− SEATING PLANE Z DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 123 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 /C0466mm inches/C0467SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 MLD1N06CL/D SMARTDISCRETES is a trademark of Semiconductor Components Industries, LLC (SCILLC). LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.