L14Q1 QT | Alldatasheet
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OPTOELECTRONICS PHOTOTRANSISTOR ST Qi PACKAGE DIMENSIONS DESCRIPTION EL The L14Q1 is a silicon phototransister encapsulated is a i ao clear, wide angle, sidelooker package. et Red =s ¢—Color by a) 6 Coded: + SECTION x-X & LEAD PROFILE Ts i 1 ‘SEATING T PLANE = Good optical to mechanical alignment x{]x = Mechanically and wavelength matched to the FSF LED t = Plastic package with a color stripe for easy recognition Lf from LED e a 12 st1335 SEO. an. [AK [HAN [ MAK | [wo [760 T 75 | oe [030 [1 | [b {51 [wom [020 [nom [1 | [po [ 44s [470 [17s [tas [| ee [eT sel se [oes [oor || [~e J 241 [267 [095 | 10s | 3 | [a [198 [nom [ove [Nom [| [1 [rer [ — [soo f — J | [Tao [res [055 [06s [| coo { i H H H H ¥ | ' i H ' on T1608 NOTES: 1. TWO LEADS. LEAD CROSS SECTION DIMENSIONS UNCONTROLLED WITHIN 1.27mm (.050") OF ‘SEATING PLANE. 2. CENTERLINE OF ACTIVE ELEMENT LOCATED WITHIN .25mm (.010") OF TRUE POSITION. 3. AS MEASURED AT THE SEATING PLANE. 4. INCH DIMENSIONS DERIVED FROM MILLIMETERS. 3418E
OPTOELECTRONICS PHOTOTRANSISTOR SEE el ABSOLUTE MAXIMUM RATINGS (, = 25°C Unless Otherwise Specified) Soldering: ELECTRICAL CHARACTERISTICS (1, = 25°C Unless Otherwise Specified) (All measurements made under pulse conditions.) Collector-Emitter Breakdown BV ceo 30 - v |, = 10 mA, Ee=0 Emitter-Collector Breakdown BVeco 6.0 _ Vv i = 100 pA, Ee = 0 Collector-Emitter Leakage leo — 100 nA Vor = 25 V, Ee = 0 Reception Angle at / Sensitivity iJ +35 Degrees On-State Collector Current leow 1.0 — mA Ee = 1.5 mWicm’, Vc = SV" Turn-On Time ee 8 us 1 = 30 MA, Voc = 5V,R. = 2.5K Turn-Off Time ber 50 2s le = 30 MA, Vec = SV, Ru = 2.5 KO Saturation Voltage Voesan, = 0.40 Vv |, = .6 mA, Ee = .60 mW/cm**" 1. Derate power dissipation linearly 2.00mW/°C above 25°C ambient. 2. RMA flux is recommended. 3. Methanol or Isopropyl! alcohols are recommended as cleaning agents. 4. Soldering iron tip 4s” (1.6 mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 7. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cn? is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/crr’.
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