L14P1 QT | Alldatasheet
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OPTOELECTRONICS PHOTOTRANSISTOR SS PACKAGE DIMENSIONS DESCRIPTION go— The L14P series is a silicon phototransister mounted in a be $01 | 4 narrow angle, TO-18 package. — e 2y (fe ig ~ Ag< LIN, h wo Nb a {? i $ j 7 rox L | “« a orto of L rosa |_FEATURES = Hermetically sealed package ee Be = Narrow reception angle [ @b [ore [021 [407 | 593 [| ™ Devices can be used as a photodiode by wiring the Lage a tees Peet collector and base leads. [| toonow |“ 2sanom [2] [a | osowom [127 wom [2] a ec | [1 Te Tone | 30 [16 || [kT oes [ove [71 120 |_| [TY s00 = Ter = J | Tas Ta Pas ae | (COLLECTOR CONNECTED TO CASE) cis) wo) T1607 en NOTES: 1, MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021” (.533mm) MEASURED IN GAUGING PLANE .054” + 001” - .000 (137 + .025 — .000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007” (778mm) THEIR TRUE POSITION RELATIVE TO. MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB.
QT! HERMETIC SILICON OPTOELECTRONICS PHOTOTRANSISTOR NEE Soldering: Collector-Emitter Breakdown Voltage becceeecceeeeeeeeeeeeeees boveeeeeeeeeeeees 80-Volts ELECTRICAL CHARACTERISTICS (r, = 25°C Uniess Otherwise Specified) (All measurements made under pulse conditions.) 2. Derate power dissipation linearly 6.00mW/°C above 25°C case. (3. RMA flux is recommended. 4. Methanol or Isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 46" (1.6 mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mWicrr* is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cnr.
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