L14N QT | Alldatasheet
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OPTOELECTRONICS PHOTOTRANSISTOR SS PACKAGE DIMENSIONS DESCRIPTION ° The L14N series is a silicon phototransister mounted in a b—¢o e wide angle, TO-18 package. f- #4 5 (A s a a I ° 4 z | n 4 = NS i jt ||P SON L a oti ~~ ‘ST1336 = Hermetically sealed package. mason nares [in [wax [iT MAX. | ™ Narrow reception angle. [a | — [a [saat 3 i [ap [ore [oat | 006 | saa |_| ™ Device can be used as a photodiode by using the [wo | 209 [230 [530 [sas [| collector and base leads. [e | soonom [2sanom [2 | [e. {osonom [t27nom {2 | [| — [Toso [ — Te [| a | [kJ 026 [04s [71 [ze Ts | [ a {soo | — [a7 fT La [ase [ase [ass [ass [3] (COLLECTOR CONNECTED TO CASE) co stisos EO NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021” (.533mm) MEASURED IN GAUGING PLANE .054” + .001” — .000 (137 + .025 — .000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007” (.778mm) THEIR TRUE POSITION RELATIVE TO MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB.
OPTOELECTRONICS PHOTOTRANSISTOR Cae mmm ABSOLUTE MAXIMUM RATINGS (7, = 25°C Unless Otherwise Specified) Soldering: Lead Temperature (Flow) boob be bebeteeteeeeeeeteeseestssiseeseresesss 260°C for 10 sec.04# Collector-Emitter Breakdown Voltage IEC R/0)/ (1 Collector-Base Breakdown Voltage eee eeneeeneneteececerececcssccetereretesereteseses 40 VORS: Power Dissipation (T, = 25°C) . veceeee ceeeeeeeeeteeeeeeeeeeeeeeeeeses 300 MW® ELECTRICAL CHARACTERISTICS (1, = 25°C Unless Otherwise Specified) (All measurements made under pulse conditions.) Collector-Emitter Breakdown BVceo 30 baad Vv ic = 10mA, Ee =0 Emitter-Base Breakdown BV exo 5 = Vv le = 100 pA, Ee=0 Collector-Base Breakdown BVce0 40 _ Vv Ic = 100 pA, Ee = 0 Collector-Base Leakage i) - 25 nA Vos = 25V, Ee =0 Reception Angle at ’ Sensitivity 8 £40 Degrees On-State Collector Current L14N1 Tejon 3.0 - mA Ee = 1.5mWicm’, Va = 5V"" On-State Collector Current L14N2 Tejonw 6.0 mA Ee = 1.5mWicm’, Vo = 5V"" ‘On-State Photodiode Current Nesom 5.0 uA Ee = 1.5mWicm’, Vis = 5V Rise Time t 14 us le = 10 MA, Vec = 5 V, R. = 1002 Fall Time t 16 us le = 10 MA, Vec = 5V, R= 1002 Saturation Voltage L14N1 Vesisan _ 0.40 v Ic = 0.8 mA, Ee = 3.0 mWicm*"* Saturation Voltage L14N2 Vezisan — 0.40 Vv I. = 1.6 mA, Ee = 3.0 mWicm*"* 1. Derate power dissipation linearly 3.00mW/*C above 25°C ambient. 2. Derate power dissipation linearly 6.00mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or Isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 4s” (1.6 mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/crr is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/crr’.
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