L14G1 QT | Alldatasheet
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OPTOELECTRONICS PHOTOTRANSISTOR ee bp The L14G series is a silicon phototransister mounted in a go pl oI e narrow angle, TO-18 package. r ba | e J | > G g Ag 2 h w wz ss |? se = rx L a a wrt 4 ‘$T1333 roc BS PETES ors = Hermetically sealed package [afore [oa aor saa [| [eo ato [a0 sor [sent —| (90. }i7e[19s- [ase Pass [| [~e-joonou | 2sanow [2 | [2 osonou—[-127 vow [2 | a [pase fee te | [i Foes Powe or ize | a ce er (COLLECTOR CONNECTED TO CASE) cs) srisos EC) NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021” (.533mm) MEASURED IN GAUGING PLANE .054” + .001” — .000 (137 + .025 — .000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007” (.778mm) THEIR TRUE POSITION RELATIVE TO. MAXIMUM WIDTH TAB. 3, FROM CENTERLINE TAB.
OPTOELECTRONICS PHOTOTRANSISTOR ABSOLUTE MAXIMUM RATINGS (7, = 25°C Uniess Otherwise Specified) Soldering: Lead Temperature (Iron) sccccccccee errr ++. 240°C for 5 sec.°*59 Lead Temperature (FIOW) 0.006. .ooeeeeeeeeeeeeeeteeeeetetrtettetsseesssses 260°C for 10 sec.0*8 Collector-Base Breakdown Voltage .... fee ee eee eeeeeteetetteteteeeeeeeeeeeeeeees 45 Volts ELECTRICAL CHARACTERISTICS (1, = 25°C Uniess Otherwise Specified) (All measurements made under pulse conditions.) Collector-Emitter Breakdown BV cco 45 _- Vv I, = 10mA, Ee =0 Emitter-Base Breakdown BV ino. 5.0 —_ v | = 100 nA, Ee =0 Collector-Base Breakdown BV cao, 45 _ Vv \\c = 100 pA, Ee = 0 Collector-Emitter Leakage heeo ad 100 nA Vor = 10V, Ee =0 Reception Angle at % Sensitivity 8 +10 Degrees On-State Collector Current L14G1 Teron 6.0 = mA Ee = 3.0 mWicm?, Vee = 5 V"" On-State Collector Current L14G2 leone 3.0 = mA Ee = 3.0 mWicm*, Ve = 5 V"" On-State Collector Current L14G3 Legon 12.0 bead mA Ee = 3.0 mWicm*, Va = 5 V"" Turn-On Time ty 8 us Ic = 2MA, Veo = 10 V, R. = 1002. Turn-Off Time tor 7 2S Ic = 2MA, Voc = 10 V, R, = 1002 Saturation Voltage Veeisany _ 0.40 Vv |, = 1.0 mA, Ee = 3.0 mWicm*"" 1. Derate power dissipation linearly 3.00mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or Isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip Ye" (1.6 mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cnr’ is approximately equivalent to a tungsten source, at 2870°K of 10 mW/crr*.
OPTOELECTRONICS PHOTOTRANSISTOR ee 10) ». as So ARE = } FR SSS ea SHEE OO eter TT) ae iy pCCo ee PL Os eee a ce en es ee ee ones FOL eo eee bE HH At = HH LLU ATU Png — y g Po senront i mal Ce Co FA ED /enmaey ll § oy fi > —t tt ee a prea en |// ani ies YEE Sonn . Sat Aetna iin ot | CC 4 ant [I aa 2° rr re SSS ee SENSES CT
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a. Z| Bo a a Se ee ee FAS oe oe eS HI a de cn i ee Ht A ec ° Es 30 75, 700 1 0 a a | Both Emitter (LED558) and Detector (L14G) at Same Temperature