L14F1 FAIRCHILD | Alldatasheet
Document overview
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Technical content
0.038 (0.97) 0.100 (2.54) 0.050 (1.27) 45° 0.046 (1.16) 0.036 (0.92) 0.030 (0.76) NOM 0.195 (4.95) 0.178 (4.52) 0.230 (5.84) 0.209 (5.31) 0.500 (12.7) MIN 0.255 (6.47) 0.225 (5.71) Ø0.020 (0.51) 3X PACKAGE DIMENSIONS
FEATURES
- Hermetically sealed package
- Narrow reception angle NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
DESCRIPTION
The L14F1/L14F2 are silicon photodarlingtons mounted in a narrow angle, TO-18 package. 2001 Fairchild Semiconductor Corporation DS300306 6/01/01 1 OF 4 www.fairchildsemi.com EMITTER (CONNECTED TO CASE) COLLECTOR BASE 2 SCHEMATIC HERMETIC SILICON PHOTODARLINGTON L14F1 L14F2
www.fairchildsemi.com 2 OF 4 6/01/01 DS300306 PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Collector-Emitter Breakdown I C = 10 mA, Ee = 0 BV CEO 25 — V Emitter-Base Breakdown I E = 100 µA, Ee = 0 BV EBO 12 — V Collector-Base Breakdown I C = 100 µA, Ee = 0 BV CBO 25 — V Collector-Emitter Leakage V CE = 12 V, Ee = 0 I CEO — 100 nA Reception Angle at 1/2 Sensitivity θ ±8 Degrees On-State Collector Current L14F1 Ee = .125 mW/cm2, VCE = 5 V(7) IC(ON) 7.5 — mA On-State Collector Current L14F2 Ee = .125 mW/cm2, VCE = 5 V(7) IC(ON) 2.5 mA Rise Time IC = 10 mA, VCC = 5 V, RL =100 Ω tr 300 µs Fall Time IC = 10 mA, VCC = 5 V, RL =100 Ω tf 250 µs ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions) Parameter Symbol Rating Unit Operating Temperature T OPR -65 to +125 °C Storage Temperature T STG -65 to +150 °C Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C Collector to Emitter Breakdown Voltage VCEO 25 V Collector to Base Breakdown Voltage V CBO 25 V Emitter to Base Breakdwon Voltage V EBO 12 V Power Dissipation (TA = 25°C)(1) PD 300 mW Power Dissipation (TC = 25°C)(2) PD 600 mW ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16”(1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 0.05 mW/cm 2 is approximately equivalent to a tungsten source, at 2870°K, of 0.2 mW/cm2. L14F1 L14F2 HERMETIC SILICON PHOTODARLINGTON
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS300306 6/01/01 4 OF 4 www.fairchildsemi.com L14F1 L14F2 HERMETIC SILICON PHOTODARLINGTON