L14C1 QT | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
MPIOCLECTAOHICS PHOTOTRANSISTOR eee? PACKAGE DIMENSIONS DESCRIPTION go e The L14C series is a silicon phototransistor mounted in a | 4 you wide angle, TO-18 package. f-# % (AN | | a | t : \\ Ag ; h we i j {? k li tT t a ot q a — ‘ST1336 ™ Hermetically sealed package [semao. | Nores | [ MILLIMETERS | | win. [ MAx. | MIN. T MAX. | = Wide reception angle [a | — [20] — Tsaa | [ep Tore | 021 | 406 | 504 [] [eT toonom. “T254nom. [2] [eT os0nom. | 1.27Nom. [2] [+ TT 030 [ — Tze | re | [a [soo | — [rer TT Loa [ase [ass [as Tass [3] (COLLECTOR CONNECTED TO CASE) ct od. ) eros Ye) NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021" (533mm) MEASURED IN GAUGING PLANE .054” + .001" — .000 (137 + 025 — 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007” (.778mm) THEIR TRUE POSITION RELATIVE TO. MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB,
QT | HERMETIC SILICON OPTOELECTRONICS PHOTOTRANSISTOR EE ABSOLUTE MAXIMUM RATINGS (, = 25°C Uniess Otherwise Specified) Soldering: Lead Temperature (Iron) cosets ee eee ee eteeeeteeseeesessseserseveress 240°C for 5 sec.2459 Power Dissipation (T; = 25°C) a aaacccccecs RINE «00000011 a ELECTRICAL CHARACTERISTICS (7, = 25°C Unless Otherwise Specified) (All measurements made under pulse conditions.) Collector-Emitter Breakdown: BVceo 50 = v |, = 10 mA, Ee = 0 Emitter-Base Breakdown BV exo 7.0 _ Vv |, = 100uA, Ee = 0 Collector-Base Breakdown BV ceo 50 _ Vv |. = 100uA, Ee = 0 Collector-Emitter Leakage Neco _ 100 nA Vee = 20V, Ee = 0 Reception Angle at Sensitivity 0 +40 Degrees On-State Collector Current L14C1 Neon 1.0 - mA Ee = 3.0 mWicm*, Va = 5 V7" On-State Collector Current L14C2 leom 05 _— mA Ee = 3.0 mWicm’, Ve = 5 V"" On-State Collector Current L14C2 Neon 1.0 - mA Ee = 6.0 mWicm’, Vo = 5V"" Turn-On Time te 5 us I, = 2 MA, Voc = 10 V, R, = 1002 Turn-Off Time be 5 2s I, = 2MA, Vec = 10 V, R, = 1002. Saturation Voltage Veessan = 0.40 Vv |; = 0.40 mA, Ee = 6.0 mW/em?”* 1. Derate power dissipation linearly 3.00mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or Isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip “4s” (1.6 mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mWicrr’ is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cr*.
DPTOELECTRONICS PHOTOTRANSISTOR eS a a . rs a » EP Pity py rr
3 CT es LT Tit Tita
Se eer) JO ee 8 ze tt 3 ity io ee a eer e vac terete Hed UVa) PeLL ee es os os ST ew a 0 oon oe ae oa ++-+4+—+—_ 4} 2) = ee ee ee es ana
72 SC OS ¢
i. Hee Hh i po a A/a 8 eet ttt p++ bf Per oo BNA TE TTT To Po ARS HEE z BE nommanied 1 mS 2 ol ee ee ee ete a
5 Ry +1000
005 28 CUS 100 725 0 BO 10 0 100 to A = 7s —— FX SEAR EN t NOEL ETAT cod a ' [— eo Fy a a y Ntsc = Ho pt—t-y a Perr Bos | a a 1 ZN SEER EEE SEE z [\\ | £40 i bos | ON gee a dos ae a | PY SEY \\ arr) 00 Foo B00 300 700d 700 “90-60-40 endidiemed +60 +80 Fig. 5. Spectral Response STIO64 Fig. 6. Angular Response Curve ST1088