L14C1 FAIRCHILD | Alldatasheet

Document overview

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Technical content

0.038 (.97) NOM 45° 0.046 (1.16) 0.036 (0.92) 0.030 (0.76) MAX 0.195 (4.96) 0.178 (4.52) 0.230 (5.84) 0.209 (5.31) 0.500 (12.7) MIN Ø0.021 (0.53) 3X 0.210 (5.34) MAX 0.100 (2.54) PACKAGE DIMENSIONS

FEATURES

  • Hermetically sealed package
  • Wide reception angle NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.

DESCRIPTION

The L14C1/L14C2 are silicon phototransistors mounted in a wide angle, TO-18 package.  2001 Fairchild Semiconductor Corporation DS300305 6/01/01 1 OF 4 www.fairchildsemi.com EMITTER (CONNECTED TO CASE) COLLECTOR BASE 2 SCHEMATIC HERMETIC SILICON PHOTOTRANSISTOR L14C1 L14C2

www.fairchildsemi.com 2 OF 4 6/01/01 DS300305 Parameter Symbol Rating Unit Operating Temperature T OPR -65 to +125 °C Storage Temperature T STG -65 to +150 °C Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C Collector to Emitter Breakdown Voltage VCEO 50 V Collector to Base Breakdown Voltage V CBO 50 V Emitter to Base Breakdwon Voltage V EBO 7V Power Dissipation (TA = 25°C)(1) PD 300 mW Power Dissipation (TC = 25°C)(2) PD 600 mW ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Collector-Emitter Breakdown I C = 10 mA, Ee = 0 BV CEO 50 — V Emitter-Base Breakdown I E = 100 µA, Ee = 0 BV EBO 7.0 — V Collector-Base Breakdown I C = 100 µA, Ee = 0 BV CBO 50 — V Collector-Emitter Leakage V CE = 20 V, Ee = 0 I CEO — 100 nA Reception Angle at 1/2 Sensitivity θ ±40 Degrees On-State Collector Current L14C1 Ee = 0.5 mW/cm2, VCE = 5 V(7,8) IC(ON) .16 — mA On-State Collector Current L14C2 Ee = 0.5 mW/cm2, VCE = 5 V(7,8) IC(ON) .08 — mA On-State Collector Current L14C2 Ee = 1.0 mW/cm2, VCE = 5 V(7,8) IC(ON) .16 — mA Turn-On Time IC = 2 mA, VCC = 10 V, RL =100 Ω ton 5 µs Turn-Off Time IC = 2 mA, VCC = 10 V, RL =100 Ω toff 5 µs Saturation Voltage IC = 0.40 mA, Ee = 6.0 mW/cm2(7,8) VCE(SAT) — 0.40 V ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions) NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16”(1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm 2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2. HERMETIC SILICON PHOTOTRANSISTOR L14C1 L14C2

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 4 OF 4 6/01/01 DS300305 HERMETIC SILICON PHOTOTRANSISTOR L14C1 L14C2