KU034N08P KEC | Alldatasheet
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- 5. 14 1/7 SEMICONDUCTOR TECHNICAL DATA KU034N08P N-ch Trench MOS FET Revision No : 0 General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered
applications
FEATURES
hVDSS= 75V, ID= 170A hDrain-Source ON Resistance : RDS(ON)=3.4mʃ(Max.) @VGS = 10V MAXIMUM RATING (Tc=25) * : Drain current limited by maximum junction temperature. Calculated continuous Current based on maximum allowable junction temperature CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 75 V Gate-Source Voltage VGSS 20 V Drain Current @TC=25 ID 170* A@TC=100 106 Pulsed (Note1) IDP 424* Single Pulsed Avalanche Energy (Note 2) EAS 1,000 mJ Repetitive Avalanche Energy (Note 1) EAR 19 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25 PD 192 W Derate above 25 1.54 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 ~ 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.65 /W Thermal Resistance, Junction-to-Ambient RthJA 62.5 /W PIN CONNECTION K
- 5. 14 2/7 KU034N08P Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250ǺA, VGS=0V 75 - - V Breakdown Voltage Temperature Coefficient ǚBVDSS/ǚTj ID=5mA, Referenced to 25 - 0.07 - V/ Drain Cut-off Current IDSS VDS=75V, VGS=0V, - - 10 uA Gate Threshold Voltage Vth VDS=VGS, ID=250ǺA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=80A - 3.0 3.4 mʃ Dynamic Total Gate Charge Qg VDS=60V, ID=80A VGS=10V (Note4,5) - 185 - nCGate-Source Charge Qgs - 45 - Gate-Drain Charge Qgd - 60 - Turn-on Delay time td(on) VDD=37V ID=80A RG=25ʃ (Note4,5) - 160 - ns Turn-on Rise time tr - 250 - Turn-off Delay time td(off) - 550 - Turn-off Fall time tf - 230 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 10,900 - pFOutput Capacitance Coss - 1,150 - Reverse Transfer Capacitance Crss - 470 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 137 A Pulsed Source Current ISP - - 548 Diode Forward Voltage VSD IS=80A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=80A, VGS=0V, dIs/dt=300A/Ǻs - 75 - ns Reverse Recovery Charge Qrr - 0.5 - uC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =100uH, IS=100A, VDD=60V, RG=25ʃ, Starting Tj=25. Note 3) IS80A, dI/dt200A/ɫ, VDDBVDSS, Starting Tj=25. Note 4) Pulse Test : Pulse width 300ɫ, Duty Cycle 2%. Note 5) Essentially independent of operating temperature. Marking
- 5. 14 3/7 KU034N08P Revision No : 0 100 C 25 C VDS = 2V
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