KTX301E KEC | Alldatasheet
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Technical content
- 1. 24 1/2 SEMICONDUCTOR TECHNICAL DATA KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE Revision No : 1 GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
ᴌIncluding two(TR, Diode) devices in TESV. (Thin Extreme Super mini type with 5pin.) ᴌSimplify circuit design. ᴌReduce a quantity of parts and manufacturing process. DIM MILLIMETERS A C TESV 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 B D H J B D A CC J H P P 1. D ANODE 2. Q EMITTER 3. Q BASE 4. Q COLLECTOR 5. D CATHODE MAXIMUM RATINGS (Ta=25ᴱ) EQUIVALENT CIRCUIT (TOP VIEW) D1 Q1 MARK SPEC C Type Name h RankFE 123 Marking Type KTX301E KTX301E Q1 hFE Rank : Y Q1 hFE Rank : GR Mark CA CB TRANSISTOR Q1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 Ὠ Base Current IB -30 Ὠ Collector Power Dissipation PC 100 Ὥ Junction Temperature Tj 150 ᴱ Storage Temperature Range Tstg -55~150 ᴱ DIODE D1 CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 Ὠ Average Forward Current IO 100 Ὠ Surge Current (10mS) IFSM 2 A Power Dissipation PD - Ὥ Junction Temperature Tj 150 ᴱ Storage Temperature Range Tstg -55ᴕ150 ᴱ
- 1. 24 2/2 KTX301E Revision No : 1 Note) hFE Classification Y(4):120~240, GR:200~400. ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 ὧ Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 ὧ DC Current Gain hFE (Note) VCE=-6V, IC=-2Ὠ 120 - 400 Collector-Emitter Saturation Voltage VCE(SAT) IC=-100Ὠ, IB=-10Ὠ - -0.1 -0.3 V Transition Frequency fT VCE=-10V, IC=-1Ὠ 80 - - ὲ Collector Output Capacitance Cob VCB=-10V, IE=0, f=1ὲ - 4 7 ὸ Noise Figure NF VCE=-6V, IC=-0.1Ὠ, f=1ά, Rg=10ὶ - 1.0 10 dB CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) IF=1mA - 0.60 - VVF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 Reverse Current IR VR=80V - - 0.5 ὧ Total Capacitance CT VR=0, f=1ὲ - 0.9 3.0 ὸ Reverse Recovery Time trr IF=10Ὠ - 1.6 4.0 TRANSISTOR Q1 DIODE D1