KTS3C3F30L KEXIN | Alldatasheet
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Typical RDS(on) (N-Channel)=50m Typical RDS(on) (N-Channel)=140m Standard outline for easy automated surface mount assembly Low threshold drive Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage (VGS =0 ) V DS Drain-gate Voltage (RGS =2 0k ) VDGR Gate-to-Source Voltage V GS V Continuous Drain Current, at Tc =2 5 ID 3.5 2.7 Continuous Drain Current, at Tc =1 0 0 ID 2.2 1.7 Pulsed Drain Current I DM 14 11 Total Dissipation at TC =2 5 Single Operation Total Dissipation at TC =2 5 Dual Operation Junction and Storage Temperature Range T J,T STG Thermal Resistance Junction-ambient Max (Single Operating) (Dual Operating) Maximum Lead Temperature For Soldering Purpose T l * Mounted on 0.5 in2 pad of 2oz. copper. Rthj-amb * -65 to 150 62.5 PTOT 1.6 300 W V A
www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit ID =2 5 0 A, VGS =0 N-Ch 30 V ID =2 5 0 A, VGS =0 P-Ch 30 V N-Ch 1 A VDS = Max Rating P-Ch 1 A VDS = Max Rating, TC =1 2 5 N-Ch 10 A P-Ch 10 A N-Ch 10 A P-Ch 10 A VDS =V GS,I D =2 5 0 A N-Ch 1 V VDS =V GS,I D =2 5 0 A P-Ch 1 V VGS =1 0 V ,ID = 1.75A N-Ch 50 65 m VGS =1 0 V ,ID = 1.5A P-Ch 140 165 m VGS =4 . 5 V ,ID = 1.75A N-Ch 60 90 m VGS =4 . 5 V ,ID = 1.5A P-Ch 160 200 m VDS =1 5VI D=1 . 7 5A N - C h 5 . 5 S VDS =1 5VI D=1 . 5A P - C h 4 S N-Ch 320 pF N-Channel P-Ch 420 pF V DS =2 5 V ,f=1M H z ,VGS =0 N - C h 9 0 p F P-Channel P-Ch 95 pF V DS =2 5 V ,f=1M H z ,VGS =0 N - C h 4 0 p F P-Ch 30 pF N-Channel N-Ch 27 ns VDD=15V,ID=1.75A,RG=4.7 ,V GS = 4.5V P-Ch 14.5 ns P-Channel N-Ch 40 ns VDD=15V,ID=1.5A,RG=4.7 , VGS=4.5V P-Ch 37 ns N-Channel N-Ch 8.5 12 nC VDD =24V, ID=3.5A,VGS = 4.5V P-Ch 4.8 7 nC N-Ch 2 nC P-Channel P-Ch 1.7 nC V DD =2 4 V ,ID=3 A , VGS =4 . 5 V N - C h 4 n C P-Ch 2 nC N-Channel N-Ch 30 ns VDD =1 5 V ,ID = 1.75A,RG =4 . 7 , VGS =4 . 5 V P-Ch 90 ns P-Channel N-Ch 20 ns VDD =1 5 V ,ID =1 . 5 A , RG =4 . 7 , VGS =4 . 5 V P-Ch 23 ns N-Ch 3.5 A P-Ch 3 A N-Ch 14 A P-Ch 12 A td(off) Total Gate Charge QgsGate-Source Charge Gate-Drain Charge Q gd Qg Turn-off Delay Time tf Testconditons ISDSource-drain Current ISDMSource-drain Current (pulsed) *1 Output Capacitance C oss Reverse Transfer Capacitance C rss Fall Time Input Capacitance IGSSGate-body Leakage Current (VDS =0 ) VGS(th)Gate Threshold Voltage V(BR)DSSDrain-source Breakdown Voltage IDSSZero Gate Voltage Drain Current (VGS =0 ) VGS = 16V td(on)Turn-on Delay Time trRise Time RDS(on)Static Drain-source On Resistance Forward Transconductance g fs Ciss KTS3C3F30L
www.kexin.com.cn 3 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit ISD =3 . 5 A ,VGS = 0 N-Ch 1.2 V ISD =3 A ,VGS =0 P - C h 1 . 2 V N-Channel N-Ch 28 ns ISD =3 . 5 A ,di/dt = 100A/ s, P-Ch 35 ns VDD = 15V, Tj = 150 N-Ch 18 nC P-Channel P-Ch 25 nC ISD =3 A ,di/dt = 100A/ s, N-Ch 1.3 A VDD = 15V, Tj = 150 P-Ch 1.5 A *1 Pulsed: Pulse duration = 300s, duty cycle 1.5 %. *2 Pulse width limited by safe operating area Reverse Recovery Curren trrReverse Recovery Time QrrReverse Recovery Charge IRRM VSDForward On Voltage *2 Testconditons KTS3C3F30L