KTS2001 KEXIN | Alldatasheet
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Features
Low ON resistance. 2.5V drive. Mount height 1.1mm. TSSOP-8 Unit: mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage V DSS 20 V Gate-to-Source Voltage V GSS 10 V Drain Current(DC) I D 5A Drain Current(pulse) *1 I DP 30 A Allowable Power Dissipation *2 P D 1.5 W Channel Temperature T ch 150 Storage Temperature T stg - 5 5t o+ 1 5 0 *1 PW 10 s, duty cycle 1% *2 Mounted on a ceramic board (1000mm2X0.8mm) 1,5,8: Drain 2,3,6,7: Source 4: Gate
www.kexin.com.cn2 SMD Type ICSMD Type IC KTS2001 Switching Time Test Circuit Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-to Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0 20 V Zero Gate Voltage Drain Current I DSS VDS =2 0V ,VGS = 0 V 100 A Gate-to-Source Leakage Current I GSS VGS = 8V ,VDS =0V 10 A Cutoff Voltage V GS(off) VDS =1 0V ,ID =1m A 0 . 4 1 . 3 V Forward Transfer Admittance Yfs VDS =1 0V ,ID =5A 9 1 5 S RDS(on)1 VGS =4V ,I D =5A 2 3 3 0 m RDS(on)2 VGS =2 . 5V ,ID =2A 3 2 4 6 m Input Capacitance C iss VDS = 10 V 750 pF Output Capacitance C oss VGS = 0 V 520 pF Reverse Transfer Capacitance C rss f = 1 MHz 300 pF Turn-on Delay Time t d(on) 20 ns Rise Time t r See Specified Test Circuit 200 ns Turn-off Delay Time t d(off) 150 ns Fall Time t f 150 ns Total Gate Charge Q g VDS= 10 V 30 nC Gate-to-Source "Miller" Charge Q gs VGS =1 0V 5 n C Gate-Drain Charge Q gd ID =5A 7 n C Diode Forward Voltage V SD IF =5A ,V GS =0V 1 . 0 1 . 2 V Drain to Source On-state Resistance