KTS1C1S250 KEXIN | Alldatasheet

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Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage (VGS =0 ) V DS 250 250 Drain-gate Voltage (RGS =2 0k ) VDGR 250 250 Gate-to-Source Voltage V GS V Continuous Drain Current, @ Tc =2 5 ID 0.75 0.60 Continuous Drain Current, @ Tc = 100 ID 0.47 0.38 Pulsed Drain Current I DM 32 . 4 Total Dissipation at TC =2 5 Single Operation Total Dissipation at TC =2 5 Dual Operation Junction and Storage Temperature Range T J,T STG Thermal Resistance Junction-ambient Max (Single Operating) (Dual Operating) * Mounted on 0.5 in² pad of 2oz. copper. Rthj-amb * - 6 5t o1 5 0 62.5 PTOT 1.6 W V A

www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit ID =2 5 0 A, VGS =0 N-Ch 250 V ID =2 5 0 A, VGS =0 P-Ch 250 V N-Ch 1 A VDS = Max Rating P-Ch 1 A VDS = Max Rating, TC =1 2 5 N-Ch 10 A P-Ch 10 A N-Ch 10 A P-Ch 10 A VDS =V GS,I D =2 5 0 A N-Ch 2 3 4 V VDS =V GS,I D =2 5 0 A P-Ch 2 3 4 V VGS =1 0 V ,ID = 0.40A N-Ch 0.9 1.4 VGS =1 0 V ,ID = 0.30A P-Ch 2.1 2.8 N-Ch 325 pF N-Channel P-Ch 260 pF V DS =2 5 V ,f=1M H z ,VGS =0 N - C h 5 1 p F P-Channel P-Ch 52 pF V DS =2 5 V ,f=1M H z ,VGS =0 N - C h 2 4 p F P-Ch 25.5 pF N-Ch 6 P-Ch 6 N-Channel N-Ch 9 ns VDD=125V,ID=1.5A,RG=4.7 ,V GS = 10V P-Ch 12 ns P-Channel N-Ch 11 ns VDD=125V,ID=1.5A,RG=4.7 , VGS=10V P-Ch 22 ns N-Channel N-Ch 15 20 nC VDD =200V, ID=1.5A,VGS = 10V P-Ch 16 21 nC N-Ch 1.9 nC P-Channel P-Ch 1.4 nC V DD =2 0 0 V ,ID=1 . 5 A , VGS =1 0 V N - C h 7 n C P-Ch 7.6 nC N-Channel N-Ch 31 ns VDD =1 2 5 V ,ID =1 . 5 A , RG =4 . 7 , VGS =1 0 V P-Ch 29.5 ns P-Channel N-Ch 11 ns VDD =2 0 0 V ,ID =1 . 5 A , RG =4 . 7 , VGS =1 0 V P-Ch 7 ns N-Ch 0.75 A P-Ch 0.6 A N-Ch 3 A P-Ch 2.4 A Fall Time td(off) Total Gate Charge QgsGate-Source Charge Gate-Drain Charge Q gd Qg Turn-off Delay Time tf Testconditons ISDSource-drain Current ISDMSource-drain Current (pulsed) *1 Output Capacitance C oss Reverse Transfer Capacitance C rss Gate Input Resistance V(BR)DSSDrain-source Breakdown Voltage RDS(on)Static Drain-source On Resistance IDSSZero Gate Voltage Drain Current (VGS =0 ) IGSSGate-body Leakage Current (VDS =0 ) VGS(th)Gate Threshold Voltage VGS = 20V td(on)Turn-on Delay Time trRise Time CissInput Capacitance Rg f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain KTS1C1S250

www.kexin.com.cn 3 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit ISD =3 A ,VGS =0 N - C h 1 . 5 V ISD =3 A ,VGS =0 P - C h 1 . 5 V N-Channel N-Ch 127 ns ISD =0 . 8 A ,di/dt =1 0 0 A /s, P-Ch 143 ns VDD =5 0 V ,Tj =1 5 0 N-Ch 450 nC P-Channel P-Ch 806 nC ISD = 0.60A, di/dt =1 0 0 A /s, N-Ch 7 A VDD =4 0 V ,Tj =1 5 0 P-Ch 11 A Gate-Source Breakdown Voltage B VGSO Igs= 500 A (Open Drain) 25 V *1 Pulsed: Pulse duration = 300s, duty cycle 1.5 %. *2 Pulse width limited by safe operating area Reverse Recovery Curren trrReverse Recovery Time QrrReverse Recovery Charge IRRM VSDF o r w a r dO nV o l t a g e* 2 Testconditons KTS1C1S250