KTS1012 KEXIN | Alldatasheet
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Features
Low ON resistance. 4.0V drive. Mount height 1.1mm. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage V DSS -30 V Gate-to-Source Voltage V GSS 20 V Drain Current(DC) I D -6 A Drain Current(pulse) *1 I DP -32 A Allowable Power Dissipation *2 P D 1.3 W Channel Temperature T ch 150 Storage Temperature T stg - 5 5t o+ 1 5 0 *1 PW 10 s, duty cycle 1% *2 Mounted on a ceramic board (1000mm2X0.8mm)
www.kexin.com.cn2 SMD Type ICSMD Type IC KTS1012 Marking Marking S1012 Switching Time Test Circuit Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-to Source Breakdown Voltage V (BR)DSS ID=-1mA, VGS=0 -30 V Zero Gate Voltage Drain Current I DSS VDS =- 3 0V ,VGS =0V - 1 A Gate-to-Source Leakage Current I GSS VGS = 16 V, VDS =0V 10 A Cutoff Voltage V GS(off) VDS =- 1 0V ,ID =- 1m A - 2 . 4 V Forward Transfer Admittance Yfs VDS =- 1 0V ,ID =- 6A 8 . 7 1 2 S RDS(on)1 VGS =- 1 0V ,ID = -6 A 21 28 m RDS(on)2 VGS =- 4 . 5V ,ID = -4 A 33 47 m RDS(on)3 VGS =- 4V ,ID = -4 A 37 52 m Input Capacitance C iss 1700 pF Output Capacitance C oss 380 pF Reverse Transfer Capacitance C rss 240 pF Turn-on Delay Time t d(on) 15 ns Rise Time t r See Specified Test Circuit 130 ns Turn-off Delay Time t d(off) 110 ns Fall Time t f 85 ns Total Gate Charge Q g VDS=- 1 0V 3 2 n C Gate-to-Source "Miller" Charge Q gs VGS =- 1 0V 4 . 5 n C Gate-Drain Charge Q gd ID =- 6A 5 n C Diode Forward Voltage V SD Is =- 6A ,VGS = 0 V -0.79 -1.5 V D r a i nt oS o u r c eO n - s t a t eR e s i s t a n c e VDS =- 1 0V , f=1M H z