KTN2222_03 KEC | Alldatasheet

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  1. 6. 16 1/5 SEMICONDUCTOR TECHNICAL DATA KTN2222/A EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 2 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.

FEATURES

: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907/2907A. KTN2222/2222A Electrically Similar to 2N2222/2222A. TO-92 DIM MILLIMETERS A B C D F G H J K L

4.70 MAX

4.80 MAX

3.70 MAX

0.45 1.00 1.27 0.85 0.45 14.00 0.50

0.55 MAX

2.30 D 1 2 3 B AJ K G H F F L E C E C M N

0.45 MAXM

1.00N 1. EMITTER 3. COLLECTOR 2. BASE MAXIMUM RATING (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT KTN2222 KTN2222A Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 30 40 V Emitter-Base Voltage VEBO 5 6 V Collector Current IC 600 mA Collector Power Dissipation (Ta=25 PC 625 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150

  1. 6. 16 2/5 KTN2222/A Revision No : 2 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current KTN2222A ICEX VCE=60V, VEB(OFF)=3V - - 10 nA Collector Cut-off Current KTN2222 ICBO VCB=50V, IE=0 - - 0.01 A KTN2222A VCB=60V, IE=0 - - 0.01 Emitter Cut-off Current KTN2222A IEBO VEB=3V, IC=0 - - 10 nA Collector-Base Breakdown Voltage KTN2222 V(BR)CBO IC=10 A, IE=0 60 - - V KTN2222A 75 - - Collector-Emitter * Breakdown Voltage KTN2222 V(BR)CEO IE=10mA, IB=0 30 - - V KTN2222A 40 - - Emitter-Base Breakdown Voltage KTN2222 V(BR)EBO IE=10 A, IC=0 5 - - V KTN2222A 6 - - DC Current Gain * KTN2222 KTN2222A hFE(1) IC=0.1mA, VCE=10V 35 - - hFE(2) IC=1mA, VCE=10V 50 - - hFE(3) IC=10mA, VCE=10V 75 - - hFE(4) IC=150mA, VCE=10V 100 - 300 KTN2222 hFE(5) IC=500mA, VCE=10V 30 - - KTN2222A 40 - - Collector-Emitter * Saturation Voltage KTN2222 VCE(sat)1 IC=150mA, IB=15mA - - 0.4 V KTN2222A - - 0.3 KTN2222 VCE(sat)2 IC=500mA, IB=50mA - - 1.6 KTN2222A - - 1 Base-Emitter * Saturation Voltage KTN2222 VBE(sat)1 IC=150mA, IB=15mA - - 1.3 V KTN2222A 0.6 - 1.2 KTN2222 VBE(sat)2 IC=500mA, IB=50mA - - 2.6 KTN2222A - - 2.0 Transition Frequency KTN2222 fT IC=20mA, VCE=20V, f=100MHz 250 - - MHz KTN2222A 300 - - Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF Input Capacitance KTN2222 Cib VEB=0.5V, IC=0, f=1.0MHz - - 30 pF KTN2222A - - 25 ELECTRICAL CHARACTERISTICS (Ta=25 * Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
  1. 6. 16 3/5 KTN2222/A Revision No : 2 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Input Impedance KTN2222A hie IC=1mA, VCE=10V, f=1kHz 2 - 8 k IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25 Voltage Feedback Ratio KTN2222A hre IC=1mA, VCE=10V, f=1kHz - - 8 x10-4 IC=10mA, VCE=10V, f=1kHz - - 4 Small-Singal Current Gain KTN2222A hfe IC=1mA, VCE=10V, f=1kHz 50 - 300 IC=10mA, VCE=10V, f=1kHz 75 - 375 Collector Output Admittance KTN2222A hoe IC=1mA, VCE=10V, f=1kHz 5 - 35 IC=10mA, VCE=10V, f=1kHz 25 - 200 Collector-Base Time Constant KTN2222A Cc rbb' IE=20mA, VCB=20V, f=31.8MHz - - 150 pS Noise Figure KTN2222A NF IC=100 A, VCE=10V, Rg=1k , f=1kHz - - 4 dB Switching Time Delay Time td VCC=30V, VBE(OFF)=0.5V IC=150mA, IB1=15mA - - 10 nS Rise Time tr - - 25 Storage Time tstg VCC=30V, IC=150mA IB1=-IB2=15mA - - 225 Fall Time tf - - 60 ELECTRICAL CHARACTERISTICS (Ta=25
  1. 6. 16 4/5 KTN2222/A Revision No : 2 CCOLLECTOR CURRENT I (mA) DC CURRENT GAIN hFE 10.5 COLLECTOR CURRENT I (mA)C COLLECTOR-EMITTER VOLTAGE V (V)CE CECI - V h - I TRANSITION FREQUENCY f (MHz) COLLECTOR CURRENT I (mA)C T f - I 0.4 0.8 1.2 1.6 200 400 600 800 FE C 100 300 500 1K V =10VCE TC 100 -10 -100 -1k -3 k Ta=25 C V =10V 1000 CE COMMON EMITTER Ta=25 C 1.8 1000 I =2mAB 3 10 30 100 300 1K Ta=-25 C Ta=25 C Ta=75 C 1000.5 1 0.6 0.4 0.2 COLLECTOR-EMITTER SATURATION CE(sat) 1033 0 V - ICE(sat) C 1k300 I /I =10C VOLTAGE V (V) COLLECTOR CURRENT I (mA)C V CE(sat) COMMON EMITTER B BASE-EMITTER SATURATION VOLTAGE V (V) COLLECTOR CURRENT I (mA) 0.2 0.5 BE(sat) 10 30 100 C 1k300 0.4 I /I =10 COMMON EMITTER V - IBE(sat) C B C 0.6 0.8 1.0 1.2 1.4 1.6 VBE(sat) Ta=-25 C Ta=25 C Ta=75 C COLLECTOR CURRENT I (mA) 0.2 0.05 BASE-EMITTER VOLTAGE V (V)BE C 0.3 0.4 0.5 0.6 0.1 0.3 100 300 500 0.7 0.8 0.9 1.0 I - VCB E Ta=75 C Ta =25 C Ta=-25 C COMMON EMITTER V =10VCE 6mA 4mA 8mA 10mA 12mA 14mA 16mA 18mA 20mA V =1VCE V =2VCE Ta=25 C 300 -3 -30 -300
  1. 6. 16 5/5 KTN2222/A Revision No : 2 COLLECTOR OUTPUT CAPACITANCE Cob (pF)COLLECTOR-BASE VOLTAGE V (V)CB Cob - VCB 1.0 -0.1 -1.0 -10 -100 -300 COMMON EMITTER Ta=25 C 100 EMITTER-BASE VOLTAGE V (V)EB COLLECTOR INPUT CAPACITANCE Cib (pF) 3.0 Cib Cob f=1MHz, EBCib - V COLLECTOR POWER DISSIPATION0 C AMBIENT TEMPERATURE Ta ( C) Pc - Ta P (mW) 25 50 75 100 125 150 175 100 200 300 400 500 600 700