KTJ6131E KEC | Alldatasheet

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  1. 6. 23 1/3 SEMICONDUCTOR TECHNICAL DATA KTJ6131E Revision No : 0 ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS

FEATURES

2.5 Gate Drive. Low Threshold Voltage : Vth=-0.5 -1.5V. High Speed. Small Package. Enhancement-Mode. MAXIMUM RATING (Ta=25 DIM MILLIMETERS A B D E ESM 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 C G H J 1 3 E B D A G H C J 1. SOURCE 2. GATE 3. DRAIN ELECTRICAL CHARACTERISTICS (Ta=25 Marking E B Type Name P CHANNEL MOS FIELD EFFECT TRANSISTOR D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. EQUIVALENT CIRCUIT CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Gate Leakage Current IGSS VGS= 16V, VDS=0V - - A Drain-Source Breakdown Voltage V(BR)DSS ID=-100 A, VGS=0V -30 - - V Drain Cut-off Current IDSS VDS=-30V, VGS=0V - - -1 A Gate Threshold Voltage Vth VDS=-3V, ID=-0.1mA -0.5 - -1.5 V Forward Transfer Admittance |Yfs| VDS=-3V, ID=-10mA 15 - - mS Drain-Source ON Resistance RDS(ON) ID=-10mA, VGS=-2.5V - 20 40 Input Capacitance Ciss VDS=-3V, VGS=0V, f=1MHz - 10.4 - pF Reverse Transfer Capacitance Crss VDS=-3V, VGS=0V, f=1MHz - 2.8 - pF Output Capacitance Coss VDS=-3V, VGS=0V, f=1MHz - 8.4 - pF Switching Time Turn-on Time ton VDD=-3V, ID=-10mA, VGS=0 -2.5V - 0.15 - S Turn-off Time toff - 0.13 - S CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDS -30 V Gate-Source Voltage VGSS 20 V DC Drain Current ID -50 mA Drain Power Dissipation PD 100 mW Channel Temperature Tch 150 Storage Temperature Range Tstg -55 150

  1. 6. 23 2/3 KTJ6131E Revision No : 0 DRAIN-SOURCE VOLTAGE V (V) DRAIN CURRENT I (mA)D DS I - VDD S DRAIN CURRENT I (mA) FORWARD TRANSFER ADMITTANCE D Y - I GATE-SOURCE VOLTAGE V (V) DRAIN CURRENT I (mA)D DS (LOW VOLTAGE REGION) COMMON SOURCE Ta=25 C V =-1.2VGS fs D fsY (mS) COMMON SOURCE V =-3VDS COMMON SOURCE V =-3VDS -10-2 -4 -6 -8 -10 -20 -30 -40 -50 -1.4V -1.6V -1.8V -2.0V -2.2V -2.4V-2.5V I - V DSD DRAIN CURRENT I (mA) GATE-SOURCE VOTAGE V (V)GS D I - VDG S Ta=25 C CAPACITANCE C (pF) DRAIN-SOURCE VOLTAGE V (V)DS C - VDS COMMON SOURCE Ta=25 C V =-0.9VGS -0.2 -0.4 -0.6 -0.8 -1.0 -1.0V -1.05V -1.1V -1.15V -1.2V -1.3V-2.5V V =0 f=1MHz Ta=25 C GS COMMON SOURCE Ciss Coss rssC -0.01 0 -1 -2 -3 -4 -5 -0.1 -10 -50 -0.03 -0.3 -30 -0.01 -0.1 -10 -50 -0.03 -0.3 -30 0.5 100 DRDRAIN REVERSE CURRENT I (mA) DRAIN-SOURCE VOTAGE V (V)DS DSDRI - V COMMON SOURCE V =0GS Ta=100 C I S D G DR Ta=-25 C Ta=25 C
  1. 6. 23 3/3 KTJ6131E Revision No : 0 P - TaD AMBIENT TEMPERATURE Ta ( C) 02 0 4 0 D DRAIN POWER DISSIPATION P (mW)60 80 100 120 140 160 100 150 200 250 300 350 Ta=25 C OUT(Z =50Ω ) rV :t , t < 5ns D.U. 1% V =-3V COMMON SOURCE 10µs -2.5V DD L V 50Ω INV R V OUT IN DD f VIN -2.5V 90% DDV OUTV INV 10% 10% 90%DSV (ON) ont offt ftrt SWITCHING TIME TEST CIRCUIT V - I DDRAIN CURRENT I (mA) -1 -3 -10 -100 DRAIN-SOURCE ON VOLTAGE DS(ON) D -30-5 COMMON SOURCE Ta=25 C GSV =-2.5V -1K -500 -100 -50 -30 -10 -3K -300 -50 DS(ON) V (mV) SWITCHING TIME t (ns) -3-1-0.3 DRAIN CURRENT I (mA)D Dt - I -10 -30 -50 COMMON SOURCE V =-3VDD 100 300 500 D.U. 1%<= V :t , t < 5nsIN rf (Z =50Ω )OUT Ta=25 C V -2.5V 10µs V R OUT VIN L 50Ω DD t on rt offt ft