KTHC5513 KEXIN | Alldatasheet

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Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS(on) in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin Environments Such as Portable Electronics Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-source voltage V DSS V Gate-source voltage V GSS V Drain current Continuous *1 TA =2 5 2.9 -2.2 TA =8 5 2.1 -1.6 t 5 3.9 -3 Drain current Pulsed t = 10s* 1 IDM 12 -9 A Total power dissipation W t 5 W Operating and Storage Temperature Range T J,T stg Lead Temperature for Soldering Purposes T L Junction-to-Ambient *1 Steady State t 5 *1 Surface Mounted on FR4 board using 1 in sq pad size 1.1 - 5 5t o1 5 0 AID PD R JA 2.1 260 110

www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit ID=250 A,VGS=0V N-Ch 20 ID=-250 A,VGS=0V P-Ch -20 VDS=16V,VGS=0V 1 VDS=16V,VGS=0V,TJ =8 5 5 VDS=-16V,VGS=0V -1 VDS=-16V,VGS=0V,TJ =8 5 -5 N-Ch 100 P-Ch 100 VDS =V GS,I D = 250 A N-Ch 0.6 1.2 VDS =V GS,I D = -250 A P-Ch -0.6 -1.2 ID=2.9A,VGS=4.5A 0.058 0.08 ID=2.3A,VGS=2.5V 0.077 0.115 ID=2.9A,VDS=10V N-Ch 6.0 ID=-2.2A,VDS=-10V P-Ch 6.0 N-Channel N-Ch 180 V DS=10V,VGS=0V,f=1MHz P-Ch 185 N-Ch 80 P-Channel P-Ch 95 V DS=-10V,VGS=0V,f=1MHz N-Ch 25 P-Ch 30 VGS =4 . 5V ,VDS =1 0V ,ID = 2.9 A N-Ch 2.6 4.0 VGS =-4.5 V, VDS =- 1 0V ,ID =-2.2 A P-Ch 3.0 6.0 VGS =4 . 5V ,VDS =1 0V ,ID = 2.9 A N-Ch 0.6 VGS =-4.5 V, VDS =-10 V, ID =-2.2 A P-Ch 0.5 VGS =4 . 5V ,VDS =1 0V ,ID = 2.9 A N-Ch 0.7 VGS =-4.5 V, VDS =-10 V, ID =-2.2 A P-Ch 0.9 ID=2.9A,VDD=16V N-Ch 5.0 10 ID=-2.2A,VDD=-16V P-Ch 7.0 12 N-Channel N-Ch 9 18 VGS=4.5V,RG=2.5 *2 P-Ch 13 25 N-Ch 10 20 P-Channel P-Ch 33 50 VGS=-4.5V,,RG=2.5 *2 N-Ch 3.0 6.0 P-Ch 27 40 IS=2.6 A,VGS=0V N-Ch 0.8 1.15 IS=-2.1 A,VGS=0 V P-Ch -0.8 -1.15 Forward Voltage *1 V SD S V V V Gate threshold voltage *1 Zero gate voltage drain current IGSS QGDGate?to?Drain "Miller" Charge RDS (on) Static drain-source on-state resistance *1 gFSForward Transconductance td( o n )Turn-on delay time trRise time tfFall time *1 RDS (on) Static drain-source on-state resistance *1 td (off)Turn-off delay time *1 CrssReverse transfer capacitance CissInput capacitance Testconditons N-Ch P-Ch Gate?to?Source Gate Charge Q GS CossOutput capacitance VGS (th) V(BR) DSSDrain-source breakdown voltage ns ns ns ns N-Ch P-Ch AIDSS Gate?to?Source Leakage Current VDS =0V ,V GS = 12 V nA Total Gate Charge Q G(TOT) nC pF pF pF KTHC5513

www.kexin.com.cn 3 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit N-Ch 12.5 N-Channel P-Ch 32 VGS =0V , dIS/dt = 100 A/ s,IS=1.5 A N-Ch 9 P-Ch 10 P-Channel N-Ch 3.5 VGS =0V , dIS/dt = 100 A/ s,IS=?1.5A P-Ch 22 N-Ch 6 P-Ch 15 *1 Pulse Test: Pulse Width 250 s, Duty Cycle 2%. *2 Switching characteristics are independent of operating junction temperature. C tb Reverse Recovery Time QRRReverse Recovery Storage Charge ns trr ta Testconditons KTHC5513