KTH2369 KEC | Alldatasheet
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Technical content
- 6. 17 1/2 SEMICONDUCTOR TECHNICAL DATA KTH2369/A EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 2 HIGH SPEED SWITCHING APPLICATION.
FEATURES
¡¤High Frequency Characteristics : fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA). ¡¤Excellent Switching Characteristics. MAXIMUM RATING (Ta=25¡É) TO-92 DIM MILLIMETERS A B C D F G H J K L
4.70 MAX
4.80 MAX
3.70 MAX
0.45 1.00 1.27 0.85 0.45 14.00 0.50
0.55 MAX
2.30 D 1 2 3 B AJ K G H F F L E C E C M N
0.45 MAXM
1.00N 1. COLLECTOR 2. BASE 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25¡É) Note : *Pulse Test : Pulse Width§Z300¥ìS, Duty Cycle§Z2.0% CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 500 mA Collector Power Dissipation (Ta=25¡É) PC 625 mW Junction Temperature Tj 150 ¡É Storage Temperature Range Tstg -55¡150 ¡É CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.4 ¥ìA VCB=20V, IE=0, Ta=125¡É - - 30 Collector-Base Breakdown Voltage V(BR)CBO IC=10¥ìA, IE=0 40 - - VCollector-Emitter Breakdown Voltage * V(BR)CEO IE=10mA, IB=0 15 - - Emitter-Base Breakdown Voltage V(BR)EBO IE=10¥ìA, IC=0 4.5 - - DC Current * Gain KTH2369/A hFE IC=10mA, VCE=1.0V 40 - 120 KTH2369 IC=10mA, VCE=1.0V, Ta=-55¡É 20 - - KTH2369A IC=10mA, VCE=0.35V, Ta=-55¡É 20 - - KTH2369 IC=100mA, VCE=2.0V 20 - - KTH2369A IC=100mA, VCE=1.0V 20 - - Collector-Emitter Saturation Voltage * VCE(sat) IC=10mA, IB=1.0mA - - 0.25 V Base-Emitter Saturation Voltage * VBE(sat) IC=10mA, IB=1.0mA 0.70 - 0.85 V Transition Frequency fT IC=10mA, VCE=10V, f=100MHz 500 - - MHz Collector Output Capacitance Cob VCB=5.0V, IE=0, f=1.0MHz - - 4.0 pF Storage Time tstg IC=100mA, IB1=-IB2=10mA, VCC=10V - - 13 nSTurn-on Time ton VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=-1.5mA - - 12 Turn-off Time toff IC=10mA, IB1=3.0mA IB2=-1.5mA, VCC=3.0V - - 15
- 6. 17 2/2 KTH2369/A Revision No : 2 COLLECTOR CURRENT I (mA)C BASE-EMITTER VOLTAGE V (V)BE BECI - V COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (mA)C V - ICE(sat) C COLLECTOR CURRENT I (mA) BASE-EMITTER SATURATION C V - I VOLTAGE V (V)BE(sat) BE(sat) C 0.1 0.01 1 CEV =1V 10 100 COLLECTOR CURRENT I (mA)C h - IFE C DC CURRENT GAIN hFE 100 150 200 VOLTAGE V (V)CE(sat) I /I =10 0.3 0.1 0.3 1 3 10 30 Ta=-40 C C B 300100 COMMON EMITTER Ta=-40 C Ta=25 C Ta=125 C Ta=125 C 0.1 0.3 1 3 10 30 300100 COMMON EMITTER I /I =10C B 0.1 0.2 0.3 0.4 0.5 Ta=-40 C Ta=25 C 0.5 0.7 0.9 1.1 1.3 1.5 Ta=25 C Ta=125 C COLLECTOR POWER DISSIPATION C AMBIENT TEMPERATURE Ta ( C) CP - Ta COLLECTOR OUTPUT CAPACITANCE C 50100.1 COLLECTOR-BASE VOLTAGE V (V)CB C - V , C - Vob CB 1.0 3.0 COMMON Cibo f=1MHz P (W) 100 200 300 400 500 600 700 0.3 3 0 1.0 2.0 3.0 4.0 5.0 Ta=25 C oboC EMITTER COLLECTOR INPUT CAPACITANCE C ob(pF) ib(pF) EMITTER-BASE VOLTAGE V (V)EB ib EB 0.1 0.3 COMMON EMITTER V =1VCE Ta=125 C 0.5 Ta=25 C Ta=-40 C 50 75 100 125 150 175