KTD863_15 KEC | Alldatasheet

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  1. 11. 02 1/3 SEMICONDUCTOR TECHNICAL DATA KTD863 TRIPLE DIFFUSED NPN TRANSISTOR Revision No : 2 VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE

FEATURES

hHigh Voltage : VCEO=60V(Min.). hHigh Current : IC(Max.)=1A. hHigh Transition Frequency : fT=150MHz(Typ.). hWide Area of Safe Operation. hComplementary to KTB764. MAXIMUM RATING (Ta=25) DIM MILLIMETERS A B D E G H K L 1. EMITTER 2. COLLECTOR 3. BASE P TO-92L

7.20 MAX

5.20 MAX

2.50 MAX

0.60 MAX

1.27

1.70 MAX

0.55 MAX

14.00 0.50

0.35 MIN

0.75 0.10 F J M O Q 1.25 Φ1.50

0.10 MAX

DEPTH:0.2 123 B A C Q K FF M M NN O H L J D C N G P HH E D H R S 12.50 0.50R 1.00S

1.15 MAX

ELECTRICAL CHARACTERISTICS (Ta=25) Note : hFE(1) Classification O:60q120, Y:100q200, GR:160q320 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current DC IC 1 A Pulse ICP 2 Collector Power Dissipation PC 1 W Junction Temperature Tj 150  Storage Temperature Range Tstg -55q150  CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 1 ǺA Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 1 ǺA DC Current Gain hFE(1) VCE=2V, IC=50mA 60 - 320 hFE(2) VCE=2V, IC=1A 30 - - Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 60 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - 0.15 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA - 0.85 1.2 V Transition Frequency fT VCE=10V, IC=50mA - 150 - MHz Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 12 - pF

  1. 11. 02 2/3 KTD863 Revision No : 2 COLLECTOR OUTPUT CAPACITANCE3 ob 100 COLLECTOR-BASE VOLTAGE V (V)CB C - V DC CURRENT GAIN h FE COLLECTOR CURRENT I (mA)C h - I f - I CCOLLECTOR CURRENT I (mA) 1 3 10 100 TTRANSITION FREQUENCY f (MHz)10 CCOLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V)CE CECI - V COLLECTOR-EMITTER SATURATION CE(sat) 0.01 300100105 COLLECTOR CURRENT I (mA)C V - I 2468 1 0 1 2 200 400 600 800 10mA8mA 6mA 4mA 3mA 2mA 1mA I =0mAB BI =0mA 2mA 4mA 20mA 30mA50mA 800 600 400 200 I - VCC E CECOLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA)C 6mA 10mA FE C 3 10 30 100 300 1k 3k 100 300 500 1k COMMON EMITTER Ta=25 C V =2VCE ob CB C (pF) 3 5 10 30 50 100 COMMON EMITTER f=1MHz Ta=25 C T C 30030 100

300 COMMON EMITTER

Ta=25 C V =10VCE CE(sat) C VOLTAGE V (V) 1k 3k30 0.03 0.05 0.1 0.3 0.5 COMMON EMITTER Ta=25 C I /I =10C B

  1. 11. 02 3/3 KTD863 Revision No : 2 COLLECTOR POWER DISSIPATION0 AMBIENT TEMPERATURE Ta ( C) Pc - TaSAFE OPERATING AREA CECOLLECTOR-EMITTER VOLTAGE V (V) 0.5 1 3 10 0.01 CCOLLECTOR CURRENT I (A) 30 10055 0 0.005 0.03 0.05 0.1 0.3 0.5 I CP CI MAX. DC OPERAT ION 1msec 10msec 100msec 1sec Pc (mW) 20 40 60 80 100 120 140 160 200 400 600 800 1.2k 1PULSE