KTD718 ISC | Alldatasheet
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Technical content
INCHANGESemiconductor iscProductSpecification isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor KTD718
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=120V(Min)
- GoodLinearity ofhFE
- ComplementtoType KTB688
APPLICATIONS
- Audiofrequency poweramplifierapplications
- Recommendfor45-50Waudio frequencyamplifier outputstage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 120 V VCEO Collector-EmitterVoltage 120 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 10 A IB BaseCurrent-Continuous 1 A PC CollectorPowerDissipation @TC=25℃ 80 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor KTD718 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=50mA;IB=0 120 V VCE(sat) Collector-EmitterSaturationVoltage IC=6.0A;IB=0.6A 2.5 V VBE(on) Base-EmitterOnVoltage IC=5A;VCE=5V 1.5 V ICBO CollectorCutoffCurrent VCB=120V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 μA hFE DCCurrentGain IC=1A;VCE=5V 55 160 COB OutputCapacitance IE=0;VCB=10V;ftest=1.0MHz 280 pF fT Current-Gain—BandwidthProduct IC=1A;VCE=5V 10 MHz hFE Classifications R O 55-110 80-160