KTD3055 ISC | Alldatasheet
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor KTD3055
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=120V(Min)
- ComplementtoType KTB2955
APPLICATIONS
- Highpower amplifierapplications
- Recommendedfor30~35W audiofrequencyamplifieroutput stageapplication. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 120 V VCEO Collector-EmitterVoltage 120 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 10 A IB BaseCurrent 1 A PC CollectorPowerDissipation @TC=25℃ 40 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor KTD3055 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=50mA;IB=0 120 V VCE(sat) Collector-EmitterSaturationVoltage IC=5A;IB=0.5A 2.5 V VBE(on) Base-EmitterOnVoltage IC=5A;VCE=5V 1.5 V ICBO CollectorCutoffCurrent VCB=120V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 μA hFE DCCurrentGain IC=1A;VCE=5V 55 160 COB OutputCapacitance IE=0;VCB=10V;ftest=1MHz 170 pF fT CurrentGain-BandwidthProduct IC=1A;VCE=5V 12 MHz hFE Classifications R O 55-110 80-160