KTD2092_07 KEC | Alldatasheet
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Technical content
- 5. 22 1/2 SEMICONDUCTOR TECHNICAL DATA KTD2092 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 3 SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
High hFE : hFE=500 1500 (IC=0.5A). Low Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A). MAXIMUM RATING (Ta=25 DIM MILLIMETERS TO-220IS 0.76+0.09/-0.05 A B C D E F G 0.5+0.1/-0.05H 1.2+0.25/-0.1 1.5+0.25/-0.1 J K L M N P Q R FQ1 2 3 L P N B G JM D N H E R K L S 0.5 Typ S D A C 2.70 0.3+_ 12.0 0.3+_ 13.6 0.5+_ 3.7 0.2+_ Φ3.2 0.2+_ 10.0 0.3+_ 15.0 0.3+_ 3.0 0.3+_ 4.5 0.2+_ 2.54 0.1+_ +2.6 0.2_ 6.8 0.1+_ 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7 V Collector Current DC IC 3 A Pulse ICP 5 Base Current IB 1 A Collector Power Dissipation Ta=25 PC W Tc=25 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 10 A Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 10 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 80 - - V DC Current Gain hFE(1) VCE=1V, IC=0.5A 500 - 1500 hFE(2) VCE=1V, IC=1A 150 - - Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=0.01A - - 0.35 V Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.01A - - 1.2 V Collector-Emitter Forward Voltage VECF IE=3A, IB=0 - - 2.5 V Transition Frequency fT VCE=5V, IC=1A - 140 - MHz Collector Output Capacitance Cob VCE=10V, IE=0, f=1MHz - 30 - pF Switching Time Turn-on Time ton IB1 30ΩB1I CCV =30V IB2 IB2 20µsec I =-I =10mAB1 B2 OUTPUT DUTY CYCLE < 1% INPUT - 0.5 - SStorage Time Tstg - 5.0 - Fall Time tf - 0.7 - BASE COLLECTOR EMITTER EQUIVALENT CIRCUIT
- 5. 22 2/2 KTD2092 Revision No : 3 COLLECTOR CURRENT I (A) C COLLECTOR-EMITTER VOLTAGE V (V)CE CECI - V V =1V COMMON EMITTER 500 300 100 103 CFE DC CURRENT GAIN hFE 10.30.10.05 COLLECTOR CURRENT I (A)C h - I Tc=100 C Tc=25 C Tc=-55 C COMMON EMITTER Ta=25 C TRANSIENT THERMAL RESISTANCE th 0.1 10.10.010.001 PULSE WIDTH t (S)w r - tth w r ( C/W) CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. COMMON EMITTER(SINGLE NONREPETITIVE PULSE) (1) NO HEAT SINK (2) INFINITE HEAT SINK (Tc=25 C) 10 100 100 (1) (2) SINGLE NONREPETIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE I MAX.(PULSED)C CI MAX. (CONTINUOUS) 100 µS1mS 10mS 100mSDC OPERATION Tc=25 C V MAX.CEO 0.5 0.3 0.1 0.05 0.02 COLLECTOR CURRENT I (A)C SAFE OPERATING AREA 200100301031 COLLECTOR-EMITTER VOLTAGE V (V)CE CEV =1V V =2VCE CEV =5V Tc=25 C COMMON EMITTER3k 500 300 100 103 CFE DC CURRENT GAIN hFE 10.30.10.05 COLLECTOR CURRENT I (A)C h - I Tc=-55 C Tc=25 CTc=1 00 C V - I CCOLLECTOR CURRENT I (A) 0.05 0.1 0.3 1 COLLECTOR-EMITTER SATURATION CE(sat) C 31 0 0.02 COMMON EMITTER 2 4 6 8 10 12 14 16 0.4 0.8 1.2 1.6 2.0 2.4 2.8 20 10 4 1.4 0.5 I =0.2mAB V =5VCE CEV =1V V =2VCE 0.05 0.1 0.3 0.5 I /I =100C B CE VOLTAGE V (V)CE(sat)