KTD2061 ISC | Alldatasheet
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor KTD2061
DESCRIPTION
- High Collector-EmitterBreakdown Voltage- :V(BR)CEO=180V(Min)
- LowCollectorSaturationVoltage- :VCE(sat)= 1.0V(Max)@ (IC=0.5A,IB=50mA)
- ComplementtoType KTB1369
APPLICATIONS
- High Voltageapplication
- TV,monitorverticaloutput application
- Driverstageapplication
- ColorTVclassBsoundoutput application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 200 V VCEO Collector-EmitterVoltage 180 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 2 A IB BaseCurrent-Continuous 0.2 A PC CollectorPowerDissipation @TC=25℃ 20 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor KTD2061 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=10mA;IB=0 180 V VCE(sat) Collector-EmitterSaturationVoltage IC=0.5A;IB=50mA 1.0 V VBE(on) Base-EmitterOnVoltage IC=0.5A;VCE=5V 1.0 V ICBO CollectorCutoffCurrent VCB=200V;IE=0 1.0 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 1.0 μA hFE DCCurrentGain IC=0.4A;VCE=10V 70 240 fT Current-Gain—BandwidthProduct IC=0.4A;VCE=10V 100 MHz hFE Classification O Y 70-140 120-240