KTD2060 ISC | Alldatasheet
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor KTD2060
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=80V(Min)
- CollectorPowerDissipation- :PC= 25W@TC=25℃
- LowCollectorSaturationVoltage- :VCE(sat)= 1.5V(Max)@ (IC=3A,IB=0.3A)
- ComplementtoType KTB1368
APPLICATIONS
- Designedforgeneralpurpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 80 V VCEO Collector-EmitterVoltage 80 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 4 A IB BaseCurrent-Continuous 0.4 A PC CollectorPowerDissipation @TC=25℃ 25 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor KTD2060 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=50mA;IB=0 80 V V(BR)EBO Emitter–BaseBreakdownVoltage IE=1mA;IB=0 5 V VCE(sat) Collector-EmitterSaturationVoltage IC=3A;IB=0.3A 1.5 V VBE(on) Base-EmitterOnVoltage IC=3A;VCE=5V 1.5 V ICBO CollectorCutoffCurrent VCB=80V;IE=0 30 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 100 μA hFE-1 DCCurrentGain IC=0.5A;VCE=5V 40 240 hFE-2 DCCurrentGain IC=3A;VCE=5V 15 COB OutputCapacitance IE=0;VCB=10V;ftest=1MHz 90 pF fT Current-Gain—BandwidthProduct IC=0.5A;VCE=5V 8 MHz hFE-1 Classifications R O Y 40-80 70-140 120-240