KTD2059 ISC | Alldatasheet
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor KTD2059
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=100V(Min)
- CollectorPowerDissipation- :PC= 30W@TC=25℃
- LowCollectorSaturationVoltage- :VCE(sat)= 2.0V(Max)@ (IC=4A,IB=0.4A)
- ComplementtoType KTB1367
APPLICATIONS
- Designedforgeneralpurpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 100 V VCEO Collector-EmitterVoltage 100 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 5 A IB BaseCurrent-Continuous 0.5 A PC CollectorPowerDissipation @TC=25℃ 30 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor KTD2059 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=50mA;IB=0 100 V VCE(sat) Collector-EmitterSaturationVoltage IC=4A;IB=0.4A 2.0 V VBE(on) Base-EmitterOnVoltage IC=1A;VCE=5V 1.5 V ICBO CollectorCutoffCurrent VCB=100V;IE=0 100 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 1 mA hFE-1 DCCurrentGain IC=1A;VCE=5V 40 240 hFE-2 DCCurrentGain IC=4A;VCE=5V 20 COB OutputCapacitance IE=0;VCB=10V;ftest=1MHz 100 pF fT Current-Gain—BandwidthProduct IC=1A;VCE=5V 12 MHz hFE-1 Classifications R O Y 40-80 70-140 120-240