KTD2058 SECOS | Alldatasheet
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Technical content
3A, 60V /glyph1197P/glyph1197 Plastic-Encapsulated Transistor 01-Sep-2016 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Low collector saturation voltage: V CE(sat)=1V (Max.) CLASSIFICATION OF h FE Product-Rank Y Range 100-200 ABSOLUTE MAXIMUM RATINGS (T A =25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V CBO 60 V Collector to Emitter Voltage V CEO 60 V Emitter to Base Voltage V EBO 7 V Collector Current IC 3 A Collector Power Dissipation P C 2 W Thermal Resistance from Junction to Ambient RθJA 150 °C Junction and Storage Temperature T J, T STG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 60 - - V I C =0.1mA, I E=0 Collector to Emitter Breakdown Voltage V(BR)CEO 60 - - V I C =50mA, I B =0 Emitter to Base Breakdown Voltage V(BR)EBO 7 - - V I E=0.1mA, I C =0 Collector Cut-Off Current I CBO - - 100 µA V CB =60V, I E=0 Emitter Cut-Off Current I EBO - - 100 µA V EB =7V, I C =0 DC Current Gain h FE 100 - 200 V CE =5V, I C =0.5A Collector to Emitter Saturation Voltage VCE(sat) - - 1 V I C =2A, I B =0.2A Base to Emitter Voltage V BE(on) - - 1 V V CE =5V, I C =0.5A Transition Frequency f T - 3 - MHz VCE =5V, I C =0.5A Collector Output Capacitance Cob - 35 - pF V CB =10V, I E=0, f =1MHz Turn-on Time t on 0.65 Storage Time t stg 1.3 Fall Time t f 0.65 µS TO-220J A 9.57 10.57 I 4.68 5.48 B 3.54 4.14 J 2.95 3.96 C 2.54 2.94 K 4.27 4.87 D 11.86 13.26 L 1.07 1.47 E 0.97 1.57 M 8.0 10.0 F 0.51 1.11 N 2.03 2.92 G 12.7 13.8 Q 0.30 0.65 H 2.540 TYP.
3A, 60V /glyph1197P/glyph1197 Plastic-Encapsulated Transistor 01-Sep-2016 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES