KTD2058 DGNJDZ | Alldatasheet

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FEATURES

  • Low Collector Saturation Voltage : VCE(SAT) = 1. 0V(MAX) MAXIMUM RA TINGS (Ta=25℃ unless other wise noted) Symbol Para meter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 2 W Tj,Tstg Operation Junction and Storage Temperature Range ℃ -55-150 1. B A S E 2. COLLECTOTR 3. EMITTER 1 2 KTD2058 XXXX /g48/g36/g53/g46/g44/g49/g42 KTD2058/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72/g3 XXXX=Code Equivalent Circuit T O-220-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., 1/4Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

CHARACTERISTICS(Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO CI = 100µA, IE= 0 60 V Co llector-emitter breakdown voltage V(B R)CEO CI = 50mA, IB= 0 60 V Emitter-b ase breakdown voltage V( BR)EBO EI = 100µA, IC=0 7 V Co llector cut-off current ICB O CBV = 60V, IE= 0 100 µA Emitter cut-off current IEBO EBV =7 V, IC= 0 100 µA DC cu rrent gain hFE CEV =5 V, IC= 0.5A 60 200 Co llector-emitter saturation voltage VCE (sat) CI =2 A, IB=0.2A 1 V Base-emitter v oltage VBE( on) CEV =5 V, IC=0.5A 1 V T ransition frequency fT CEV =5 V, IC=0 .5A 3 MHz Co llector output capacitance Cob CBV = 10V, IE= 0, f=1MHz 35 pF T urn-on Time ton 0.65 S torage Time tstg 1.3 Sw itching time Fall Time tf 0.65 us CL ASSIFICATION OF h FE Rank O Y Ra nge 60-120 100-200 2/4Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

0.1 1 10 100 1000 10000 100 200 300 400 500 600 700 800 900 1000 1100 1200 100 1000 0 25 50 75 100 125 150 500 1000 1500 2000 2500 3000 10 100 1000 200 400 600 800 1000 1200 10 100 1000 100 125 150 175 200 225 250 275 300 10 100 1000 100 1000 23456789 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 CAPACIT ANCE C (pF) REVERSE VOLTAGE V (V) Cob Cib f=1M Hz IE=0/IC=0 Ta=25℃ VCB/ VEBCob/ Cib — Ta= 100℃ Ta= 25℃ COLLCETOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC VBE COM MON EMITTER VCE=5V CO LLECTOR POWER DISSIPATION PC (mW) AM BIENT TEMPERATURE Ta ( PC — — T a BASE- EMITTER SATURATION VOLTAGE VBEs at (mV) COLLECTOR CURRENT IC (m β=10 Ta=100℃ Ta=25℃ ICVB Esat — COLLECTOR-EMITTER SATURATION VOLTAGE VCE sat (mV) COLLECTOR CURRENT IC (m ICVC Esat — Ta=100℃ Ta=25℃ β=10 3000 30003000 3000 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (m COM MON EMITTER VCE=5V Ta=25℃ Ta=100℃ IChFE — 10m A 9mA A A A mA A A A IB=1mA COLLECTOR CURRENT IC (A) COLLECTOR-EM ITTER VOLTAGE VCE (V) C OMMON EMITTER Ta=25℃ S tatic Characteristic T ypical Characteristics 3/4Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 Φ 3.735 3.935 0.147 0.155 Symbol Dimensions In Millimeters Dimensions In Inches 0.100 TYP2.540 TYP Dongguan Nanjing Electronics Ltd. www.dgnjdz.com