KTD2058 ISC | Alldatasheet
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor KTD2058
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=60V(Min.)
- CollectorPowerDissipation :PC=25W@TC=25℃
- LowCollectorSaturationVoltage- :VCE(sat)= -1.0V(Max)@(IC=-2A,IB=-0.2A)
- ComplementtoType KTB1366
APPLICATIONS
- Designedforlowfrequency power amplifierapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 60 V VCEO Collector-EmitterVoltage 60 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 3 A IB BaseCurrent-Continuous 0.5 A PC CollectorPowerDissipation @Ta=25℃ 2 W CollectorPowerDissipation @TC=25℃ 25 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor KTD2058 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=50mA;IB=0 60 V VCE(sat) Collector-EmitterSaturationVoltage IC=2A;IB=0.2A 1.0 V VBE(on) Base-EmitterOnVoltage IC=0.5A;VCE=5V 1.0 V ICBO CollectorCutoffCurrent VCB=60V;IE=0 100 μA IEBO EmitterCutoffCurrent VEB=7V;IC=0 0.1 mA hFE DCCurrentGain IC=500mA;VCE=5V 60 300 fT Current-Gain—BandwidthProduct IC=0.5A;VCE=5V 3 MHz COB OutputCapacitance IE=0;VCB=10V;ftest=1.0MHz 35 pF Switchingtimes ton Turn-onTime IC=2A,IB1=-IB2=0.2A RL=15Ω;VBB2=30V 0.65 μs tstg StorageTime 1.30 μs tf FallTime 0.65 μs hFE Classifications O Y GR 60-120 100-200 150-300