KTD2005 KEXIN | Alldatasheet
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Technical content
Features
Low ON resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage V DSS 20 V Gate-to-Source Voltage V GSS 10 V Drain Current(DC) I D 1A Drain Current(pulse) *1 I DP 4A Allowable Power Dissipation *2 P D 0.8 W Total Dissipation *2 PT 1.0 W Channel Temperature T ch 150 Storage Temperature T stg -55 to +150 *1 PW 10 s, duty cycle 1% *2 Mounted on a ceramic board (1000mm2X0.8mm) 1:D r a i n 1 2 : Source1 3 : Source1 4:G a t e 1 5:G a t e 2 6 : Source2 7 : Source2 8:D r a i n 2
www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-to Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0 20 V Zero Gate Voltage Drain Current I DSS VDS =2 0V ,VGS =0V 1 0 A Gate-to-Source Leakage Current I GSS VGS = 8V ,VDS =0V 10 A Cutoff Voltage V GS(off) VDS =1 0V ,ID =1m A 0 . 4 1 . 3 V Forward Transfer Admittance Yfs VDS =1 0V ,ID =1A 1 . 8 2 . 6 S RDS(on)1 VGS =1 0V ,ID = 1A 200 260 RDS(on)2 VGS =4V ,I D = 1A 260 360 Input Capacitance C iss 90 pF Output Capacitance C oss 60 pF Reverse Transfer Capacitance C rss 28 pF Turn-on Delay Time t d(on) 10 ns Rise Time t r See Specified Test Circuit 22 ns Turn-off Delay Time t d(off) 20 ns Fall Time t f 19 ns Total Gate Charge Qg 6 nC Gate-to-Source Charge Qgs 1 nC Gate-to-Drain "Miller" Charge Qgd 2 nC Diode Forward Voltage V SD IS=1 A ,VGS =0V 1 . 0 1 . 2 V VDS =10 V,f = 1 MHz mDrain to Source On-state Resistance VDS=10V,VGS=10V,ID=1A KTD2005 Switching Time Test Circuit