KTD1898 WEITRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
SymbolParameter Min Typ Max Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage(Ic=1mA) Collector-Base Breakdown Voltage(Ic=100uA) Emitter-Base Breakdown Voltage(I =100uA) Collector Cutoff Current(V =80V) Emitter Cutoff Current(V =4V) CEO CBO EBO ICBO IEBO KTD1898 Tstg P WEITRON http://www.weitron.com.tw Epitaxial Planar NPN Transistors (Ta=25 ) 100 0.5Collector Power Dissipation I I A(DC) W Junction Temperature, T ,j 150,Storage Temperature -55 to +150 C CP 31. BASE 2. COLLECTOR 3. EMITTER SOT-89 C C Collector Current C VCBO VCEO VEBO A (Pulse)* Vdc Vdc Vdc * Single pulse Pw = 20ms BV BV BV 100 - - V V V uA uA %(Ta=25 unless otherwise noted )C E CB EB
http://www.weitron.com.tw CLASSIFICATION OF h ELECTRICAL CHARACTERISTIC CURVES FE Rank O Y Range Marking ZO ZY 70-140 120-240 GR ZG 200-400 KTD1898 ELECTRICAL CHARACTERISTICS %(Ta=25 unless otherwise noted )C (Countinued) SymbolParameter Min Typ Max Unit Collector-Emitter Saturation Voltage (Ic=500mA, I =20mA) DC Current Gain (V =3V, Ic=500mA) Transition Frequency (V =10V, Ic=50mA, f=100MHz) Output Capacitance (V =10V, I =0A, f=1MHz) FE CE(sat) T Cob f h V 400- 0.4 100 MHz pF V CE B CE CB E 0.1 C OLLE C T OR C UR R E NT : IC (mA) B AS E T O E MIT T E R V OLT AG E : V B E (V ) FIG.1 Grounded Emitter Propagation Characteristics 1000 100 T a=25°C V C E =5V 2 40 8 106 C OLLE C T OR C UR R E NT : IC (A) C OLLE C T OR T O E MIT T E R V OLT AG E : V C E (V ) FIG.2 Grounded Emitter Output Characteristics 1.0 0.8 0.6 0.4 0.2 6mA 5mA 4mA 3mA 2mA 1mA IB =0mA T a=25°C
http://www.weitron.com.tw KTD1898 100 1000 1000 10 1000 DC C UR R E NT G AIN : hF E C OLLE C T OR C UR R E NT : IC (mA) FIG.3 DC Current Gain vs. Collector Current T a=25°C V C E =3V 0.01 0.1 1.0 2.0 0.2 0.02 0.05 0.5 1000 10 1000 C OLLE C T OR S AT UR AT ION V OLT AG E : V C E (sat) (V ) C OLLE C T OR C UR R E NT : IC (mA) FIG.4 Collector-Emitter Ssaturation Voltage vs. Collector Current IC /IB =20/1 T a=25°C 1 2 5 10 20 50 100 200 500 1000 T R ANS IT ION F R E QUE NC Y : fT (MHz) E MIT T E R C UR R E NT : -IE (mA) FIG.5 Gain Bandwidth Product vs. Emitter Current 500 200 100 T a=25°C V C E =5V 0.1 0.2 0.5 1 2 5 10 20 50 100 C OLLE C T OR OUT P UT C AP AC IT ANC E : C ob (pF ) E MIT T E R INP UT C AP AC IT ANC E : C ib (pF ) C OLLE C T OR T O B AS E V OLT AG E : V C B (V ) E MIT T E R T O B AS E V OLT AG E : V E B (V ) FIG.6 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage 100 1000 T a=25°C f=1MHz IE =0A Ic=0A Ic Max (P ulse) T a=25°C S ingle non-repetitive pulsePw=10mS Pw=100mS DC C OLLE C T OR T O E MIT T E R V OLT AG E : V C E (V ) C OLLE C T OR C UR R E NT : IC (A) 0.1 0.2 0.5 1 2 5 10 20 50 100 500200 1000 20m 10m 50m 100m 200m 500m FIG.7 Safe Operating Area
http://www.weitron.com.tw KTD1898 Dim A B C D E G H J K L Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 2.900 Max SOT-89 SOT-89 Outline Dimensions unit:mm B A H E J K G D C L 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 3.100 1.500TYP