KTD1898 SKTECHNOLGY | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
- BASE 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =50µA,I E =0 100 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 80 V Emitter-base breakdown voltage V (BR)EBO I E =50µA,I C =0 5 V Collector cut-off current I CBO V CB =80V,I E =0 1 µA Emitter cut-off current I EBO V EB =4V,I C =0 1 µA DC current gain h FE V CE =3V, I C =500mA 70 400 Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =20mA 0.4 V Transition frequency f T V CE =10V,I C =50mA, f=100MHz 100 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 20 pF CLASSIFICATION OF h FE RANK O Y GR RANGE 70–140 120 –240 200 –400 MARKING Z Symbol Parameter Value Unit V CBO Collector-Base Voltage 100 V V CEO Collector-Emitter Voltage 80 V V EBO Emitter-Base Voltage 5 V I C Collector Current 1 A P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ KTD1898 1 of 3 REV.08
0.1 1 10 100 1000 0 2 04 06 08 0 1 0 0 100 150 200 250 300 1 10 100 1000 100 200 300 400 500 0 25 50 75 100 125 150 100 200 300 400 500 600 0.1 1 10 100 1000 200 400 600 800 1000 0.1 1 10 100 1000 100 200 300 400 0123456 200 400 600 800 f=1MHz I E =0 / I C T a =25 o C REVERSE VOLTAGE V (V) CAPACITANCE C (pF) V CB / V EB C ob / C ib C ib C ob 200 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =10V T a =25 o C I C f T V CE = 3V T a =100 o C T a =25 o C COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE I C h FE COLLECTOR POWER DISSIPATION P c (W) AMBIENT TEMPERATURE T a ( ) P c —— T a COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) T a =25 T a =100 β=25 I C V BEsat T a =25 T a =100 β=25 V CEsat —— I C COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) 4.5mA 4mA 3mA 3.5mA 2.5mA 5mA 2mA COMMON EMITTER T a =25 1.0mA 1.5mA I B =0.5mA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic Typical Characteristics KTD1898 2 of 3 REV.08
A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout KTD1898 3 of 3 REV.08