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WEJ ELECTRONIC CO.,LTD KTD1898 TRANSISTOR (NPN)
FEATURES
P C M : 5 0 0 m W ( T a m b = 2 5 ℃ ) Collector current I C M : 1 A Collector-base voltage V (BR)CBO: 1 0 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=80V, IE=0 1 µA Emitter cut-off current IEBO VEB=4V, IC=0 1 µA DC current gain hFE(1) VCE=3V, IC=500mA 70 400 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=20mA 0.4 V Transition frequency fT V CE=10V, IC=50mA 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF h FE(1) Rank O Y GR Range 70-140 120-240 200-400 Marking ZO ZY ZG SOT-89 1. BASE 2. COLLECTOR 3. EMITTER KTD1898 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. R o HS